• Economic and Environmental Geology
• /
• v.8 no.1
• /
• pp.1-23
• /
• 1975

The subject of this study deals with phase relations between stannite ($Cu_2FeSnS_4$) and sphalerite (${\beta}-ZnS$)/wurtzite (${\alpha}-ZnS$). The phase relations were systematically investigated from liquidus temperature to $400^{\circ}C$ under controlled conditions. ${\beta}-stannite$ (tetragonal) is stable up to $706{\pm}5^{\circ}C$, where it inverts to a high-temperature polymorph ${\alpha}-stannite$ (cubic) melting congruently at $867{\pm}5^{\circ}C$. Sphalerite (cubic, ${\beta}-ZnS$) inverts at $1013{\pm}3^{\circ}C$ to wurtzite, which is the hexagonal hightemperature polymorph of ZnS. Between ${\alpha}-stannite$ and sphalerite a complete solid solution series exists above approximately $870^{\circ}C$ up to solidus temperature. The melting temperature of ${\alpha}-stannite$ rises towards sphalerite and reaches a maximum at $1074{\pm}3^{\circ}C$, which is the peritectic with the composition of 91 wt. % sphalerite and 9 wt. % ${\alpha}-stannite$. At this temperature, wurtzite takes only 5wt. % ${\alpha}-stannite$ in solid solution which decreases with increasing temperature. The inverson temperature of ${\alpha}/{\beta}-stannite$ is lowered with increasing amounts of sphalerite in solid solution down to $614{\pm}7^{\circ}C$, which is the eutectoid with the composition of 13 wt. % sphalerite and 87 wt. % ${\alpha}-stannite$. Here, ${\beta}-stannite$ contains only 10wt. % sphalerite in solid solution. With decreasing temperature, the ranges of the solid solution on both sides of the system narrow. The phase relations in the above pure system changed due to the FeS impurities in the sphalerite solid solution. The eutectoid increased from $614{\pm}7^{\circ}C$ up to $695{\pm}5^{\circ}C$ (5 wt. % FeS) and $700{\pm}5^{\circ}C$ (10wt. % FeS), while the peritectic decreased from $1074{\pm}3^{\circ}C$ down to $1036{\pm}3^{\circ}C$ (wt. %FeS) and $987{\pm}3^{\circ}C$ (10wt. %FeS). A most notable change is the appearance of non-binary regions. An important feature is the combination of this study system with the experimental results reported by Sprinfer (1972). If a stannite-kesterite solid solution is used in the place of stannite as a bulk composition, the inversion temperature is lowered to less than $400^{\circ}C$ which belongs to temperatures of the hydrothermal region.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.1
• /
• pp.26-29
• /
• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.1
• /
• pp.12-15
• /
• 2006

We present the structural, magnetic, and electrical properties in the (Al,Mn)N films with various Mn concentrations grown by plasma-enhanced molecular beam epitaxy. X-ray diffraction analyses reveal that the (Al,Mn)N films have the wurtzite structure without secondary phases. All (Al,Mn)N films showed the ferromagnetic ordering. Particularly, ($Al_{1-x}Mn_{x}$)N film with x = 0.028 exhibited the highest magnetic moment per Mn atom at room temperature. Since all the films exhibit the insulating characteristics, the origin of ferromagnetism in (Al,Mn)N might be attributed to either indirect exchange interaction caused by virtual electron excitations from Mn acceptor level to the valence band within the samples or a percolation of bound magnetic polarons arisen from exchange interaction of localized carriers with magnetic impurities in a low carrier density regime.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.329-329
• /
• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.142-142
• /
• 2009

Zinc Oxide (ZnO)는 wurtzite 결정구조를 가지고 있으며, 밴드갭 에너지가 약 3.4eV인 산화물 반도체 이다. GaN가 도핑된 ZnO 박막을 Pulsed Laser Deposition (PLD) 법을 이용하여 사파이어 기판과 실리콘 기판에 각각 증착하였다. $500^{\circ}C$의 증착온도에서 1at%~10at%까지의 GaN 도핑농도에 따른 ZnO 박막의 결정성, 성분 분석을 비롯한 전기적 특성을 조사하였다. 첨가된 GaN의 농도에 따라 ZnO 박막의 결정성이 변화하였으며, 농도 변화에 상관없이 ZnO(002) 방향으로 성장함을 알 수 있었다. 또한 실리콘 기판에 증착한 GaN-doped ZnO 박막은 5at%에서 $9.3\;{\times}\;10-3{\Omega}cm$, 10at%에서 $9.2\;{\times}\;10-3{\Omega}cm$의 비저항 값을 가지며 각각 p-type 특성을 나타내었다.

