• 제목/요약/키워드: Wet $SiO_2$

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Geochemical Characteristics of Stream Sediments in the Konyang Area (곤양지역 하상퇴적물에 대한 지구화학적 특성)

  • Park Yaung-Seog;Park Dae-Woo
    • Economic and Environmental Geology
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    • v.39 no.3 s.178
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    • pp.329-342
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    • 2006
  • The purpose of this study is to determine the geochemical characteristics for the stream sediments in the Konyang area. So we can estimate the environment contamination and understand geochemical disaster. We collect the stream sediments samples by wet sieving along the primary channels and slowly dry the collected samples in the laboratory and grind to pass a 200mesh using an alumina mortar and pestle for chemical analysis. Mineralogy, major, trace and rare earth elements are determined by XRD, XRE, ICP-AES and NAA analysis methods. For geochemical characteristics on the geological groups of stream sediments, the studied area was grouped into quartz porphyry area, sedimentary rock area, anorthosite area and gneiss area. Contents of major elements for the stream sediments in the Konyang area were $SiO_2\;41.86{\sim}76.74\;wt.%,\;Al_{2}O_{3}\;9.92{\sim}30.00\;wt.%,\;Fe_{2}O_{3}\;2.74{\sim}12.68\;wt.%,\;CaO\;0.22{\sim}3.31\;wt.%,\;MgO\;0.34{\sim}3.97\;wt.%,\;K_{2}O\;0.75{\sim}0.93\;wt.%,\;Na_{2}O\;0.25{\sim}1.92\;wt.%,\;TiO_{2}\;0.40{\sim}3.00\;wt.%,\;MnO\;0.03{\sim}0.21\;wt.%,\;P_{2}O_{5}\;0.05{\sim}0.38\;wt.%$. The contents of trace and rare earth elements for the stream sediments were $Cu\;7{\sim}102\;ppm,\;Pb\;15{\sim}47\;ppm,\;Sr\;48{\sim}513\;ppm,\;V\;29{\sim}129\;ppm,\;Zr\;31{\sim}217\;ppm,\;Li\;14{\sim}94\;ppm,\;Co\;5.6{\sim}32.1\;ppm,\;Cr\;23{\sim}259\;ppm,\;Cs\;1.7{\sim}8.7\;ppm,\;Hf\;2.1{\sim}109.0\;ppm,\;Rb\;34{\sim}247\;ppm,\;Sc\;4.5{\sim}21.9\;ppm,\;Zn\;24{\sim}609\;ppm,\;Sb\;0.8{\sim}2.6\;ppm,\;Th\;3{\sim}213\;ppm,\;Ce\;22{\sim}1000\;ppm,\;Eu\;0.7{\sim}5.3\;ppm,\;Yb\;0.6{\sim}6.4\;ppm$. Generally, the contents of $Al_{2}O_{3}\;and\;SiO_2$ had a good relationships with each other in rocks but it had a bad relationships in stream sediments for this study area. The contents of $Fe_{2}O_3$, CaO, MnO and $P_{2}O_{5}$ had a good relationships with major and minor elements in stream sediments of this study area. The contents of Co and V in the stream sediments had a good relationships with other toxic elements.

Preparation of Feed Glass Materials for Producing a Foamed Borosilicate Glass Body from Waste LCD Panel (폐 LCD판넬로부터 붕규산유리 발포체 제조를 위한 원료 유리 제조)

  • Oh, Chi-Hoon;Park, Yoon-Kook;Lee, Chul-Tae
    • Applied Chemistry for Engineering
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    • v.27 no.4
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    • pp.371-379
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    • 2016
  • In this article, the foamed body of glass was manufactured from the waste borosilicate glass produced by wet pulverization process without additional pretreatment which can be used as a recycling method for waste LCD panel glass. Each 100 g of pulverized waste borosilicate glass with the size of less than 270 mesh were mixed with 0.3 weight fraction of carbon and 1.5 weight fraction of $Na_2CO_3$, $Na_2SO_4$ and $CaCO_3$ and let them foamed for 20 minutes at $950^{\circ}C$ to manufacture the foamed body having the density of less than $0.3g/cm^3$. Additionally, adding $SiO_2$ or $H_3BO_3$ to the mixture enabled the foamed body to have efficient formation of open pores which showed the possibility for producing the foamed body with new functionalities such as sound absorption.

