• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.430-433
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• 2017

This paper presents a S/C/X-band LNA MMIC with resistive feedback structure in 0.25 um GaN HEMT process. The GaN devices have advantages as a high output power device having high breakdown voltage, energy band gap and stability at high temperature. Since the receiver using the GaN device with high linearity can be implemented without a limiter, the noise figure of the receiver can be improved and the size of receiver module can be reduced. The proposed GaN LNA MMIC based on 0.25 um GaN HEMT device is achieved the gain of > 15 dB, the noise figure of < 3 dB, the input return loss of > 13 dB, and the output return loss of > 8 dB in the S/C/X-band. The current consumption of GaN LNA MMIC is 70 mA with the drain voltage 20 V and the gate voltage -3 V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.11
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• pp.1239-1247
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• 2012

In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.

• Journal of Advanced Navigation Technology
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• v.26 no.6
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• pp.487-495
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• 2022

This paper describes the design and development of a high-power transmit receive module(TRM) for mounting on X-band synthetic aperture radar(SAR) of the NEXTSat-2. The TRM generates a high-power pulse signal with a bandwidth of 100 MHz in the target frequency range of X-band and amplifies a low-noise on the received signal. Tx. path of the TRM has output signal level of more than 200 watts (53.01 dB), pulse droop of 0.35 dB, signal strength change of 0.04 dB during transmission signal output, and phase change of 1.7 ˚. Rx. path has noise figure of 3.99 dB and gain of 37.38 ~ 37.46 dB. It was confirmed the TRM satisfies all requirements. The TRM mounted on the NEXTSat-2 flight model(FM) which will be launched using the KSLV-II (Nuri).

• Journal of Advanced Navigation Technology
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• v.28 no.2
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• pp.193-200
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• 2024

This paper describes the design and development of a transmit receiver module(TRM) for mounting on X-band SAR of the NEXTSat-2. The TRM generates the chirp signal with required bandwidth through the DDS in X-band and performs frequency conversion, combination for the signal to transmit and be received and frequency synthesis. Tx path of the TRM produces signals of total 28 bandwidths up to 96.8 MHz and has output signal level of more than + 9.37 dBm. Rx path of the TRM has minimum noise figure of 15.7 dB. The measurement results show that required requirements are satisfied. The TRM is installed on the NEXTSat-2 flight model(FM), launched by KSLV-II(Nuri) on May 23, 2023 and currently operational.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.10
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• pp.1131-1137
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• 2014

In this paper, oscillator with compact hairpin resonator is used to design the local oscillator of X-band radar system. The proposed hairpin resonator is minimized by increasing capacitance of line end of conventional one. By this method, size can be minimized about 40% compared with the conventional resonator and also can improve phase noise characteristic. The result of oscillator using proposed hairpin resonator is measured in oscillating frequency of 9.05 GHz, output power of 2.47 dBm, and phase noise of -101.4 dBc/Hz. The fabricated oscillator in this paper can minimize design and it's planar structure makes it easy to design MMIC.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1047-1054
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• 2013

In this paper, we propose a dual-mode mixer to have multi-band radar signal receiver to be compact. The proposed mixer using a anti-parallel diode is operated as a fundamental mixer or sub-harmonic mixer with respect to a control voltage. A fundamental mixer with a control voltage show a conversion loss of -10 dB, 1dB compression point of 2 dBm at X-band. On the other hand, it is performed as a sub-harmonic mixer with a conversion loss of -10 dB, 1 dB compression point of 2 dBm at K-band.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.48 no.1
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• pp.73-79
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• 2020

Modern radar system requires high spectral purity and low phase noise characteristics for very low RCS target detection and high resolution SAR (Synthetic Aperture Radar) image. This paper presents a new X-band high stable frequency synthesizer for high performance radar system, which combines DAS (Direct Analog Synthesizer) and DDS (Direct Digital Synthesizer) techniques, in order to cope with very low phase noise and high frequency agility requirements. This synthesizer offers more than 10% operating bandwidth in X-band frequency and fast agile time lower than 1 usec. Also, the phase noise at 10kHz offset is lower than -136dBc/Hz, which shows an improvement of more than 10dB compared to the current state of art frequency synthesizer. This architecture can be applied to L-band and C-band application as well. This frequency synthesizer is able to used in modern AESA (Active Electronically Scanned Array) radar system and high resolution SAR application.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.1
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• pp.42-48
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• 2011

In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.1-5
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• 2009

In this paper, low phase noise push-push oscillator (OSC) using the metamaterial resonator for missile defense systems and satellite communication was design and implemented. The metamaterial resonator has the large coupling coefficient value, which makes a high Q value, and has reduced phase noise of OSC. The OSC with 1.8 V power supply has phase noise of -117 dBc/Hz @100 kHz in the 12 GHz. When it has been compared with metamaterial resonator and coventional spiral resonator, the reduced Q value has been -29.7 dB and -47.6 dB respectively. This low phase noise OSC using metamaterial resonator could be available to a OSC in X-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.20-26
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• 2016

This paper presents an X-band two-stage power amplifier using GaN-HEMT. Two-stage structure was adopted to take its high gain and simple inter-stage matching network. Based on a 3D EM simulation, the bond-wire inductance and the parasitic capacitance were predicted. By reducing bond-wire inductance, Q of the matching network is decreased and the bandwidth is improved. The implemented two-stage PA shows a power gain of more than 16 dB, saturated output power of more than 42.5 dBm, and a efficiency of more than 35 % in frequency range of 8.1~8.5 GHz with an operating voltage of 40 V.