• 자원환경지질
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• 제40권6호
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• pp.727-738
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• 2007

운봉지역 하상퇴적물에 대한 지구화학적 특성규명을 통해, 주성분원소 및 미량원소에 대한 자연 배경치를 제시하고, 그 기반암(압쇄상화강암, Kim et al., 1992)과의 비교를 통해 지구화학적 재해에 대해 예견하고자 한다. 73개의 하상퇴적 물시료를 물이 흐르고 있는 1차 수계를 대상으로 채취하였고, XRD, XRF ICP-AES, NAA를 이용하여 주성분원소 및 미량성분원소를 분석하였다. 운봉지역의 주성분원소 함량은 $SiO_2\;36.94{\sim}65.39 wt.%,\;Al_2O_3\;10.15{\sim}21.77wt.%,\;Fe_2O_3\;3.17{\sim}10.90wt.%,\;CaO\;0.55{\sim}5.27wt.%,\;MgO\;0.52{\sim}4.94wt.%,\;K_2O\;1.38{\sim}4.54wt.%,\;Na_2O\;0.49{\sim}3.36wt.%,\;TiO_2\;0.39{\sim}1.27wt.%,\;MnO\;0.04{\sim}0.22wt.%,\;P_2O_5\;0.08{\sim}0.54wt.%$의 범위를 보이며, 미량성분 및 희토류원소 함량은, $Cu\;4.8{\sim}134ppm,\;Pb\;24.2{\sim}82.5ppm,\;Sr\;95.9{\sim}739ppm,\;V\;19.9{\sim}124ppm,\;Zr\;52.9{\sim}145ppm,\;Li\;25.2{\sim}3.3ppm,\;Co\;3.87{\sim}50.0ppm,\;Cr\;17.4{\sim}234ppm,\;Hf\;3.93{\sim}25.2ppm,\;Sc\;4.60{\sim}20.6ppm,\;Th\;3.82{\sim}36.9ppm,\;Ce\;45.7{\sim}243ppm,\;Eu\;0.89{\sim}2.69ppm,\;Yb\;1.42{\sim}5.18ppm$의 범위를 보인다. 주성분원소의 함량비교에서 CaO, $Na_2O,\;K_2O$ 함량은 하상퇴적물에서 기반암(압쇄상화강암류, Kim et al., 1992)인 압쇄상화강암류보다 높게 나타난다. 그리고 $Al_2O_3$와 $SiO_2$는 하상퇴적물과 기반암(압쇄상화강암류, Kim et al., 1992) 모두에서 높은 상관관계를 보인다. 하상퇴적물에서는 $SiO_2$ 함량이 높아질수록 희토류원소 함량도 같이 증가하는 특징을 보이나, 압쇄상화강암류에서는 $SiO_2$ 함량이 높아질수록 희토류원소 함량은 감소하는 특징을 보인다.

• 한국재료학회지
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• 제7권1호
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• pp.76-80
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• 1997

용융탄산염 연료전지 분리판의 wet-seal부의 내식성 향상을 위한 NiAl 피복공정이 조사되었다. AlSl 316 스테인레스강위에 Ni과 Al를 순차적으로 피복한 후, $800^{\circ}C$에서 3시간 열처리하여 NiAl상이 형성됨을 확인할 수 있었다. NiAl상이 피복된 스테인레스강은 $650^{\circ}C$, 용융탄산염($62^{m}/_{o}Li_2CO_3-38^{m}/_{o}/K_{2}CO_{3}$)내에서 침지시험을 통해 내식성이 평가되었는데, AISI 316 스테인레스강에 비해 우수한 내식성을 보였다. 이는 표면에 치밀하게 형성된 AI 산화물층에 의한 것으로 판단되었다.