Improvement of Electrical Characteristics in Double Gate a-IGZO Thin Film Transistor

  • Lee, Hyeon-U;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.311-311
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    • 2016
  • 최근 고성능 디스플레이 개발이 요구되면서 기존 비정질 실리콘(a-Si)을 대체할 산화물 반도체에 대한 연구 관심이 급증하고 있다. 여러 종류의 산화물 반도체 중 a-IGZO (amorphous indium-gallium-zinc oxide)가 높은 전계효과 이동도, 저온 공정, 넓은 밴드갭으로 인한 투명성 등의 장점을 가지며 가장 연구가 활발하게 보고되고 있다. 기존에는 SG(단일 게이트) TFT가 주로 제작 되었지만 본 연구에서는 DG(이중 게이트) 구조를 적용하여 고성능의 a-IGZO 기반 박막 트랜지스터(TFT)를 구현하였다. SG mode에서는 하나의 게이트가 채널 전체 영역을 제어하지만, double gate mode에서는 상, 하부 두 개의 게이트가 동시에 채널 영역을 제어하기 때문에 채널층의 형성이 빠르게 이루어지고, 이는 TFT 스위칭 속도를 향상시킨다. 또한, 상호 모듈레이션 효과로 인해 S.S(subthreshold swing)값이 낮아질 뿐만 아니라, 상(TG), 하부 게이트(BG) 절연막의 계면 산란 현상이 줄어들기 때문에 이동도가 향상되고 누설전류 감소 및 안정성이 향상되는 효과를 얻을 수 있다. Dual gate mode로 동작을 시키면, TG(BG)에는 일정한 positive(or negative)전압을 인가하면서 BG(TG)에 전압을 가해주게 된다. 이 때, 소자의 채널층은 depletion(or enhancement) mode로 동작하여 다른 전기적인 특성에는 영향을 미치지 않으면서 문턱 전압을 쉽게 조절 할 수 있는 장점도 있다. 제작된 소자는 p-type bulk silicon 위에 thermal SiO2 산화막이 100 nm 형성된 기판을 사용하였다. 표준 RCA 클리닝을 진행한 후 BG 형성을 위해 150 nm 두께의 ITO를 증착하고, BG 절연막으로 두께의 SiO2를 300 nm 증착하였다. 이 후, 채널층 형성을 위하여 50 nm 두께의 a-IGZO를 증착하였고, 소스/드레인(S/D) 전극은 BG와 동일한 조건으로 ITO 100 nm를 증착하였다. TG 절연막은 BG 절연막과 동일한 조건에서 SiO2를 50 nm 증착하였다. TG는 S/D 증착 조건과 동일한 조건에서, 150 nm 두께로 증착 하였다. 전극 물질과, 절연막 물질은 모두 RF magnetron sputter를 이용하여 증착되었고, 또한 모든 patterning 과정은 표준 photolithography, wet etching, lift-off 공정을 통하여 이루어졌다. 후속 열처리 공정으로 퍼니스에서 질소 가스 분위기, $300^{\circ}C$ 온도에서 30 분 동안 진행하였다. 결과적으로 $9.06cm2/V{\cdot}s$, 255.7 mV/dec, $1.8{\times}106$의 전계효과 이동도, S.S, on-off ratio값을 갖는 SG와 비교하여 double gate mode에서는 $51.3cm2/V{\cdot}s$, 110.7 mV/dec, $3.2{\times}108$의 값을 나타내며 훌륭한 전기적 특성을 보였고, dual gate mode에서는 약 5.22의 coupling ratio를 나타내었다. 따라서 산화물 반도체 a-IGZO TFT의 이중게이트 구조는 우수한 전기적 특성을 나타내며 차세대 디스플레이 시장에서 훌륭한 역할을 할 것으로 기대된다.

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Manufacture and Properties of Coal Fly Ash-Clay Body (석탄회-점토계 소지의 제조 및 물성)

  • 송종택;윤성대;류동우;한경섭
    • Journal of the Korean Ceramic Society
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    • v.33 no.7
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    • pp.771-778
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    • 1996
  • Utilization of fly ash by-produced from coal fired power plants and classified as general waste became very important problem to solve in the environmental protection and recycling of waste materials. The possibility of large scale substitution of fly ash as a raw material for bricks and wet tiles was highly expected because the chemical compositions of fly ash were mostly Al2O3 and SiO2 and the properties of it were very similar with clay. Accordingly in order to investigate the substitutional limit these specimens were substituted from 0 to 100 wt% fly ash by 20wt% increment for clay. Fly ash-clay bodies were fired at 1200, 1250 and 130$0^{\circ}C$ and then their properties were measured, It was found that these specimens sintered at 125$0^{\circ}C$ had a good bending strength. Especially when these sintered bodies were added to 20, 40 and 60 wt% fly ash the bending strength of those were 201 , 205 and 191kg.cm2 respectively with the water absorption below 1%, This showed that fly ash could be substituted ab 60 wt% in this experiment.

