• Title/Summary/Keyword: Wireless LAN topology configuration

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A Study on Wireless LAN Topology Configuration for Enhancing Indoor Location-awareness and Network Performance (실내 위치 인식 및 네트워크 성능 향상을 고려한 무선 랜 토폴로지 구성 방안에 관한 연구)

  • Kim, Taehoon;Tak, Sungwoo
    • Journal of Korea Multimedia Society
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    • v.16 no.4
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    • pp.472-482
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    • 2013
  • This paper proposes a wireless LAN topology configuration method for enhancing indoor location-awareness and improving network performance simultaneously. We first develop four objective functions that yield objective goals significant to the optimal design of a wireless LAN topology in terms of location-awareness accuracy and network performance factors. Then, we develop metaheuristic algorithms such as simulated annealing, tabu search, and genetic algorithm that examine the proposed objective functions and generate a near-optimal solution for a given objective function. Finally, four objective functions and metaheuristic algorithms developed in this paper are exploited to evaluate and measure the performance of the proposed wireless LAN topology configuration method.

Design of MMIC Variable Gain LNA Using Behavioral Model for Wireless LAM Applications (거동모델을 이용한 무선랜용 MMIC 가변이득 저잡음 증폭기 설계)

  • Park, Hun;Yoon, Kyung-Sik;Hwang, In-Gab
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.6A
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    • pp.697-704
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    • 2004
  • This paper describes the design and fabrication of an MMIC variable gain LNA for 5GHz wireless LAN applications, using 0.5${\mu}{\textrm}{m}$ gate length GaAs MESFET transistors. The advantages of high gain and low noise performance of E-MESFETS and excellent linear performance of D-MESFETS are combined as a cascode topology in this design. Behavioral model equations are derived from the MESFET nonlinear current voltage characteristics by using Turlington's asymptote method in a cascode configuration. Using the behavioral model equations, a 4${\times}$50${\mu}{\textrm}{m}$ E-MESFET as a common source amplifier and a 2${\times}$50${\mu}{\textrm}{m}$ D-MESFET as a common gate amplifier are determined for the cascode amplifier. The fabricated variable gain LNA shows a noise figure of 2.4dB, variable gain range of more than 17dB, IIP3 of -4.8dBm at 4.9GHz, and power consumption of 12.8mW.