• 한국산학기술학회논문지
• /
• 제18권3호
• /
• pp.312-319
• /
• 2017

국내 부존 청광 규조토의 고부가가치 활용을 위해 물리적인 불순물 정제 및 정제 규조토 중의 SiO2 성분을 규소원으로 한 탄화규소 분말합성에 대해 연구하였다. 청광 규조토를 hammer mill을 이용해서 분쇄한 후 체가름을 통한 입도 분리에 의해서 약 30% 정도의 철분 ($Fe_2O_3$) 정제 효과를 얻을 수 있었으며, 325 mesh 이하 입도 분말의 철분 함량은 약 2% 이었다. 습식 및 건식 자력선별의 경우 모두 철분 함량의 분리 및 정제 효과가 일부 있었지만 회수되는 비자성 부산물 중의 철분 함량이 약 2%로 잔존양이 많음을 알 수 있었다. 청광 원광의 물 침출은 철분 제거에 효과적이었으며, 물 침출 결과 약 40% 정도의 철분이 제거되었다. 또한 정제 규조토 중의 $SiO_2$ 성분을 탄소 (흑연, 카본블랙)로 환원 탄화 반응시켜 ${\beta}$-SiC를 합성하였고, 합성 분말의 산처리를 통한 철분 정제 및 비표면적 변화 등에 대해 연구하였다. 환원제로 흑연보다는 카본블랙을 사용함이 보다 효과적이었고, 산처리공정에 의해 Fe, Ca 등의 불순물들이 거의 제거되었고, 비표면적은 $52.5m^2/g$ 까지 증가하였다.

• 한국전기전자재료학회논문지
• /
• 제15권4호
• /
• pp.301-307
• /
• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• 한국전기전자재료학회논문지
• /
• 제29권6호
• /
• pp.321-326
• /
• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 하계학술대회 논문집 C
• /
• pp.1816-1818
• /
• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.1020-1023
• /
• 2002

We successfully developed a-Si TFT controlled active matrix cathode (AMC) with gated Mo emitters. Also, we could remove emitter failures of the AMC through a novel surface treatment of Mo-tips, which indicates reduction of $MoO_3$ or chemical wet etching of $MoO_3$ by surface treatment. Transient behaviors of the AMC are strongly dependent on not only DC characteristics of device but also the device structure. Brightness and gray scale were well realized by low-voltage scan and data signals addressed to a-Si TFTs.

• 한국재료학회지
• /
• 제27권8호
• /
• pp.403-408
• /
• 2017

We investigated the effect of ZnO buffer layer on the formation of ZnO thin film by ultrasonic assisted spray pyrolysis deposition. ZnO buffer layer was formed by wet solution method, which was repeated several times. Structural and optical properties of the ZnO thin films deposited on the ZnO buffer layers with various cycles and at various temperatures were investigated by field-emission scanning electron microscopy, X-ray diffraction, and photoluminescence spectrum analysis. The structural investigations showed that three-dimensional island shaped ZnO was formed on the bare Si substrate without buffer layers, while two-dimensional ZnO thin film was deposited on the ZnO buffer layers. In addition, structural and optical investigations showed that the crystalline quality of ZnO thin film was improved by introducing the buffer layers. This improvement was attributed to the modulation of the surface energy of the Si surface by the ZnO buffer layer, which finally resulted in a modification of the growth mode from three to two-dimensional.

• 한국세라믹학회지
• /
• 제36권2호
• /
• pp.159-166
• /
• 1999

티타니아가 첨가된 불투명한 실리카 에어로겔의 물성 및 열처리에 따른 미세구조 변화가 연구되었다. 부분가수 분해된 TEOS-이소프로판을 용액에 titanium isopropoxide를 첨가한후 겔화시킨 습윤겔을 초임계건조(25$0^{\circ}C$, 1250 psig)하여 모노리스 타입 에어로겔을 합성하였으며, SiO2-10 mol% TiO2 에어로겔의 밀도와 기공율은 각각 0.23 g/㎤와 90% 이었다. 초임계건조시 티타늄의 함량이 증가함에 따라 수축율이 증가할 뿐만 아니라 티타니아는 anatase 상으로 상전이됨과 동시에 입자 응집에 의해 100~800nm 크기의 cluster로 에어로겔 내에 균일하게 분포되었다. 불투명한 에어로겔은 8$mu extrm{m}$ 이하의 적외 영역에서 순수 실리카 에어로겔에 비하여 매우 낮은 광투과율과 $600^{\circ}C$까지 높은 미세구조 안정성을 보여주었다.

