• Economic and Environmental Geology
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• v.38 no.4 s.173
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• pp.481-492
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• 2005

The purpose of this study is to determine geochemical characteristics for stream sediments in the Gwangju area. We collect the stream sediments samples by wet sieving along the primary channels and dry these samples slowly in the laboratory and grind to under 200mesh using an alumina mortar fur chemical analysis. Major elements, trace and rare earth elements are determined by XRF, ICP-AES and NAA analysis methods. For geochemical characteristics on geological groups of stream sediments, we separate geologic groups which are derived from Precambrian granite gneiss area, Jurassic granite area and Cretaceous Hwasun andesite area. Contents range of major elements for stream sediments in the Gwangju area are $SiO_2\;51.89\~70.63\;wt.\%,\;Al_2O-3\;12.91\~21.95\;wt.\%,\;Fe_2O_3\;3.22\~9.89\;wt.\%,\;K_2O\;1.85\~4.49\;wt.\%,\;MgO\;0.68\~2.90\;wt.\%,\;Na_2O\;0.48\~2.34\;wt.\%,\;CaO\;0.42\~6.72\;wt.\%,\;TiO_2\;0.53\~l.32\;wt.\%,\;P_2O_5\;0.06\~0.51\;wt.\%\;and\;MnO\;0.05\~0.69\;wt.\%.$ According to the AMF diagram for stream sediments and rocks, the stream sediments are plotted on boundary of tholeiitic series and calk alkaline series, which shows that contents of $Fe_2O_3$ are higher in stream sediments than rocks. According to variation diagram of $SiO_2$ versus $(K_2O+Na_2O),$ stream sediments are plotted on subalkaline series. Contents range of trace and rare earth elements for stream sediments in the Gwangiu area are Ba$590\~2170$ppm, Be1\~2.4$ppm, Cu$13\~79$ppm, Nb$20\~34$ppm, Ni$10\~50$ppm, Pb$17\~30$ppm, Sr$70\~1025$ ppm, V$42\~135$ppm, Zr$45\~171$ppm, Li$19\~77$ppm, Co$4.3\~19.3$ppm, Cr$28\~131$ppm, Cs$3.1\~17.6$ppm, Hf$5\~27.6$ppm, Rb$388\~202$ppm, Sb$0.2\~l.2$ ppm, Sc$6.4\~17$ppm, Zn$47\~389$ppm, Pa$8.8\~68.8$ppm, Ce$62\~272$ppm, Eu$1\~2.7$ppm and Yb$0.9\~6$ppm.

• Economic and Environmental Geology
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• v.22 no.2
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• pp.151-166
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• 1989

A study of rare-earth mineralization in Kyemyungsan metasedimentary formation of Precambrian Ogcheon Group was carried out in the Mt. Eore Area near Choongju City based on the thorium (Th) and uranium (U) count data of geophysical airborne survey. This rare-earth mineralization was found in the magnetite-bearing banded quartizite which contains diagnostically some amounts of the metamict allanite. The brown colored allanites are distributed as aggregates of fine grains and sometimes banded structures with magnetite (inter growth) along the banding. The ore bed is displaced by the small faults and granite intrusions, and separated 5 ore blocks. The dimensions of the outcrop are 50-80 m in width, 1,500 m in length with the strike of $N70-80^{\circ}E$ and dip of $50-80^{\circ}NW$. In the field, the values of total gamma ray count of GR-101A scintillometer were able to measure more than 400 cps and maximum 1,500 cps, which data are coincided with the values of GR-310 gamma ray spectrometer and the gamma ray count of well logging data. The chemical compositions of the allanites from EPMA data are ranged from$\sum^{TR_2O_3}$ 18.57% to 26.00%, and the cerium oxides ($Ce_2O_3$) of allanite are positive relation with $La_2O_3$, MgO, FeO, MnO and negative relation with $SiO_2$, $Al_2O_3$, $Nd_2O_3$. The result of Neutron Activation Analysis (N.A.A.), Multi-Channel Analysis (M.C.A.) and wet chemistry of 25 outcrop samples for the elements of REE, Zr, U, Th shows strong anomalies. The good correlation elements with the thorium (Th) are the elements of La, Ce, LREE, $TR_2O_3$, Pr, Sm, Yb, Lu by the increasing order.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.159-159
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• 2009

