• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.401-401
• /
• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• The Journal of the Petrological Society of Korea
• /
• v.3 no.2
• /
• pp.156-170
• /
• 1994

The talc ore deposits can be divided into chloritic and dolomitic ores according to mineral assemblages. The former is mainly composed of chlorite and talc accompanied with dolomite, muscovite and opaque mineral, and the latter of dolomite and talc with serpentine, calcite and magnesite in places. Talc was originated from chlorite and serpentine. Carbonate minerals were formed either directly from the introduced hydrothermal solution or secondarily as a by-product of steatitization of chlorite and serpentine. The process of talc formation may be governed by the chemical composition of the host rocks and the amount and/or chemical composition of the hydrothermal solution which may be different in places. However, the representative reactions producing talc from chlorite and serpentine are as follows : (1) chlorite+$Mg^{++}+Si^{4+}+H_2O$=talc, (2) chlorite+$Mg^{++}+Si^{4+}+Ca^{++}+CO_2+O_2+H_2O$=talc+ dolomite+ magnesite, and (3) serpentine +$Mg^{++}+Fe^{++}+Si^{4+}+Ca^{++}+CO_2+H_2O$=talc+dolomite. The reactions indicate that the carbonate minerals can be formed when the hydrothermal solution have high $fO_2$ and $fCO_2$. The steatitization might be proceeded by the hydrothermally metasomatic reaction between chlorite schist or chlorite gneiss intercalated in the granitic gneiss and hydrothermal solution accompanied to the wet granitization.

• Journal of Korea Technical Association of The Pulp and Paper Industry
• /
• v.42 no.1
• /
• pp.64-73
• /
• 2010

This study was conducted to modify the surface properties of papers by formation of hydrophobic self-assembled monolayer(SAM) on paper surface with silanes. A base paper I(0.5% AKD) and base paper II(1.0-1.5% AKD) were reacted with silanes(PFDTES, DMDCS, MODDCS) by immersion method and vapor deposition method. Hydrophobic SAMs(contact angle value>$120^{\circ}C$) were obtained on all papers after treatment with $10^{\mu}l$ PFDTES for 15min, with $50^{\mu}l$ DMDCS for 30min, with $50^{\mu}l$ MODDCS for 300min. When applying PFDTES to paper surface, lower silane concentration and shorter reaction time were required, whereas MODDCS with long alkyl chain required the longest reaction time of 300min. The st$\ddot{o}$ckight sizing degree of silane treated papers were increased between 105sec(base paper I) and 130sec(base paper II). The wet tensile strength of PFDTES-treated base papers(I, II) increased by 10-34% after SAM formation. However, the wet tensile strength of the DMDCS-treated base paper(I) was found to decrease from 0.067kN/m to 0.038kN/m; this may due to the cellulose degrading as a result of generated hydrogen chloride when hydroxyl group of cellulose were reacted with DMDCS. No apparent changes of PPS roughness on silane-treated papers are observed. The ATR-IR spectrum showed absorption peak located at 465 and 1200cm-1 which can be assigned to the Si-O-C asymmetric stretching and Si-O-C bonds, respectively.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.11a
• /
• pp.50.1-50.1
• /
• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

• Proceedings of the Optical Society of Korea Conference
• /
• 2009.02a
• /
• pp.491-492
• /
• 2009

We have fabricated a microlens integrated silicon (Si) structure for optical interconnects. To form microlenses, the Si wafer was wet-etched with $SiN_x$ mask in a HF:$HNO_3:C_2H_4O_2$ solution and then the holes were filled with a AZ9260 photoresist. The focal length of microlens increased in proportional to its radius of curvature (ROC). For the ROC of $100-161{\mu}m$, the focal lengths were obtained approximately between $160{\mu}m$ and $310{\mu}m$, in an agreement with the simulated values using a ray tracing method.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.705-708
• /
• 2003

To observe a hydrated biological specimen, an environmental chamber was necessary to keep the specimen in a wet state under vacuum surroundings. The specimen holder is as follows designed consequently. The specimen holder consisted of two Si wafers, the centers of which were Si$_3$N$_4$(100nm thickness) windows of a 0.3mm square. The windows were made by a photo-lithographic method. The transmission of a window at 400eV is about 70%. A hydrated biological specimen was put between the two windows. When the chamber was closed, two wafers were contact at the metal mesh by the pressure of O-rings, and the specimen holder moved by the three micrometers.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.9
• /
• pp.1386-1392
• /
• 1990

Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.6
• /
• pp.240-246
• /
• 2021

In the ceramic industry, a drastic decrease in crystalline formation was found even among the glazes well known for their high crystalline productivity when the ceramic glaze was stored in wet conditions over a period. This study aimed to investigate the reason for decreasing willemite crystals during storage. As the starting materials ZnO, calcined ZnO and frit 3110 are selected; the composition for zinc crystalline glazes was set through a three-component system with the materials. The firing condition was used from previous studies. The study was observed how wet conditions affected the crystallization of zinc crystalline glazes from a day to 24 weeks. The results were obtained by particle size analysis, XRD, Raman spectroscopy and SEM analysis. The results indicated that ZnO is advantageous in terms of willemite crystalline development and growth; however, Zn(OH)₂ cluster, formed by the reaction with water during the storage, caused the decrease in ZnO level in the glaze. The reduction of ZnO in the glaze eventually interfered the willemite development and growth.

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.326-328
• /
• 1995

SiC buffer layers were grown on Si(100) substrates by ultra-high-vacuum electron cryclotron resonance plasma (UHV ECR plasma) from $CH_4/H_2$ mixture at 700$^{\circ}C$. The electron densities and temperature were measured by single probe. The axial plasma potentials measured by emissive probe had the double layer structure at positive substrate bias. Piranha cleaning was carried out as ex-situ wet cleaning. Clean and smooth silicon surface were prepared by in-situ hydrogen plasma cleaning at 540$^{\circ}C$. A short exposure to hydrogen plasma transforms the Si surface from 1$\times$1 to 2$\times$1 reconstruction. It was monitored by reflection high energy electron diffraction (RHEED). The defect densities were analysed by the dilute Schimmel etching. The results showed that the substrate bias is important factor in hydrogen plasma cleaning. The low base pressure ($5\times10^{-10}$ torr) restrains the $SiO_2$ growth on silicon surface. The grown layers showed different characteristics at various substrate bias. RHEED and K-ray Photoelectron spectroscopy study showed that grown layer was SiC.

• Bulletin of the Korean Chemical Society
• /
• v.24 no.3
• /
• pp.400-402
• /
• 2003