• Environmental Engineering Research
• /
• 제15권2호
• /
• pp.93-98
• /
• 2010

This study aims to determine the chemical composition and seasonal variation of atmospheric acid deposition in order to identify possible sources contributing to precipitation. Sampling and analysis of 132 wet deposition samples were carried out from January to December 2008 at Mae Hia Research Center, Chiang Mai University, Chiang Mai Province. Total precipitation was 1,286.7 mm. Mean electro-conductivity and pH values were 0.94 mS/m and 6.27, respectively. Major cations ($Na^+$, ${NH_4}^+$, $K^+$, $Ca^{2+}$, and $Mg^{2+}$) and major anions ($HCOO^-$, $CH_3COO^-$, $Cl^-$, ${NO_3}^-$, and ${SO_4}^{2-}$) were determined by Ion Chromatography. The relative volume weight mean concentrations of anions, in descending order, were ${SO_4}^{2-}$ > ${NO_3}^-$ > $Cl^-$ > $CH_3COO^-$ > $HCOO^-$ and those of cations were $NH_4^+$ > $Ca^{2+}$ > $Mg^{2+}$ > $K^{+}$ > $Na^+$. Results of a principle component analysis highlighted the influence of various possible sources of ions such as agricultural activity, fuel combustion, marine sources, soil resuspension, and biomass burning.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.190-193
• /
• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 한국대기환경학회지
• /
• 제11권4호
• /
• pp.351-359
• /
• 1995

In order to investigate geochemical behaviors of artificial radionuclide($^{137}$ Cs), the fallout deposition of arificial radioisotope($^{137}$ Cs) was measured from May to October in 1994 at the Korea Ocean Research & Development Institute(KORDI), Ansan, Kyunggido, Korea. And to study radioisotopic behavior and cumulative action in soil, soil samples were collected from Kwang-Leung Forest, Kyunggidom and artificial radioisotope ($^{137}$ Cs) and natural radioisotope($^{210}$ Pb) were identified. The amount of $^{137}$ Cs in atmosphere collected by wet deposition process in May was found to be 4.95 to 11.96mBq m$^{-2}$ whereas the amounts of $^{137}$ Cs by dry deposition process in May and October were found to be 4.0mBq g$^{-1}$ and 3.0mBq g$^{-1}$ , respectively. The amount of $^{137}$ Cs accumulated in soil was measured to be 311mBq cm$^{-2}$ , which contained 83% of the total inputs from atmospheric fallout (374 mBq cm$^{-2}$ ) since 1960s. In addition, the accumulation rate and the annual flux of $^{210}$ Pb into soils were 0.32cm yr$^{-1}$ and 34 mBq cm$^{-2}$ yr$^{-1}$ , respectively. Conclusively, it was found that arificial radioisotopes were mainly from the stratosphere and soil resupension of continental China through the troposphere.

• Journal of Korean Society for Atmospheric Environment
• /
• 제18권E1호
• /
• pp.1-12
• /
• 2002

One technique for determining dry acid deposition fluxes involves measurement of time - averaged ambient concentrations of dry acid deposition species using filter packs (FP) coupled with estimates of mean deposition velocities for the exposure period. A critical problem associated with filter pack data comparisons between various field sampling networks is the use of diverse sampling flow rates and duration protocols. Field experiments were conducted to evaluate the effects of varying sampling flow rates, from 1.5 to 10 standard liters per minute, on total nitrate and sulfate measurements of specific dry acid deposition species . Collocated FP samplers were used to determine sampling and analysis data reproducibility and representativeness . Ambient air samples were simultaneously collected using groups of filter packs operated at various flow rates over identical 7 day periods. The species measured were sulfur dioxide, particulate sulfate , nitric acid and particulate nitrate. Statistical results (ANOVA; alpha level 5%) showed that neither the low nor high sampling flow rates caused a significant difference in the measurements of total sulfate and adjusted total nitrate (ATN) . However, it was concluded that for high flow rate sampling measurements, total nitrate (TN) could be affected during extended sampling durations because of potential nitric acid overloading and breakthrough. Although the previous workers (Costello, 1990; Quillian, 1990) used much higher sampling flow rates (~ 17 sLpm) than employed here, it was assumed that for a high loading (> 50$\mu\textrm{g}$ HNO$_3$) of nitric acid on the Nylon filters, a significant fraction (~10%) of nitric acid could pass through the Nylon filters and be collected on the carbonate impregnated filters. It was concluded that even at the highest sampling flow rate employed (10 sLpm) at the Cary Forest site, nitric acid breakthrough was less than 10% of the total HNO$_3$ collected. However, for a heavily polluted urban airshed or with longer sampling times , higher filter loadings could result in substantial nitric acid breakthrough and HNO$_3$concentrations would be underestimated.

