• Title/Summary/Keyword: X-RAY SCATTERING

Search Result 448, Processing Time 0.042 seconds

구리배선용 베리어메탈로 쓰이는 Ta-N/Ta/Si(001)박막에 관한 X-선 산란연구 (X-ray Scattering Study of Reactive Sputtered Ta-N/Ta/Si(001)Film as a Barrier Metal for Cu Interconnection)

  • 김상수;강현철;노도영
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
    • /
    • pp.79-83
    • /
    • 2001
  • In order to compare the barrier properties of Ta-N/Si(001) with those of Ta-N/Ta/Si(001), we studied structural properties of films grown by RF magnetron sputtering with various $Ar/N_2$ ratios. To evaluate the barrier properties, the samples were annealed in a vacuum chamber. Ex-situ x-ray scattering measurements were done using an in-house x-ray system. With increasing nitrogen ratio in Ta-N/Si(001), the barrier property of Ta-N/Si(001) was enhanced, finally failed at $750^{\circ}C$ due to the crystallization and silicide formation. Compared with Ta-N/Si(001), Ta-N/Ta/Si(001) forms silicides at $650^{\circ}C$. However it does not crystallize even at $750^{\circ}C$. With increasing nitrogen composition in Ta-N/Ta/Si(001), the formation of tantalum silicide was reduced and the surface roughness was improved. To observe the surface morphology of Ta-N/Ta/Si(001) during annealing, we performed an in-situ x-ray scattering experiment using synchrotron radiation of the 5C2 at Pohang Light Source(PLS). Addition of Ta layer between Ta-N and Si(001) improved the surface morphology and reduced the surface degradation at high temperatures. In addition, increasing $N_2/Ar$ flow ratio reduced the formation of tantalum silicide and enhanced the barrier properties.

  • PDF

절개된 GaAs(110) 면의 XPD 분석 (XPD Analysis on the Cleaved GaAs(110) Surface)

  • 이덕형;정재관;오세정
    • 한국진공학회지
    • /
    • 제2권2호
    • /
    • pp.171-180
    • /
    • 1993
  • X-선 광전자 분광법(XPD)을 이용하여 GaAs(110) 절개면의 결정구조를 이해하였다. 각분해 X-선 분광법으로 GaAs(110) 면의 내각준위 Ga 및 As 3d의 스펙트럼을 얻어, 이 내각 준위의 세기 비율(intensity ratio)의 방위각과 편각에 따른 변화를 SSC(Single Scattering Cluster) 모델에서 얻은 회절패턴으로 곡선분석(fitting)하여 절개면의 재구성 구조(reconstruction geometry)를 얻었다. 이 절개면의 재구성된 값은 다른 실험의 결과와 비슷하였다.

  • PDF

Current Status of the Synchrotron Small-Angle X-ray Scattering Station BL4C1 at the Pohang Accelerator Laboratory

  • Jorg Bolze;Kim, Jehan;Huang, Jung-Yun;Seungyu Rah;Youn, Hwa-Shik;Lee, Byeongdu;Shin, Tae-Joo;Moonhor Ree
    • Macromolecular Research
    • /
    • 제10권1호
    • /
    • pp.2-12
    • /
    • 2002
  • The small-angle X-ray scattering (SAXS) beamline BL4C1 at the 2.5 GeV storage ring of the Pohang Accelerator Laboratory (PAL) has been in its first you of operation since August 2000. During this first stage it could meet the basic requirements of the rapidly growing domestic SAXS user community, which has been carrying out measurements mainly on various polymer systems. The X-ray source is a bending magnet which produces white radiation with a critical energy of 5.5 keV. A synthetic double multilayer monochromator selects quasi-monochromatic radiation with a bandwidth of ca. 1.5%. This relatively low degree of monochromatization is sufficient for most SAXS measurements and allows a considerably higher flux at the sample as compared to monochromators using single crystals. Higher harmonics from the monochromator are rejected by reflection from a flat mirror, and a slit system is installed for collimation. A charge-coupled device (CCD) system, two one-dimensional photodiode arrays (PDA) and imaging plates (IP) are available its detectors. The overall performance of the beamline optics and of the detector systems has been checked using various standard samples. While the CCD and PDA detectors are well-suited for diffraction measurements, they give unsatisfactory data from weakly scattering samples, due to their high intrinsic noise. By using the IP system smooth scattering curves could be obtained in a wide dynamic range. In the second stage, stating from August 2001, the beamline will be upgraded with additional slits, focusing optics and gas-filled proportional detectors.