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Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate (알루미늄 기판 상의 Ni layer가 a-Si의 AIC(Aluminum Induced Crystallization)에 미치는 영향)

  • Yun, Won-Tae;Kim, Young-Kwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.2
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    • pp.65-72
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    • 2012
  • Aluminum induced crystallization of amorphous silicon was attempted by the aluminum substrate. To avoid the layer exchange between silicon and aluminum layer, Ni layer was deposited between these two layers by sputtering. To obtain the bigger grain of the crystalline silicon, wet blasted silica layer was employed as windows between the nickel and a-Si layer. Ni obtained after the annealing treatment at $520^{\circ}C$ was found to be a promising material for the diffusion barrier between silicon and aluminum. One way to obtain bigger grain of crystalline silicon layer applicable to solar cell of higher performance was envisioned in this investigation.

A Study on Modified Silicon Surface after $CHF_3/C_2F_6$ Reactive Ion Etching

  • Park, Hyung-Ho;Kwon, Kwang-Ho;Lee, Sang-Hwan;Koak, Byung-Hwa;Nahm, Sahn;Lee, Hee-Tae;Kwon, Oh-Joon;Cho, Kyoung-Ik;Kang, Young-Il
    • ETRI Journal
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    • v.16 no.1
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    • pp.45-57
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    • 1994
  • The effects of reactive ion etching (RIE) of $SiO_2$ layer in $CHF_3/C_2F_6$ on the underlying Si surface have been studied by X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Rutherford backscattering spectroscopy, and high resolution transmission electron microscopy. We found that two distinguishable modified layers are formed by RIE : (i) a uniform residue surface layer of 4 nm thickness composed entirely of carbon, fluorine, oxygen, and hydrogen with 9 different kinds of chemical bonds and (ii) a contaminated silicon layer of about 50 nm thickness with carbon and fluorine atoms without any observable crystalline defects. To search the removal condition of the silicon surface residue, we monitored the changes of surface compositions for the etched silicon after various post treatments as rapid thermal anneal, $O_2$, $NF_3$, $SF_6$, and $Cl_2$ plasma treatments. XPS analysis revealed that $NF_3$ treatment is most effective. With 10 seconds exposure to $NF_3$ plasma, the fluorocarbon residue film decomposes. The remained fluorine completely disappears after the following wet cleaning.

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Optimized ultra-thin tunnel oxide layer characteristics by PECVD using N2O plasma growth for high efficiency n-type Si solar cell

  • Jeon, Minhan;Kang, Jiyoon;Oh, Donghyun;Shim, Gyeongbae;Kim, Shangho;Balaji, Nagarajan;Park, Cheolmin;Song, Jinsoo;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.308-309
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    • 2016
  • Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

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The Effect of Promotor and Reaction Condition for FT Oil Synthesis over 12wt% Co-based Catalyst (12wt% Co 담지 촉매에서 합성오일 제조시 조촉매 효과 및 반응조건 영향 분석)

  • Park, Yonhee;Lee, Jiyoon;Jung, Jongtae;Lee, Jongyeol;Cho, Wonjun;Baek, Youngsoon
    • Journal of Hydrogen and New Energy
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    • v.25 no.3
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    • pp.247-254
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    • 2014
  • The synthesis of Fischer-Tropsch oil is the catalytic hydrogenation of CO to give a range of products, which can be used for the production of high-quality diesel fuel, gasoline and linear chemicals. Our cobalt based catalyst was prepared Co/alumina, silica and titania by the incipient wet impregnation of the nitrates of cobalt and promoter with supports. Cobalt catalysts was calcined at $350^{\circ}C$ before being loaded into the FT reactors. After the reduction of catalyst has been carried out under $450^{\circ}C$ for 24hrs, FT reaction of the catalyst has been carried out at GHSV of 4,000/hr under $200^{\circ}C$ and 20atm. From these test results, we have obtained the results as following ; in case of 12wt% Co-supported $Al_2O_3$, $SiO_2$ and $TiO_2$ catalysts, maximum activities of the catalysts were appeared at the promoters of Mn, Mo and Ce respectively. The activity of 12wt% $Co/Al_2O_3$ added a Mn promoter was about 3 times as high as that of 12wt% $Co/Al_2O_3$ catalyst without promoters. When it has been the experiment at the range of reaction temperature of $200{\sim}220^{\circ}C$ and GHSV of 1,546~5,000/hr, the results have shown generally increasing the activities with the increase of reaction temperature and GHSV.

