• Journal of Korean Society of Environmental Engineers
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• v.22 no.12
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• pp.2263-2273
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• 2000

Catalytic wet air oxidation of acetic acid over Mn-Ce based catalysts deposited on various supports ($SiO_2$, $TiO_2$, $ZrO_2$), $ZrSiO_4$, $ZrO_2(10wt%)/TiO_2$) have been carried out in high pressure microreactors. Also, promotional effects by small addition(O.5~1.0 wt%) of p-type semiconductors (CoO, $Ag_2O$, SnO) have been investigated. From the screening tests for initial activity ranking, both Mn(2.8)-Ce(7.2 wt%) and Ru(O.4)Mn(2.7)-Ce(6.9 wt%) supported on $TiO_2$ were selected as the promising reference candidates. In $Mn-Ce/TiO_2$ reference catalyst, addition of small amount of each p-type semiconductor (Co, Sn and Ag) resulted in activity promotional effect and the degree of the increase was in the following order: Co> Ag > Sn. Especially, $Mn-Ce/TiO_2$ promoted with 0.5 wt% Co gave the 2.6 folds activity increase compared to the reference case attributing to the surface area increase as well as synergy effect. In $Ru-Mn-Ce/TiO_2$ reference catalyst, only Co(1.0 wt%) promoted case showed a little reaction rate increase.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.

• Journal of information and communication convergence engineering
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• v.1 no.2
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.93-102
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• 2013

Macro porous ceramics possessing controlled microstructures and chemical compositions have increasingly proven useful in the industrial sphere. Their sintered structures have found application in both established and emerging, areas such as thermal insulation in buildings, filtration of liquids and molten materials, refractory insulation, bone scaffolds and tissue engineering. Stable ceramic foams can be formed by wet chemical methods using inorganic particles(e.g., $Al_2O_3$ or $SiO_2$). The wet foams are dried and sintered with improved porosity and mechanical properties. This review examines the different techniques used to prepare porous ceramics from ceramic foams, focusing on the explanation of this versatile method of direct foaming from the past to the present. Comparisons of the processes and the processing parameters are explained with the produced microstructures.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.685-690
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• 1998

The wetting behavior and the characteristic of spontaneous infiltration of pure Al and Al-(Si)-Mg alloys on {{{{ { {Al }_{ 2} O}_{3 } }} in vacuum argon and nitrogen atmosphere were investigated to find out the spontaneous in-filtration mechanism. The wetting of molten Al and Al alloys on {{{{ { {Al }_{ 2} O}_{3 } }} was only possible in cacuum at-mosphere but the sponataneous infiltration of molten Al-(Si)-Mg alloys was successfully made on {{{{ { {Al }_{ 2} O}_{3 } }} pre-form in nitrogen atmoshpere. The difference of wettability and spontaneous infiltration of molten Al and Al alloys on {{{{ { {Al }_{ 2} O}_{3 } }} were found to be related to formation of the Mg-N compound coated layer on {{{{ { {Al }_{ 2} O}_{3 } }} particles which was believd to increase wettability of molten Al alloys on {{{{ { {Al }_{ 2} O}_{3 }.

• Korean Journal of Metals and Materials
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• v.47 no.7
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• pp.423-432
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• 2009

In the galvanizing coating process, the effects of the silicon content on the coatability and wettability of molten zinc were investigated on Dual-Phase High Strength Steels (DP-HSS) with various Si contents using the galvanizing simulator and dynamic reactive wetting systems. DP-HSS showed good coatability and a well-developed inhibition layer in the range of Si content below 0.5 wt%. Good coatability was the results of the mixed oxide $Mn_{2}SiO_{4}$, being formed by the selective oxidation on the surface, with a low contact angle in molten zinc and a large fraction of oxide free surface that provided a sufficient site for the molten zinc to wet and react with the substrate. On the other hand, with more than 0.5 wt%, DP-HSS exhibited poor coatability and an irregularly developed inhibition layer. The poor coatability was due to the poor wettability that resulted from the development of network-type layers of amorphous ${SiO}_{2}$, leading to a high contact angle in molten zinc, on the surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.249-254
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• 1998

The etching experiments for n-GaN were done using the wet chemical, photo-enhanced-chemical and electro-chemical etching methods. The experimental results show that n-GaN is etched is diluted NaOH solution at room temperature and the removed thickness of n-GaN is linearly increased with etching times. The etching rate of the photo-enhanced-chemical and electro-chemical etching methods are several times higher than that of the wet chemical method. The maximum etching rate of n-GaN with $n{\fallingdotseq}1{\times}10^{19}cm^{-3}$ was 164 $\AA$/min under the experimental condition of the Photo-enhanced-chemical etching. The etching rates of n-GaN are very much dependant on the electron concentrations of the samples. The pattern is $100{\mu}m{\times}100{\mu}m$ rectangulars covered with $SiO_2$film. It is shown that the etched side-wall charactistics of the pattern is vertical without dependance of the n-GaN orientations, and the smoothness of etched n-GaN surface is fairly flat.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.604-609
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• 2016

This study reports on wet-foam stability with respect to porous ceramics from a particle-stabilized colloidal suspension that is achieved through the addition of polymethyl methacrylate (PMMA) using a wet process. To stabilize the wet foam, an initial colloidal suspension of $Al_2O_3$ was partially hydrophobized by the surfactant propyl gallate (2 wt.%) and $SiO_2$ was added as a stabilizer. The influence of the PMMA content on the bubble size, pore size, and pore distribution in terms of the contact angle, surface tension, adsorption free energy, and Laplace pressure are described in this paper. The results show a wet-foam stability of more than 83%, which corresponds to a particle free energy of $2.7{\times}10^{-12}J$ and a pressure difference of 61.1 mPa for colloidal particles with 20 wt.% of PMMA beads. It was possible to control the uniform distribution of the open/closed pores by increasing the PMMA content and by adding thick struts, leading to the achievement of a higher-stability wet foam for use in porous ceramics.