• 한국재료학회지
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• 제12권11호
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• pp.865-869
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• 2002

We investigated the reaction stability of titanium, cobalt and their bilayer films with side-wall spacer materials of SiO$_2$ for the salicide process. We prepared Ti 350 $\AA$, Co 150 $\AA$, Co 150 $\AA$/Ti 100 $\AA$ and Ti 100 $\AA$/Co 150 $\AA$ films on 1000 $\AA$-thick thermally grown SiO$_2$ substrates, respectively. Then the samples were rapid thermal annealed at the temperatures of $500^{\circ}C$, $600^{\circ}C$, and $700^{\circ}C$ for 20 seconds. We characterized the sheet resistance of the metallic layers with a four-point probe, surface roughness with scanning probe microscope, residual phases with an Auger depth profilometer, phase identification with a X-ray diffractometer, and cross-sectional microstructure evolution with a transmission electron microscope, respectively. We report that Ti reacted with silicon dioxide spacers above $700^{\circ}C$, Co agglomerated at $600^{\circ}C$, and Co/Ti, Ti/Co formed CoTi compound requiring a special wet process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 세라미스트
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• 제9권6호
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• pp.42-48
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• 2006

The structural ceramic, such as $A1_2O_3,\;ZrO_2\;and\;Si_3N_4$ have applied as several parts of precision machines, automotives and instruments for semiconductor. The mechanical properties depended on purity, morphology and microstructure of the ceramic and its fabrication process. High purity and fine starting powder for the structural ceramic was prepared mainly by wet process and powder processing such as milling, mixing, drying and granulating strongly influenced on the fabrication process. Powder processing included powder synthesis technology is essential for ceramic manufacture. Also, the advanced mechanical treat[neat in powder processing to create nano composite powder was developed to improve several properties of ceramic materials. Innovation of powder processing will lead to improve mechanical and functional properties of the ceramics.

• 청정기술
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• 제25권3호
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• pp.179-188
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• 2019

석탄화력 발전시 석탄은 석탄회로 발생하게 되는데 비회(fly ash)가 80%, 저회(bottom ash)가 20% 비율로 발생된다. 그러나 이들 대부분은 재활용되지 못하고 매립장에 전량 폐기되고 있고, 비회 및 저희를 매립하는 매립장이 포화될 경우 새로운 대체 매립장을 건설하지 못하는 한 석탄화력발전소의 운영을 중지해야 하는 경우가 발생할 수 있다. 본 연구에서는 비회를 재활용하여 자원화하기 위해 습식 부유선별기술(부선과정)을 이용하여 비회 내 유용성분{미연탄소(unburned carbon, UC), 뮬라이트(ceramic microsphere, CM), 실리카(cleaned ash, CA)}을 회수하였으며, 회수된 유용성분들의 특성분석으로 산업 소재로 재활용 가능성을 조사하였다. 비회로부터 회수된 유용성분의 회수율은 UC 92.10%, CM 75.75%, CA 69.71%로 부선과정을 통하여 UC가 다른 성분보다 회수율이 16 ~ 22% 더 우수한 것으로 나타났다. UC의 연소가능성분(combustible component, CC)은 52.54wt%, 발열량도 $4,232kcal\;kg^{-1}$로 높아서 석탄 기준 C의 함량 100%일 경우 $8,100kcal\;kg^{-1}$로 감안할 때 산업용 연료로 사용이 가능할 것으로 사료된다. CM과 CA의 분리는 pH의 영향으로 UC 보다는 화학적 분리가 효과적이었으며, 회수된 CA의 $SiO_2$ 함량은 78.66wt%, CM의 $SiO_2$ 함량은 53.55wt%로 나타나 산업용 소재로 재활용 가능성을 확인할 수 있었다.

• Advances in concrete construction
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• 제2권2호
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• pp.109-123
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• 2014

This paper presents chloride induced corrosion durability of reinforcing steel in geopolymer concretes containing different contents of sodium silicate ($Na_2SiO_3$) and molarities of NaOH solutions. Seven series of mixes are considered in this study. The first series is ordinary Portland cement (OPC) concrete and is considered as the control mix. The rest six series are geopolymer concretes containing 14 and 16 molar NaOH and $Na_2SiO_3$ to NaOH ratios of 2.5, 3.0 and 3.5. In each series three lollypop specimens of 100 mm in diameter and 200 mm in length, each having one 12 mm diameter steel bar are considered for chloride induced corrosion study. The specimens are subjected to cyclic wetting and drying regime for two months. In wet cycle the specimens are immersed in water containing 3.5% (by wt.) NaCl salt for 4 days, while in dry cycle the specimens are placed in open air for three days. The corrosion activity is monitored by measuring the copper/copper sulphate ($Cu/CuSO_4$) half-cell potential according to ASTM C-876. The chloride penetration depth and sorptivity of all seven concretes are also measured. Results show that the geopolymer concretes exhibited better corrosion resistance than OPC concrete. The higher the amount of $Na_2SiO_3$ and higher the concentration of NaOH solutions the better the corrosion resistance of geopolymer concrete is. Similar behaviour is also observed in sorptivity and chloride penetration depth measurements. Generally, the geopolymer concretes exhibited lower sorptivity and chloride penetration depth than that of OPC concrete. Correlation between the sorptivity and the chloride penetration of geopolymer concretes is established. Correlations are also established between 28 days compressive strength and sorptivity and between 28 days compressive strength and chloride penetration of geopolymer concretes.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 춘계학술발표회 초록집
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• pp.41-41
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• 2003

