• Title/Summary/Keyword: Wet chemical process

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Development of Multi-Chemical Supply System for Semiconductor Wafer Cleaning Station

  • Chung, Myung-Jin;Song, Young-Wook
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.1309-1312
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    • 2005
  • A multi-chemical supply system is developed and applied to a wet station, which uses the multi-chemical process in one bath. To control the concentration of two chemicals, control logic of a supply pump is programmed using the programable logic controller (PLC). By using the multi-chemical supply system, wet station with single bath is applied to cleaning process using multi chemicals such as buffed oxide etchant (BOE) and standard clean 1 (SC-1). The concentration of each chemical is measured in the bath to verify the multi-chemical supply system. The control range in the each chemical concentration is measured to 1.33weight% in NH4OH and 0.23weight% in H2O2. The multi-chemical supply system can be movable and usable as an independent module of fixed wet station. By simply midifying the PLC, a multi-chemical supply system can be developed for a wet station.

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Design of Smart Controller using Intelligent Algorithm for Wet Station (지능형 알고리즘을 이용한 Wet Station용 스마트 제어기 설계)

  • 홍광진;김종원;조현찬;김광선;김두용;조중근
    • Proceedings of the Korean Institute of Intelligent Systems Conference
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    • 2004.10a
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    • pp.67-70
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    • 2004
  • Semiconductor Wet Station has a very important place in semiconductor process. It is important that to discharge chemical with fit concentration and temperature using chemical supply system for clean process. The chemical supply system which is used currently is not only difficult to make a fit mixing rate of chemical which is need in clean' process, but also difficult to make fit concentration and temperature. Moreover, it has high stability but it is inefficient spatially because its volume is great. We propose In-line System to improve system with implement analysis of fluid and thermal transfer on chemical supply system and understand problem of system.

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Reusing the Liquid Fraction Generated from Leaching and Wet Torrefaction of Empty Fruit Bunch

  • Lee, Jae-Won;Choi, Jun-Ho;Im, Hyeon-Soo;Um, Min;Lee, Hyoung-Woo
    • Korean Chemical Engineering Research
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    • v.57 no.3
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    • pp.372-377
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    • 2019
  • Leaching ($60^{\circ}C$, 5 min) and wet torrefaction ($200^{\circ}C$, 5 min) of empty fruit bunch (EFB) were carried out to improve the fuel properties; each liquid fraction was reused for leaching and wet torrefaction, respectively. In the leaching process, potassium was effectively removed because the leaching solution contained 707.5 ppm potassium. Inorganic compounds were accumulated in the leaching solution by increasing the reuse cycle of leaching solution. The major component of the leached biomass did not differ significantly from the raw material (p-value < 0.05). Inorganic compounds in the biomass were more effectively removed by sequential leaching and wet torrefaction (61.1%) than by only the leaching process (50.1%) at the beginning of the liquid fraction reuse. In the sequential leaching and wet torrefaction, the main hydrolysate component was xylose (2.36~4.17 g/L). This implied that hemicellulose was degraded during wet torrefaction. As in the leaching process, potassium was effectively removed and the concentration was accumulated by increasing the reuse cycle of wet torrefaction hydrolysates. There was no significant change in the chemical composition of wet torrefied biomass, which implied that fuel properties of biomass were constantly maintained by the reuse (four times) of the liquid fraction generated from leaching and wet torrefaction.

The Effect of Three-Dimensional Morphology with Wet Chemical Etching in Solar Cells

  • Kim, Hyunyub;Park, Jangho;Kim, Hyunki;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.667-667
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    • 2013
  • Optimizing morphology of the front surface with three dimensional structures (3D) in solar cell is essential element for not only effectivelight harvesting but also carrier collection and separation without the cost burden in process. We designed a three-dimensionally ordered front surface with wet chemical etching. Wet chemical etching is a proper way to have three dimensional structures. The method efficiently transmits the incident light at the front surface to a Si absorber and has competitive price in manufacturing when comparing with reactive ion etching (RIE) to have three dimensional structures. This indicates that optimized front surface with three dimensional structures by wet chemical etching will bring effective light management in solar cells.

