• Title/Summary/Keyword: Wheel path density

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Evaluation of Grinding Characteristics in Radial Direction of Silicon Wafer (실리콘 웨이퍼의 반경 방향에 따른 연삭 특성 평가)

  • Kim, Sang-Chul;Lee, Sang-Jik;Jeong, Hae-Do;Lee, Seok-Woo;Choi, Heon-Jong
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.980-986
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    • 2003
  • As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

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Profile Simulation in Mono-crystalline Silicon Wafer Grinding (실리콘 웨이퍼 연삭의 형상 시뮬레이션)

  • Kim Sang Chul;Lee Sang Jik;Jeong Hae Do;Choi Heon Zong;Lee Seok Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.21 no.10
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    • pp.26-33
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    • 2004
  • Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1 st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave pronto because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.

Profile Simulation in Mono-crystalline Silicon Wafer Grinding (실리콘 웨이퍼 연삭의 형상 시뮬레이션)

  • 김상철;이상직;정해도;최헌종;이석우
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.98-101
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    • 2003
  • As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

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