• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.3
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• pp.34-42
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• 1993

An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

• Bulletin of the Korean Chemical Society
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• v.34 no.8
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• pp.2261-2266
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• 2013

This paper describes the synthesis and water sensing properties of a fluorescent photoinduced electron transfer (PET) sensor (5) with an extended operating sensing range. The 1,8-naphthalimide derivative (5) attached with a piperazine group and a carboxylic group was synthesized and applied as a fluorescent water sensor in water-miscible organic solvents. The fluorescence intensity of the dye 5 increased with increasing water content up to 80% (v/v) and the fluorescence intensities were enhanced 45-, 67- and 122-fold in aqueous EtOH, DMF and DMSO solutions, respectively. In aqueous acetone solution, the enhancement of the fluorescence intensities was somewhat lower (30-fold) but the response range was wider (0-90%, v/v).

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.254-259
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• 2011

In this paper, a current stimulator circuit with adaptive supply regulator for retinal prosthesis is proposed. In current stimulation systems, the stimulating circuits with wide voltage swing range are needed due to the high impedance of the retina cell and microelectrodes. Thus, previous researches adopt the high voltage architecture to obtain the enough operating range. The high voltage architecture, however, could increase the power consumption and can damage the retina cells. The proposed circuit provides the adaptively regulated supply voltage by measuring the difference between desired stimulation current and the actual stimulation current. The proposed circuit can achieve the extended range of the allowable cell impedance, improved accuracy of the stimulation current, and higher biosafety.

• Journal of the Korean Society of Propulsion Engineers
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• v.18 no.2
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• pp.27-34
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• 2014

Buzz margin scheduling and control technique which are suitable to regulate stable and high pressure air in wide range of Mach number are suggested for fixed geometry of a supersonic intake. From the analysis of preceding study, most effective control variable is induced and scheduling law is newly suggested in a real application point of view. The appropriateness of the control law in wide range of Mach number is addressed by numerical simulation of controlled propulsion system. Also, the simulation for stabilization and tracking performances of the controller are studied to investigate the phenomena under flight maneuver and disturbances.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.8
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• pp.1544-1551
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• 2007

A start-up circuit of the bandgap reference voltage generator of cascode current mirror type with wide operating voltage range and enhanced power-up characteristics is proposed in the paper. It is confirmed by simulation that the newly proposed start-up circuit does not affect the operation of the bandgap reference voltage generatory even though the supply voltage(VDDA) is higher and has more stable power-up characteristic than the conventional start-up circuit. Test chips are designed and fabricated with $0.18{\mu}m$ tripple well CMOS process and their test has been completed. The mean value of measured the reference voltage(Vref) is 738mV and The three sigma value($3{\sigma}$) is 29.88mV.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.74-77
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• 2002

In this paper we present a novel temperature compensated Hall effect power IC for accurate operation of wide temperature and high current drive of the motor coil. In order to compensate the temperature dependence of Hall sensitivity with negative temperature coefficient(TC), the differential amplifier has the gain consisted of epi-layer resistor with positive TC. The material of Hall device and epi-resistor is epi-layer with the same mobility. The variation of Hall sensitivity is -38% at 150$^{\circ}C$ and 88% at - 40$^{\circ}C$. But the operating point(B$\sub$op/) and release point(B$\sub$RP/) of the Hall power IC are within ${\pm}$25%. The experimental results show very stable and accurate performance over wide temperature range of -40$^{\circ}C$ to 125$^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.1
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• pp.1-8
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• 2003

The paper proposes instantaneous torque control of IPMSM for maximum torque drive of torque and current plane. The control scheme is based on the mathematical model of the motor and is applicable to the constant torque and field weakening operations. The scheme allows the motor to be driven with maximum torque per ampere(MTPA) characteristic below base speed and it maintains the maximum voltage limit of the motor wide field weakening and the motor current limit under all conditions of operation accurately. For each control mode, a condition that determines the optimal d-axis current $^id$ for maximum torque operation is derived. The proposed control algorithm is applied to IPMSM drive system for drive of wide speed range, the operating characteristics controlled that maximum torque control are examined in detail by simulation.

• Journal of Energy Engineering
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• v.22 no.1
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• pp.58-81
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• 2013

Recently, the technological progress in manufacturing power devices based on wide bandgap materials, for example, silicon carbide(SiC) or gallium nitride(GaN), has resulted in a significant improvement of the operating-voltage range and switching speed and/or specific on resistance compared with silicon power devices. This paper will give an overview of the status on The Next generation Power Devices such as SiC/GaN with a focus on commercialization and research.

• Smart Structures and Systems
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• v.14 no.4
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• pp.541-558
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• 2014

This paper proposes a new design of shape memory alloy (SMA) wire actuated gripper for open mode operation. SMA can generate smooth muscle movements during actuation which make them potentially good contenders in designing grippers. The principle of the shape memory alloy gripper is to convert the linear displacement of the SMA wire actuator into the angular displacement of the gripping jaw. Steady state analysis is performed to design the wire diameter of the bias spring for a known SMA wire. The gripper is designed to open about an angle of $22.5^{\circ}$ when actuated using pulsating electric current from a constant current source. The safe operating power range of the gripper is determined and verified theoretically. Experimental evaluation for the uncontrolled gripper showed a rotation of $19.97^{\circ}$. Forced cooling techniques were employed to speed up the cooling process. The gripper is simple and robust in design (single movable jaw), easy to fabricate, low cost, and exhibits wide handling capabilities like longer object handling time and handling wide sizes of objects with minimum utilization of power since power is required only to grasp and release operations.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.257-261
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• 2001

This paper presents the implementation of wide-band RFIC amplifier operating from near 50MHz to 3GHz using Tachyonics SiGe HBT foundry. Voltage shunt feedback is used for the flat gain and the broad band impedance matching. Initial design parameters are calculated using the low frequency small signal analysis. Since the HBT model was not available at the design time, discrete tuning board was made for fine tuning in the low frequency range. Fabricated amplifier shows 12dB gain with 1dB fluctuation and PldB reaches 15dBm at 850MHz.