• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.67-72
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• 1992

In this paper, We prepared the thin film Cu-doped CdS Photovoltaic Cell, varying deposition condition by E-beam process and investigated its properties. After the Cu/CdS films were deposited on transparent ITO glass. We heat-treated to diffuse Cu atoms to CdS fi1m at 350[$^{\circ}C$]. With deposited Cu-doped CdS film. We investigated the electrical. optical. X-ray diffraction and junction property. We studied how to prepare the High conversion efficiency Solar cell window layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.238.1-238.1
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• 2014

이번 연구는 system-on-panel에 적용하기 위한 비휘발성 메모리의 메모리 윈도우 특성 향상에 관한 연구이다. 이를 위해 SiO2/SiNX/SiOXNY의 메모리 구조를 이용하였으며, 채널층으로 투명한 비정질 인듐-주석-아연-산화물을 이용하였다. N형 물질의 특성인 수많은 전자로 인해 erasing의 어려움이 발생하는데 이는 빛과 전압의 동시 인가로 해결하였다. 전하트랩층은 비휘발성 메모리에서 가장 널리 이용되는 질화막을 이용하였으며, SiH4과 NH3의 비율은 8대 1에서 1대 2까지 이용하였다. 이번 연구에서 SiH4과 NH3의 비율이 2대 1일 때 쓰기 전압 +13V와 지우기 전압 -6V에서 약 3.7V의 높은 메모리 윈도우를 얻을 수 있었다.

• Journal of Welding and Joining
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• 제31권3호
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• pp.44-48
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• 2013

Artificial neural network (ANN) model is applied to predict arc welding process window for automotive steel plate. Target weldment was various automotive steel plate combination with lap fillet joint. The accuracy of prediction was evaluated through comparison experimental result to ANN simulation. The effect of ANN variables on the accuracy is investigated such as number of hidden layers, perceptrons and transfer function type. A static back propagation model is established and tested. The result shows comparatively accurate predictability of the suggested ANN model. However, it restricts to use nonlinear transfer function instead of linear type and suggests only one single hidden layer rather than multiple ones to get better accuracy. In addition to this, obvious fact is affirmed again that the more perceptrons guarantee the better accuracy under the precondition that there are enough experimental database to train the neural network.

• 한국표면공학회지
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• 제32권6호
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• pp.703-708
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• 1999

Silicides have been used extensively in ULSI logic device fabrication as contact materials for the active areas as well as the poly- Si gates. NiSi is a promising candidate for submicron device application due to less volume expansion, low formation temperature, little silicon consumption, and large stable processing temperature window. In this report, the microstructure of nickel silicides fabricated with a thermal evaporator has been investigated. We observed systematic transformation of Ni silicides of $Ni_2$Si, NiSi, $NiSi_2$, as annealing temperature increases. All the silicides have been identified by a X-ray diffractometer (XRD). The cross-sectional microstructure of silicides was examined by a transmission electron microscope (TEM) equipped with a energy dispersive spectrometer(EDS). The surface roughness of silicides was measured by scanning probe microscope(SPM). Although we observed thin oxide layer existed at the $Ni/NiSi_{x}$ interface, we fabricated successfully $550\AA$-thick planar Ni-monosilicide at the temperature range of$ 400~700^{\circ}C$.

• Journal of the Optical Society of Korea
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• 제2권1호
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• pp.13-21
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• 1998

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 춘계학술대회 논문집
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• pp.282-285
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• 2009

Selective laser sintering (SLS) is a fast growing process of rapid production fur metallic based parts. To restore damaged mold surface using SLS, single layer experiments of $20{\mu}m$ Fe-Cr powder was performed under various heat input. Process window of $20{\mu}m$ Fe-Cr powder provided feasible process parameters for the smooth regular surface. To estimate coherence between melted powder and basematal, tendency of hardness distribution has been observed. Hardness of melted zone and remelted zone was diversified from 5GPa to 6.5GPa. It is over 2 times compared of hardness of basemetal. Average surface roughness of each direction on surface of melted powder was measured. Experimental results show that the mold restoring process using SLS can be successfully applied in the mold repair industry.

• 한국표면공학회지
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• 제41권1호
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• pp.28-32
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• 2008

In this paper CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, which is a very attractive method for low-cost and large-area solar cells, and the structural, optical and electrical properties of the films was studied. As the thiourea/$CdAc_2$ mole ratio was increased, the deposition rate of CdS films prepared by CBD was increased due to increasing reaction velocity in solution and the optical bandgap was increased at higher thiourea/$CdAc_2$ mole ratio due to larger grain size and continuous microstructure. The minimum resistivity of the films was at thiourea/$CdAc_2$ mole ratio of 3.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 추계학술대회 논문집
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• pp.13-16
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• 2008

The aim of this study is to analyze the daylight performance at Changdeokgung Nakseonjae that is the representative and most well preserved Korean royal palace. As a result of measuring illuminance and luminance, direct sunlight is cut off by the eaves and reflective light from the court comes in the inside of the upper floor. As the layer of window is increased, daylight is decreased and the illuminance distribution is more stable because of decreasing of illuminance change. This study would be used as preliminary data for applying characteristics of lighting environment of Korean royal palace to modern architecture.

• 토지주택연구
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• 제11권3호
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• pp.61-68
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• 2020

Advanced glazing systems with excellent heat transmission values (Ug-Value) have been developed to reduce the energy consumption and the greenhouse gas emission. This study proposes a triple glazing system consisting of gaps with a vacuum and a carbon dioxide gas layer which is one of greenhouse gases. As a fundamental stage, this study is focused on calculating the optimal glazing thickness and the Ug-Value via a computer simulation, Therm & Window package. As the results, it was presented that the optimal thickness of the proposed triple glazing system is 22.2 mm, and the Ug-Value is 0.273 W/㎡·K. If this glazing system is to be applied to buildings, it could not only reduce building energy consumption but could also contribute to the treatment of carbon dioxide gas which is one of greenhouse gases.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 1999년도 추계종합학술대회
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• pp.116-119
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• 1999

This paper presents a feeder waveguide array of slot array antennas for Direct Broadcasting from Satellite(DBS). The feed structure consists of a single waveguide placed on the same layer as radiating waveguide and is characterized by the unit divider, called a $\pi$-Junction. This K-function with an inductive wall splits part of the power into two branch waveguide through one coupling window, and can excite densely arrayed waveguide at equal phase and amplitude. The power dividing characteristics of a cascade of $\pi$ -functions are analyzed by Galerkin's method of moments. From the optimum simulation results based on the feeder waveguide using $\pi$ -Junction at 3.95GHz, we obtained the scattering matrices of the feeder divided power at 11.85CHz.