• 한국수소및신에너지학회논문집
• /
• 제26권4호
• /
• pp.339-346
• /
• 2015

The synthesis of Fischer-Tropsch (FT) oil is the catalytic hydrogenation of CO to give a range of products, which can be used for the production of high-quality diesel fuel, gasoline and linear chemicals. This studied catalyst was prepared Cobalt-supported alumina and silica by the incipient wet impregnation of the nitrates of cobalt, promoter and organic solvent with supports. Cobalt catalysts were calcined at $350^{\circ}C$ before being loaded into the FT reactors. After the reduction of catalyst has been carried out under $450^{\circ}C$ for 24h, FT reaction of the catalyst has been carried out at GHSV of 4,000/hr under $200^{\circ}C$ and 20atm. From these experimental results, we have obtained the results as following; In case of $SiO_2$ catalysts, the activity of 12wt% $Cobalt-SiO_2$ synthesized by organic solvent was about 2 or 3 times higher than the activity of 12wt% $Cobalt-SiO_2$ catalyst synthesized without organic solvent. In particular, the activity of the $Cobalt-SiO_2$ catalyst prepared in the presence of an organic solvent P was two to three times higher than that of the $Cobalt-SiO_2$ catalyst prepared without the organic solvent. Effect of Cr and Cu metal as a promoter was found little. 200 h long-term activity test was performed with a $Co/SiO_2$ catalyst prepared in the presence of an organic solvent of Glyoxal solution.

• 한국세라믹학회지
• /
• 제27권6호
• /
• pp.747-754
• /
• 1990

Aluminum hydrate gels were prepared from the mixtures of bauxite and ammonium sulfate by wet acid process. Optimum conditions for obtaining the maximum yield( 99%) of aluminum hydrates from the same amount of bauxite were confirmed as follows ; 1. Mixing ratio ; addition of 25mole% of ammonium sulfate to 1mole of bauxite. 2. Calcination ; heated at 350℃ for 1hr. 3. Extraction ; leached at 95℃ in 1% H2SO4 for 90min. 4. pH of precipitating solution; slight below 7.0. Amorphous aluminum hydrates were precipitated at the pH lower than 8.5, but the precipitates crystallized to bayerite at the pH was 10. Mean diameter of α-Al2O3 powders which were obtained by calcining the aluminum hydrates was below 0.2㎛, and EDS analysis revealed than SiO2 was it's primary impurity.

• 한국결정성장학회지
• /
• 제11권5호
• /
• pp.224-230
• /
• 2001

초박막 게이트 유전막 및 비휘발성 기억소자의 게이트 유전막으로 연구되고 있는 $NO/N_2O$ 열처리된 재산화 질화산 화막의 특성을 D-SIMS(Dynamic Secondary Ion Mass Spectrometry), ToF-SIMS(Time-of-Flight Secondary Ion Mass Spectrometry), AES(Auger Electron Spectroscopy)으로 조사하였다. 시료는 초기산화막 공정후에 NO 및 $N_2O$ 열처리를 수행하였으며, 다시 재산화공정을 통하여 질화산화막내 질소의 재분포를 형성토록하였다. 재산화에 있어서 습식산화시 공정에 사용된 수소에 의한 영향으로 계면 근처에 축적된 질소가 Si≡N 결합을 쉽게 이탈함에 따라 방출이 촉진되어 건식산화에 비하여 질소의 감소가 더욱 두드러지게 나타났다. 재산화에 따른 질화산화막내 질소의 거동은 외부로의 방출과 기판으로의 확산이 동시에 나타난다. 재산화후 질화산화막내 축적된 질소의 결합종을 분석한 결과, 초기산화막 계면근처의 질소는 SiON의 결합종이 주도적으로 나타나는 반면 재산화 후 새롭게 형성된 $Si-SiO_2$ 계면근처로 확산한 질소는 $Si_2NO$ 결합종이 주로 검출된다. SiON에 의한 질소의 미결합손과 $Si_2$NO에 의한 실리콘의 미겨랍손은 기억특성에 기여하는 결함을 포함하기 때문에 재산화 질화산화막내 존재하는 SiON과 $Si_2$NO 결합종은 모두 전하트랩의 기원과 관련된 결합상태로 예상된다.