• Korean Journal of Materials Research
• /
• v.17 no.1
• /
• pp.1-5
• /
• 2007

GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of $10{\sim}100nm$ were grown on $SiO_2$ substrate. The shape of crystallite above $900^{\circ}C$ had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at $800^{\circ}C$ that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.150-150
• /
• 2003

wide bind gap과 wurtzite hexagonal structure를 가지고 있으며 청색 발광 및 청자색 레이저 특성을 보이는 III-V족 화합물반도체 GaN는 laser diodes (LD) 및 light emitting diodes (LED) 재료로 주목받고있는 주요 전자재료이다. 본 연구에서는 GaN를 chemical vapor deposition (CVD) 법을 이용하여 vapor-liquid-solid (VLS) mechanisum에 의하여 GaN나노와이어 형태로 성장시켰다. 기판은 (001)Si을 사용하였고 suputtering을 이용하여 GaN와 AlN의 double buffer layer (DBL)를 증착시켰으며 촉매로는 Ni을 사용하였다. 또한, 원료로는 고순도 Ga금속과 NH$_3$ gas를, carrier gas로는 Ar을 사용하여 GaN/AlN/(001)Si 위에 GaN 나노와이어를 성장시켰다. 성장된 GaN 나노와이어는 DBL의 두께, Ga source의 양, 튜브 안의 압력, 튜브 안의 위치 등의 제 공정변수에 따라 tangled, straight 등의 다양한 형상을 보였으며 지름은 약 30~100 nm, 길이는 수 $\mu\textrm{m}$로 관찰되었다. GaN나노와이어의 결정성, 형상 및 발광특성 등을 x-ray diffraction (XRD), photoluminesence (PL), scanning electron microscope (SEM), transmision electron microscope (TEM) 등을 이용하여 측정하였으며 제 공정변수와의 상관관계를 규명하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.7
• /
• pp.443-447
• /
• 2014

ZnO crystals with different morphologies were synthesized through a thermal evaporation of Zn-Mn mixtures in air. The morphology was dependant on the Mn content in Zn-Mn mixture. The morphology was changed from rod to tetrapod shape with decreasing Mn content in Zn-Mn mixture. The result indicates that the concentration of Mn might be responsible for the different morphologies of ZnO crystals. XRD spectra showed that the ZnO crystals had a hexagonal wurtzite crystal strutures. For all the samples, room temperature cathodoluminescence spectra showed a ultra-violet emission at 380 nm and a green emission at around 500 nm. However, the intensity ratio of ultra-violet emission to green emission was significantly different with the Mn content in the source material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.2
• /
• pp.110-113
• /
• 2012

ZnO crystals with a baseball bat shape were synthesized without any catalysts through a simple thermal oxidation of ZnS powder in alumina crucible under air atmosphere. SEM images demonstrated that the bat structure was composed of two pieces of ZnO crystals, i.e hexagonal-shaped rod and inverted cone-shaped rod. X-ray diffraction (XRD) pattern revealed that the ZnO crystals had wurtzite hexagonal structure. Energy dispersive X-ray (EDX) spectrum showed that the ZnO was of high purity. A strong green emission peak at 510 nm was observed in cathodoluminescece spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.4
• /
• pp.294-297
• /
• 2013

ZnO crystals with octahedral shape were synthesized by thermal evaporation technique. $ZnF_2$ powder was used as the source material. The thermal evaporation and oxidation of $ZnF_2$ powder was carried out for 1 hr at $1,000^{\circ}C$ in air under atmospheric pressure. SEM images showed that the ZnO crystals produced by oxidizing $ZnF_2$ vapor possessed a characteristic octahedral shape. XRD spectrum revealed that the ZnO octahedron had hexagonal wurtzite structure. In the room temperature photoluminescence spectrum, a strong green emission peak at around 510 nm was observed.