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Inverted White OLEDs Fabricated by Full Wet-Processes

  • Lee, Dong-Hyun;Zhu, Xun;Seo, Seung-Woo;Ryu, Ji-Chang;Cho, Sung-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.683-686
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    • 2009
  • We report inverted white OLEDs fabricated by full wet processes. We utilized inverted structure OLEDs since the structure was better for the realization of full wet fabrication of OLEDs. It was found that the performance of inverted OLEDs is comparable to that of conventional OLEDs. In this presentation, we will discuss in detail a few important issues on the full wet fabrication of OLEDs.

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An Instance of Selecting Retention Chemicals Based on Simultaneous Analysis of Retention, Drainage and Formation of RDA (Retention and Drainage Analyzer) Sheets (보류, 탈수, 지합을 종합적으로 고려한 Retention and Drainage Analyzer (RDA) 활용 보류향상제의 선정사례)

  • Jeon, Chang-Hoon;Ryu, Jeong-Yong;Song, Bong-Keun;Seo, Young-Bum;Chung, Sung-Hyun
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.42 no.3
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    • pp.7-13
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    • 2010
  • KOptimization and control of wet-end process provide a key solution to improve paper quality and production efficiency at the same time. Wet-end of paper machine is to determine three important influencing factors of papermaking i.e., retention, drainage and formation. Good formation of paper could be made at the cost of deteriorated retention or drainage. In the same manner increase of retention aid could cause the bad formation of paper. It is very important to find a proper retention chemical which may satisfy one of three factors without the sacrifice of other two. Laboratory scale analyzing or screening chemical additives of wet-end was reported in this study based on RDA sheet molding. Different from the conventional test method, simultaneous consideration of three important wet-end properties could be made by RDA and consequently more reliable prediction of actual paper machine wet-end could be expected.

A Study on ILD(Interlayer Dielectric) Planarization of Wafer by DHF (DHF를 적용한 웨이퍼의 층간 절연막 평탄화에 관한 연구)

  • Kim, Do-Youne;Kim, Hyoung-Jae;Jeong, Hae-Do;Lee, Eun-Sang
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.5
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    • pp.149-158
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    • 2002
  • Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

Fabrication and Characterization of Cf/SiC Composite with BN Interphase Coated by Wet Chemical Process (습식법으로 제조된 BN 중간층을 가진 Cf/SiC 복합재의 제조 및 물성 평가)

  • Koo, Jun-mo;Kim, Kyung Ho;Han, Yoonsoo
    • Journal of the Korean institute of surface engineering
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    • v.50 no.6
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    • pp.523-530
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    • 2017
  • In this study, we developed the h-BN interphase for ceramic matrix composites (CMCs) through a wet chemical coating method, which has excellent price competitiveness and is a simple process as a departure from the existing high cost chemical vapor deposition method. The optimum condition for nitriding an h-BN interphase using boric acid and urea as precursors were derived, and the h-BN interphase coating through a wet method on a carbon preform of 2.5 D was conducted to apply the optimum conditions to the CMCs. In order to control the coating property via the wet coating method, four parameters were investigated such as dipping time of the specimen in the precursor solution, the ratio of boric acid and urea in the precursor, the concentration of solution where the precursor was dissolved, and the cycle of dipping and dry process. The CMCs was fabricated through polymer impregnation and pyrolysis (PIP) processes and a three-point flexural strength test was conducted to verify the role of the coated h-BN interphase.

Operating Condition of RDA for The Simultaneous Analysis of Retention, Drainage and Uniformity of Various Kinds of Papers (보류, 탈수, 지합의 종합분석을 위한 지종별 RDA 초지 조건)

  • Yoon, Won-Ho;Ryu, Jeong-Yong
    • Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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    • 2008.05a
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    • pp.87-122
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    • 2008
  • In order to manage the papermaking procedure in an effective way, it is inevitably required to measure and estimate the various changing parameters of wet-end process control. This content is devoted to the explanation of lab scale new investigating method regarding wet-end process of paper machine by using RDA.

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