• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.403-406
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• 1998

Electroluminescence(EL) come from the light emission obtained by electrical excitation energy passing through a phosphor layer under applied high electrical field. The preparation and characterizations of light emitting ACPEL(alternating-current powder electroluminescent) cell based on two kinds of phosphor mixed ZnS:Mn, Cu and ZnS:Cu phosphor. Basic structure is ITO/Mixed Phosphor/insulator/Al sheet, each layer was mixed by binder, which concentration 11p for phosphor, 8p for insulator. Dielectric properties was investigated first and emission properties of P-LED based on ZnS:Mn,Cu/ZnS:Cu,Br mixture. Emission spectra exhibits two kinds of main peaks at 100V, 1kHz sinusoidal excitation.

• Proceedings of the KSME Conference
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• 2000.11a
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• pp.736-742
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• 2000

Mass removed from crystalline silicon samples during high power single-pulse laser ablation was studied by measuring the resulting crater morphology with a white light interferometric microscope. The volume and depth of the craters show a strong nonlinear change as the laser irradiance increases across a threshold value, that is, approximately $2.2{\times}10^{10}\;W/cm^2$. Time-resolved shadowgraph images of the ablation plume show the ejection of large particulates from the sample for laser irradiance above the threshold, with a time delay of about 300-400 nsec. The thickness of superheated liquid layer near the critical temperature was numerically estimated, considering the transformation of liquid metal into liquid dielectric near the critical state (i.e., induced transparency). The estimated thickness of the superheated layer at a delay time of 200 nsec agreed with the measured crater depths, suggesting that induced transparency promotes the formation of a deep superheated liquid layer which leads to an explosive boiling responsible for the sudden increase of crater volume and depth.

• Journal of the Korean Society for Precision Engineering
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• v.14 no.5
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• pp.53-59
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• 1997

This study has been performed to inmvestigate MRR(metal removal rate), REW(relative electrode wear), surface roughness, heat transumutation layer and microhardness distribution in cross-section of the machined surface with various pulse-on duration and peak pulse current, using the copper and graphite electrode on the heat treated STD11 which is extensively used for metallic molding steel with the EDM. The results obtained are as follows; a) There exists critical pulse-on duration(If Ip equals 5A, .tau. on is 50 .mu. s) which shows the the maximum MRR in accordance with peak oulse current and the MRR decreases when the pulse-on duration exceeds the critical pulse-on during because of the abnormal electric discharge. b) Safe discharge is needed to make maximum of MRR and the metalic organization must be complicated for discharge induction. c) Graphite has much more benefits than copper electrode when rapid machining is done without electrode wear. d) The most external surface has the highest microhardness because of car- burizing from heat analysis of the dielectric fluid and the lower layar of the white covered layer has lower microhar dness than base matal because of softening.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• Composites Research
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• v.27 no.5
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• pp.183-189
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• 2014

Experimental considerations have been performed to obtain the clear optical microscopic images of graphene oxide which are useful to probe its quality and morphological information such as a shape, a size, and a thickness. In this study, we investigated the contrast enhancement of the optical images of graphene oxide after hydrazine vapor reduction on a Si substrate coated with a 300 nm-thick $SiO_2$ dielectric layer. Also, a green-filtered light source gave higher contrast images comparing to optical images under standard white light. Furthermore, it was found that a image channel separation technique can be an alternative to simply identify the morphological information of graphene oxide, where red, green, and blue color values are separated at each pixels of the optical image. The approaches performed in this study can be helpful to set up a simple and easy protocol for the morphological identification of graphene oxide using a conventional optical microscope instead of a scanning electron microscopy or an atomic force microscopy.