RF 스퍼터링법을 이용하여 유리기판위에 ZnO:Al 박막을 증착하고 다양한 조건 하에서 후 열처리를 실시하여 이에 따른 박막의 구조적, 전기적 및 광학적 특성과 HCl 습식 식각 후의 표면형상 변화를 조사하였다. ZnO:Al 투명전도막은 우수한 전기적, 광학적 특성, 수소 플라즈마 안정성 및 저 비용 등으로 실리콘 박막 태양전지 전면 전극용으로 많은 관심을 받고 있다. 기존의 비정질 실리콘 박막 태양전지용으로 많이 사용되고 있는 상용 Asahi-U형 ($SnO_2:F$) 투명전도막의 경우는 수소 플라즈마에 대한 안정성이 낮고 입사광의 장파장 대역에서의 낮은 산란특성으로 인하여 실리콘 박막 태양전지의 고효율화를 위한 적용에 한계를 나타내고 있다. 이를 개선하기 위하여 스퍼터링법으로 우수한 전기적 특성을 갖는 ZnO:Al 박막을 제조한 후 습식 식각을 통한 표면형상 변화를 통하여 입사광의 산란특성을 향상시키는 방법이 개발되어 많은 연구가 이루어지고 있다. 본 연구에서는 2.5 wt%의 $Al_2O_3$가 함유된 ZnO 타겟을 이용하여 ZnO:Al 박막을 RF 스퍼터링으로 증착한 후 $N_2$ 분위기와 진공 분위기 하에서 다양한 시간과 온도에 따라 후열처리를 하여 열처리 전 박막과의 물질 특성을 상호 비교하고 1%로 희석된 HCl로 습식 식각하여 열처리 전 박막의 구조적 특성이 습식 식각 후의 박막 표면형상 변화에 미치는 영향을 조사하였다. 이로부터 후열처리를 통한 ZnO:Al 투명전도막의 특성을 최적화하고 Asahi-U형 투명전도막과의 특성 비교를 통하여 실리콘 박막 태양전지용 전면전극으로의 적용 가능성을 조사하였다.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1244-1247
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• 2004

For obtaining the best panel quality of color filter on array(COA) architecture in TFF LCD, we investigated the influence of deposition temperature, $O_2$ flow, thickness on the optical transmittance, wet etching and adhesion properties of IZO deposited onto each color photo resist(red, green, blue). Average transmittance of the pixel single layer in the visible range(between 380 and 780nm) was mainly affected by thickness and showed maximum at 1250 ${\AA}$ while the thickness showing peak transparency in each R, G, B wavelength was different. The relation was calculated by using bi-layer transmission and reflectance model, which corresponded to experimental data very well. The adhesion of IZO deposited on each color PR was found to have enhanced value except red PR case, compared to that of IZO which was deposited on $SiN_x$. Wet etching pattern linearity was decreased as the thickness increased. The thickness of IZO was one of vital factors in order to optimize overall pixel process for fabricating COA structure.

• Journal of the Korean Society of Industry Convergence
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• v.27 no.2_2
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• pp.371-375
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• 2024

Epoxy resins are widely used in various fields due to their high adhesion, mechanical strength, and solvent resistance. However, as the volume decreases during the hardening process and the cooling process after hardening, stress is generated and when an external force is applied, the brittle material exhibits destruction behavior. To complement this, research has been conducted using inorganic nanofillers such as halloysite nanotube(HNT). HNT has a nanotube structure with the chemical formula of Al₂Si₂O₅(OH)₄·nH₂O and is a natural sediment of aluminosilicate. It has been used as additive to improve the mechanical properties of epoxy composites with exchange of amine group as a terminal functional group. In order to simplify complicated procedures of common wet method, a dry coating machine was designed and used for amine group exchange in previous research. In this study, they were applied as filler in epoxy composites, and mechanical properties such as tensile strength and flexural strength of composites were examined.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.841-845
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• 2013