THE EFFECT OF SURFACE ROUGHNESS OF CSI(TL) MICRO-COLUMNS ON THE RESOLUTION OF THE X-RAY IMAGE; OPTICAL SIMULATION STUDY

  • Kim, Hyun-Ki;Bae, Jun-Hyung;Cha, Bo-Kyung;Jeon, Ho-Sang;Kim, Jong-Yul;Kim, Chan-Kyu;Cho, Gyu-Seong
    • Journal of Radiation Protection and Research
    • /
    • 제34권1호
    • /
    • pp.25-30
    • /
    • 2009
  • Micro-columnar CsI(Tl) is the most popular scintillator material which is used for many indirect digital X-ray imaging detectors. The light scattering at the surface of micro-columnar CsI(Tl) scintillator was studied to find the correlation between the surface roughness and the resultant image resolution of indirect X-ray imaging detectors. Using a commercially available optical simulation program, Light Tools, MTF (Modulation Transfer Function) curves of the CsI(Tl) film thermally evaporated on glass substrate with different thickness were calculated and compared with the experimental estimation of MTF values by the edge X-ray image method and CCD camera. It was found that the standard deviation value of Gaussian scattering model which is determined by the surface roughness of micro-columns could certainly change the MTF value of image sensors. This model and calculation methodology will be beneficial to estimate the overall performance of indirect X-ray imaging system with CsI(Tl) scintillator film for optimum design depending on its application.

TEM 관련 이론해설 (4): 방사선의 종류와 물질에 의한 산란 (Radiations and Their Scattering by Matter)

  • 이확주
    • Applied Microscopy
    • /
    • 제33권4호
    • /
    • pp.251-259
    • /
    • 2003
  • 물질의 구조 특성파악에 많이 사용되는 X-선과 전자선에 대한 소스 원을 살펴보고 물질과의 반응을 atomic scattering factor의 항으로 설명하였다. 물질과의 회절을 역 격자 공간에서의 Ewald sphere로 설명하고 유한 크기의 소스 파장과 검출기의 효과도 함께 고려하였다.

실시간 X-선 산란을 이용한 p-GaN 위에 Ni/Au 오믹 접촉의 산화과정 연구 (In situ X-ray Scattering Study on the Oxidation of Ni/Au Ohmic Contact on p-GaN)

  • 이성표;장현우;노도영
    • 한국진공학회지
    • /
    • 제14권3호
    • /
    • pp.147-152
    • /
    • 2005
  • 실시간 x-선 산란기법을 이용해 p형 질화물 위에 성장된 $Ni(400\;\AA)/Au(400\;\AA)$ 박막의 공기 중에서 산화과정 동안 일러나는 구조적인 변화를 조사하였다. 350 "C의 열처리 온도에서 산화과정 동안 니켈과 금 박막들이 서로 섞인다는 것을 확인하였고 금의 회절 프로파일의 우측 부근에서 니켈의 양이 서로 다른 금 고용체의 새로운 상이 형성되는 것을 발견하였다. 또한, 이런 금 고용체에 포함된 니켈 원자는 산화가 더욱 진행함으로써 바깥쪽으로 확산하여 산소와 결합하여 NiO의 새로운 상이 형성되는 것을 알 수 있었다. $650^{\circ}C$의 열처리 온도에서는 완전히 산화가 일어났음에도 불구하고 금(111) 벌크 회절 프로파일에 소량의 니켈 원자가 포함되어 있음을 확인하였다.