텅스텐(W)은 높은 thermal stability 와 process compatibility 및 우수한 corrosion r resistance 둥으로 integrated circuit (IC)의 gate 및 interconnection 둥으로의 활용이 대두되고 있으며, 차세대 thin film transistor liquid crystal display (TFT-LCD)의 gate 및 interconnection m materials 둥으로 사용되고 았다. 그러나, 이러한 장점을 가지고 있는 팅스텐 박막이 실제 공정상에 적용되가 위해서는 건식 식각이 주로 사용되는데, 이는 wet chemical 을 이용한 습식 식각을 사용할 경우 낮은 etch rate, line width 의 감소 및 postetch residue 잔류 동의 문제가 발생하기 때문이다. 또한 W interconnection etching 을 하기 위해서는 높은 텅스텐 박막의 etch rate 과 하부 layer ( (amorphous silicon 또는 poly-SD와의 높은 etch selectivity 가 필수적 이 라 할 수 있다. 그러 나, 지금까지 연구되어온 결과에 따르면 텅스탠과 하부 layer 와의 etch selectivity 는 2 이하로 매우 낮게 관찰되고 았으며, 텅스텐의 etch rate 또한 150nm/min 이하로 낮은 값을 나타내고 있다. 따라서 본 연구에서는 halogen-based inductively coupled plasma 를 이용하여 텅스텐 박막 식각시 여러 가지 첨가 가스에 따른 높은 텅스탠 박막의 etch rate 과 하부 layer 와의 높은 etch s selectivity 를 얻고자 하였으며, 그에 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.

• Advances in nano research
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• 제17권2호
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• pp.125-136
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• 2024

In the present research the durability and geotechnical properties of an expensive clayey soil stabilized by two different compositions of additives were investigated and compared. The first composition consisted of environmentally and ecofriendly materials: BOF steel slag ranging from 0-20% as well as rice husk ash (RHA) ranged 0-16%wt of dry soil. The other composition consisted of relatively new generation of materials including nanomaterials: nano-CaCO3 as well as nano-SiO2. Atterberg limits test, free swell percent test, swelling pressure test and unconfined compressive test were used to assess the stabilizers influences upon expansive soil geotechnical characteristics. Also, the recurrent wet-dry cycles test was exerted on experimental and non-experimental samples for estimating stabilizers effects on durability. According to the results, each of the BOF slag and RHA enhances the expansive soil properties individually, while combination of slag-RHA led to better improvement of the soil properties. Also, the composition of nano-CaCO3 and SiO2 dramatically improved the clay soil operation. The optimum values of slag+RHA were suggested as 20% slag+12% RHA to enhance percent of swelling, pressure of swelling in addition to UCS as much as 95%, 96%, and 370%, respectively. The optimum value for the second stabilizer in this study was found to be 2%nano-SiO2+2% nano-CaCO3 which led to 318% increase in UCS and 86% decrease in swelling pressure.

• 반도체디스플레이기술학회지
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• 제7권1호
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• pp.1-5
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• 2008

In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensor's structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator($SiO_2$) layer of SOI(Si/$SiO_2$/Si-sub) wafer as delay layer of dry etching. Size of fabricated diaphragm is $1000{\times}1000{\times}7\;{\mu}m^3$ and overall chip $3000{\times}3000{\times}7\;{\mu}m^3$. We measured the variation of output voltage toward the change of gas pressure to analyze characteristics of the fabricated sensor. Sensitivity of fabricated sensor was relatively high as about 1.5mV/V kPa at 1kPa full-scale. Nonlinearity was below 0.5%F.S. Over-pressure range of the fabricated sensor is 100kPa or more.