We give a textured front on silicon wafer for high-efficiency solar cells by using micro contact printing method which uses PDMS (polydimethylsiloxane) silicon rubber as a stamp and SAM (self assembled monolayer)s as an ink. A random pyramidal texturing have been widely used for a front-surface texturing in low cost manufacturing line although the cell with random pyramids on front surface shows relatively low efficiency than the cell with inverted pyramids patterned by normal optical lithography. In the past two decades, the micro contact printing has been intensively studied in nano technology field for high resolution patterns on silicon wafer. However, this promising printing technique has surprisingly never applied so far to silicon based solar cell industry despite their simplicity of process and attractive aspects in terms of cost competitiveness. We employ a MHA (16-mercaptohexadecanoic acid) as an ink for Au deposited $SiO_2/Si$ substrate. The $SiO_2$ pattern which is same as the pattern printed by SAM ink on Au surface and later acts as a hard resist for anisotropic silicon etching was made by HF solution, and then inverted pyramidal pattern is formed after anisotropic wet etching. We compare three textured surface with different morphology (random texture, random pyramids and inverted pyramids) and then different geometry of inverted pyramid arrays in terms of reflectivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.912-915
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• 2004

Inductors material utilized in the downsizing passive devices and Rf components requires the physical and electrical properties at given area such as inductors thickness reduction, inductance and q-factor increase, low leakage current and thermal stability. In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of $2{\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to $60{\mu}m$ and from 20 to $70{\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.21-21
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• 2006

21세기 정보통신 및 관련 소재의 연구방향은 새로운 기능성 확보, 극한적 제어성, 복합 및 융합이라는 경향으로 발전해 가고 있다. 반도체 기술 분야에서 현재의 공정적 한계를 극복하고 새로운 기능성을 부여하기 위해 나노 합성과 배열을 기본으로 하여 bottom-up 방식의 나노소자 구현이 큰 주목을 받고 있다. 나노선의 경우 나노 스케일의 dimension, 양자 제한 효과, 우수한 결정성, self-assembly, internal stress 등 기존 벌크형 소재에서 발견할 수 없는 새로운 기능성이 나타나고 있어 바이오, 에너지, 구조, 전자, 센서 등의 분야에서의 활용이 가능하다. 현재 국내외적으로 반도체 나노선으로 널리 연구되고 있는 재료는 ZnO, $SnO_2$, SiC 등이 중심이 되고 있다. 이중 ZnO 나 노선의 합성을 위해서는 thermal CVD, MOCVD, PLD, wet-chemical 등 다양한 방법이 사용되고 있다. 특히 MOCVD 방법에 의해 수직 정렬된 ZnO 나노막대를 성장할 수 있다. 이러한 나노막대는 MO 원료 및 산소 공급량을 적절히 제어함으로서 수직 배향 및 나노선의 구경 제어가 가능하며, 나노 막대의 크기 제어와 관련해서는 반응 관내의 DEZn 와 $O_2$의 양을 변화시켜 구조체의 크기를 수 십 ~ 수 백 나노미터의 크기로 제어할 수 있다. 본 연구는 이러한 ZnO 나노선의 성장과정에서 $210^{\circ}C$ 이하의 저온에서 성장한 ZnO 버퍼층을 이용해 나노구조의 형상을 제어하고자 하였다. 특히 ZnO 저온 버퍼층의 두께에 따라 나노막대의 직경변화, 수직배향성, 형상변화의 제어가 가능하였다. 나노막대의 특성 평가는 TEM, SEM, PL, XRD 등을 이용하여 구조적, 결정학적, 광학적 특성을 분석하였다.