• E2M - 전기 전자와 첨단 소재
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• 제6권2호
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• pp.115-120
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• 1993

본 연구에서는 dry oxide와 wet oxide로 MOS capacitor를 제작하여 avalanche 전자주입 실험으로 산화막의 캐리어 트랩핑특성을 조사하였다. dry oxide에서는 avalanche 전자주입 시 전자 trapping이 주도적으로 일어났다. wet oxide에서는 주입 초기에 전자 trapping이 주도적이다가 hole trapping이 주도적으로 바뀌게 되는 turn-around 현상이 일어났다. 주입시간이 길어지면 다시 전자 trapping이 주도적으로 되는 또 한번의 turn-around 현상이 일어났다. 산화막의 트랩 parameter를 결정하기 위해 실험결과를 기초로 하여 종류가 다른 여러 트랩을 가지는 계에 대한 캐리어 트랩핑 이론식을 세워서 실험결과와 curve-fitting한 결과 실험치와 잘 일치하는 곡선을 얻었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• 한국재료학회지
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• 제12권5호
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• 한국정밀공학회지
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• 제15권9호
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• pp.145-151
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• 1998

In this study, the experimental and analytic investigation with cold air system has been performed for improving the working environment of the conventional grinding fluid. Very simple cold air system was developed which could replace by the conventional grinding fluid system. The identification of heat of grinding Bone is very important for precision grinding. The experimental data was analysed to investigate the heat which was transferred to the workpiece. It was found that 45∼55％ of the total energy for dry grinding, 22∼28％ for wet grinding, and 32∼35％ for cold air system are conducted to the workpiece in grinding with cubic boron nitride wheel. Cubic boron nitride wheel could reduce the residual stress and thermal demage comparing with aluminium oxide wheel, because cubic boron nitride wheel has very high extreme thermal conductivity.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.29-32
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• 2001

In this paper, the thermal oxidation behaviors and the electrical characteristics of the thermal oxide grown on SiC are discussed. For these studies the oxide layers with various thickness were on SiC in wet $O_2$ or dry $O_2$ at l15$0^{\circ}C$ and the MOS capacitors using the 350$\AA$ gate oxide grown in wet $O_2$ were fabricated and electrically characterized. It was found from the experimental results that the oxidation rate of SiC with the Si-face and with the carbon-face were about 10% and 50% of oxidation rate of Si. The C-V measurement results of the SiC oxide showed abnormal hysterisis properties which had ever been not observed for the Si oxide. And the hysterisis behavior was seen more significant when initial bias voltage was more negative or more positive. The hysterisis property of the SiC oxide was believed to be due the substantial amount of the deep level traps to exist at the interface between the oxide and the SiC substrate. The leakage of the SiC oxide was found to be one order larger than the Si oxide, but the breakdown strength was almost equal to that of the Si oxide.

• 한국분말재료학회지
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• 제27권4호
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• pp.305-310
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• 2020

In this study, partially dry transfer is investigated to solve the problem of fully dry transfer. Partially dry transfer is a method in which multiple layers of graphene are dry-transferred over a wet-transferred graphene layer. At a wavelength of 550 nm, the transmittance of the partially dry-transferred graphene is seen to be about 3% higher for each layer than that of the fully dry-transferred graphene. Furthermore, the sheet resistance of the partially dry-transferred graphene is relatively lower than that of the fully dry-transferred graphene, with the minimum sheet resistance being 179 Ω/sq. In addition, the fully dry-transferred graphene is easily damaged during the solution process, so that the performance of the organic photovoltaics (OPV) does not occur. In contrast, the best efficiency achievable for OPV using the partially dry-transferred graphene is 2.37% for 4 layers.

• 대한전자공학회논문지
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• 제16권1호
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• pp.26-32
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• 1979

실리콘의 dry oxidation과 wet oxidation공정의 특성을 실험적으로 조사하였다. 산화온도는1,100℃, 1.150℃, 1.200℃를 사용하였고, 산소의 유량은 0.2 liter/min으로 부터 2.8 liter/min까지 변화시켰다. 산화막의 두께를 측정하여 0.1μ ∼ 1.0μ 을 성장시키는데 필요한 온도, 시간, 산소의 유량을 도표로 나타냈다. 산화막의 특성을 조사하기 위하여 유전 상수 절연파괴 전압, fixed surface charge density (Qss/q), mobile ciarge densify (Q /q)를 측정하였다. 측정 결과로부터 산화막이 MOS transistor에도 적합한 양질이라는 결론을 얻었다.

• Corrosion Science and Technology
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• 제7권4호
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• pp.224-232
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• 2008

During the hot rolling process, steels develop an oxide scale on their surface. This scale can affect the mechanical properties of the rolled steel and its surface aspect. The main problem comes from the mechanical integrity of the oxide scales which could delaminate or crack, leading eventually to later oxide incrustation within the steel. The objective of the present work is to qualify the mechanical integrity of the iron oxide scales during the hot rolling process. The laboratory experiments use a four point bending test to simulate the mechanical solicitation which takes place during the rolling sequence of the steel slabs. The oxide scales grow on a mild steel at $900^{\circ}C$ under wet or dry atmosphere and the oxidized steel is then mecahnically tested at $900^{\circ}C$ or $700^{\circ}C$. The high temperature four point bending tests are completed with microstructural observations and with the record of acoustic emission to follow in-situ the mechanical damages of the oxide scales. The results show the role of water vapor which promotes the scale adherence, and the role of the temperature as the oxide are more damaged at $700^{\circ}C$ than at $900^{\circ}C$.

• 자원리싸이클링
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• 제11권4호
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• pp.3-10
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• 2002

핵연료 원료인 $UO_2$ 분말을 사용해 원자로에서 연소된 사용후 핵연료 소결체를 모의 제조하여 1회 산화ㆍ환원처리하여 분말로 만든 후, 건ㆍ습식 attrition 분쇄에 따른 분말의 특성 및 소결성을 조사하였다. 분쇄에 의한 분말의 평균입자크기는 건식분쇄의 경우에는 1 $mu extrm{m}$ 이하인 미분말이 쉽게 생성되었으나, 습식분쇄에서는 그 이상의 분말만이 생성되었다. 그리고 분쇄분말의 비표면적은 건식분쇄한 경우가 습식분쇄한 경우 보다 높았다. 분말의 미세구조는 건식분쇄에 의해서는 느슨한 응집체가 형성되었으며, 습식분쇄 분말은 압분성이 낮은 불규칙적이고 각진 입자형태를 나타내었다. 건식분쇄에 의해서 압분체 밀도는 크게 증가하며 소결체 요구 조건을 만족하는 이론밀도의 95%이상이 되고 평균 결정립 크기가 8 $\mu\textrm{m}$이상인 소결체를 얻을 수 있었다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.491-492
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• 2006

The horizontal high energy rotor ball mill ($Simoloyer^{(R)}$) is used to break and activate dry solids. It is used for dry-milling and in the vertical mount for wet-milling in leaching processes. Technical electric arc furnace (EAF) dust with high contents of zinc oxide, zinc ferrite and magnetite is efficiently separated by ambient temperature leaching. The process shows promise for industrial application