Characteristics of ZnO:Al TCO surface etching of microstructural changes (실리콘 박막 태양전지용 ZnO:Al 투명전도막의 미세구조 변화에 따른 표면 식각 특성)

  • Kim, Han-Ung;Cho, Jun-Sik;Park, Sang-Hyun;Yoon, Kyung Hoon;Song, Jinsoo;O, Byung-Sung;Lee, Jeong Chul
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.100.2-100.2
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    • 2010
  • Superstrate형 실리콘 박막 태양전지에서 전면전극으로 사용되는 투명전도막의 표면형상은 태양전지내로 입사하는 태양광의 표면산란에 영향을 미치며 표면산란 증가를 통한 광 포획 및 단락전류밀도 향상을 통하여 태양전지 효율을 증대시키는 중요한 역할을 한다. 기존에 실리콘박막 태양전지용으로 많이 사용되는 상용 Asahi-U형 투명전도막은 수소 플라즈마에 대한 안정성이 낮고 입사광의 장파장 대역에서의 산란특성이 낮아 실리콘 박막 태양전지의 고효율화에 한계점이 있었다. 최근에 Asahi-U형 투명전도막을 대신하여 ZnO계 투명전도막을 전면전극으로 사용하려는 연구가 활발히 진행되고 있으며 Al을 토핑원소로 사용하는 ZnO:Al 투명전도막은 우수한 전기적, 광학적 특성과 수소플라즈마 안정성 및 저 비용 등의 우수한 장점을 갖고 있다. 스퍼터링 방식으로 제조된 ZnO:Al 투명전도막의 표면형상은 일반적으로 증착 후 습식식각을 통하여 조절되며 식각 전 박막의 미세구조에 영향을 받는 것으로 알려져 있다. 또한 습식 식각 이후의 표면거칠기에 따라 다양한 광학적, 전기적 특성을 나타낸다. 본 연구에서는 in-line RF-magnetron sputter 장비를 이용하여 다양한 공정조건하에서 ZnO:Al 투명전도막을 제조하고 증착된 박막의 미세구조 특성에 따른 습식식각 이후의 표면형상 변화 및 전기적 광학적 특성 변화를 조사하였다.

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Surface modifiers on the waterglass aerogels prepared by ambient drying process (상압건조 물유리 에어로젤에 대한 표면개질제의 영향)

  • Kim, Tae-Jung;Nahm, Sahn;Oh, Young-Jei
    • Journal of Sensor Science and Technology
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    • v.15 no.3
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    • pp.173-178
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    • 2006
  • Silica aerogel with ultra low density and high porosity has been focused on versatile application due to its fascinating properties. Ambient drying process of waterglass, in this study was researched to fabricate a crack-free monolith body in the point view of cost effective way. Wet gel was obtained by removing of $Na^{+}$ ions in waterglass, which contains 8 wt% of $SiO_{2}$. Xylene, which has a low vapor pressure, was used as a solution substitutor to prevent the formation a cracks during drying. Various surface modifiers like as hexamethyldisilazane (HMDSZ), trimethylchlorosilane (TMCS), methyltriethoxylsilane (MTES), methyltrimethoxysilane (MTMS) and phenyltriethoxysilane (PTES) were used in order to improve hydrophobicity of the waterglass Silica aerogel. Some physical properties of the surface modified aerogels were investigated by FT-IR, TGA, BET and SEM. Hydrophobicity and hydrophilicity of Silica aerogel is attributed to the Si-OH bond and the non-polar C-H bond groups on the surface of aerogel. Crack-free waterglass aerogel with >90 % of porosity, 17 nm of pore size and <0.15 $g/cm^{3}$ of density was prepared. HMDSZ and TMCS are effective as a surface modifier