• 한국환경과학회지
• /
• 제7권5호
• /
• pp.717-723
• /
• 1998

The concentrations and wet deposition flux into the sea of heavy metals of precipitation in Pusan area were measured and estimated. The samples were collected by polyethylene bottle(30ι) from January to November in 1996, and heavy metals were analyzed by atomic absorption spectrometer. The concentration order of heavy metals was Al ＞Fe ＞Zn ＞Pb ＞Mn ＞Cu ＞Ni ＞Cd ＞Co, and they were high at inland sites and low at coastal sites. The enrichment factors for some metals(Zn, Cu, Pb, Cd), based on crustal Al, were significantly greater than unity, and the order was Cd ＞ Pb ＞ Zn ＞ Cu. This evidence suggests Cd and Pb are derived predominantly from non-crustal sources. Al, Fe and Mn contents showed good correlation with each other. Therefore this enrichment factor indicates similar geochemical behavior of these elements. The annual wet depositional flux(mg/ $m^2$ /yr) from Pl site was as follows: Al(121.1). Fe,(177.2), Zn(12.9), Mn(6.19), Pb(14.4), Cu(0.64), Ni(1.03), Cd(1.02) and Co(1.01).

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제50권8호
• /
• pp.365-370
• /
• 2001

We have proposed and fabricated a new poly-Si TFT employing air-cavities at the edges of gate oxide in order to reduce the vertical electric field induced near the drain due to low dielectric constant of air. Air-cavity has been successfully fabricated by employing the wet etching of gate oxide and APCVD (Atmospheric pressure chemical vapor deposition) oxide deposition. Our experimental results show that the leakage current of the proposed TFT is considerably reduced by the factor of 10 and threshold voltage shift under high gate bias is also reduced because the carrier injection into gate insulator over the drain depletion region is suppressed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.601-604
• /
• 2006

We have developed ZnO TFT array using conventional photolithography and wet etching processes. Transparent 20 nm of ultra thin ZnO film deposited by means of plasma enhanced atomic layer deposition at $100^{\circ}C$ was used for the active channel. The ZnO TFT has a mobility of $0.59cm^2/V.s$, a threshold voltage of 7.2V, sub-threshold swing of 0.64V/dec., and an on/off ratio of $10^8$.

• 한국세라믹학회지
• /
• 제31권6호
• /
• pp.601-608
• /
• 1994

Aluminum oxide thin films were deposited on p-type(100) silicon substrates by electron cyclotron resonance plasma enhanced CVD(ECR-PECVD) using TMA[Al(CH3)3] and oxygen as reactant gases at 16$0^{\circ}C$ or lower temperatures. The aluminum oxide films deposited by ECR-PECVD have the amorphous structure with the refractive index of 1.62~1.64 and the O/Al ratio of 1.6~1.7. Oxygen flow rate necessary for the stable deposition of the aluminum oxide films increases as the deposition temperature increases. It was found from the OES analysis that the ECR plasma had les cooling effect by introducing the TMA reactant gas in comparison with the RF plasma. The properties of aluminum oxide films prepared by ECR-PECVD were compared with those prepared by RF-PECVD. The ECR-PECVD aluminum oxide films have the higher refractive indices, the lower contents of impurities (H and C) and the stronger wet etch resistance than those deposited by RF-PECVD.

• 한국대기환경학회:학술대회논문집
• /
• 한국대기환경학회 2000년도 추계학술대회 논문집
• /
• pp.145-146
• /
• 2000

도시와 산업의 발달 및 인구증가로 인하여 다양한 종류의 대기오염물질이 대기 중으로 대량 배출되고 있다. 대기 중의 입자상 및 가스상 오염물질들은 강수, 안개 및 응축 등에 의한 습식침착(wet deposition)과 강수의 영향없이 진행되는 중력침강, 확산, 관성충돌 등에 의한 건식침착(dry deposition) 의 과정에 의해 대기 중에서 제거된다(Legge and Krupa, 1990). 일반적으로 습식침착은 구름 내에서 응핵(nuclei)으로 작용하여 오염물질이 제거되는 rain-out 과정과 비 또는 눈 등의 강하시 충돌, 간섭, 흡수 및 흡착과정에 의해 제거되는 세정과정(wash-out)으로 분류될 수 있다. (중략)

• 전자공학회논문지A
• /
• 제33A권4호
• /
• pp.112-120
• /
• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.