• Journal of Plant Biology
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• v.20 no.1
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• pp.7-14
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• 1977

The seeds of bean(Glycine max M.) and corn(Zea mays L.) soaked in 5000ppm lead solution for 24 hours were sowed in the flowerpots being placed sandy-clay soil under the field condition. The fixed concentrations of various anions and 2000 ppm lead were supplied alternately in the sandy-clay soi of the flowerpots at two days interval from May to July in 1976. After the plants were harvested prior to the flowering stage, the lead contents of plnat and soil were analyzed by atomic absorption spectrophotometer. The lead contents absorbed by the plant roots showed the highest in an weak acid soil of the best suitable condition of plant growth. The absorption of lead by the plant roots was inhibited by the various anions, especially divalent anions of the soil. Some phosphate anions inhibited lead absorption more than otehr various anions in the soil. The more various anions were in the soil, the more plants could be protected from the lead toxicity. In the case of lead supply in the soil, 99.5% of lead was accumulated in the upper layer of the soil(0-10cm), and 0.5% of lead accumulated in the lower layer (10-20cm). Therefore, the yellow-brown and white symptoms on the leaves and the inhibition of root growth by lead toxicity was increased in the early stage of the germination, however decreased in accordance with the progress of the growing stage becuase of the root growth toward beneath the lower layer of the soil. In spite of the contents of 3773ppm lead in the soil, the symptoms of lead toxicity was not found in the grown plants. At that time the lead contents of the plants absorbed from the soil were minimum 0.78ppm and maximum 3.64ppm through the growing stage.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.13 no.1
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• pp.179-192
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• 1993

Three-dimensional cohesive sediment transport model, COSETM-3, is develpoed using a finite difference method. The model results are compared with the physical experimental results for the relative concentration with time at the mid-depth of the recirculating flume and are found to be in good agreement. This model is applied to Suyoung Bay in Pusan of Korea to verify the field applicability of the model and to investigate on the SS (suspended solids) diffusion phenomena at the bay. Behaviors of discharging SS from Suyoung River at normal river flow and flood river flow are predicted. The numerical results appear to be reasonable and qualitative agreement with field data. The influence of settling velocity on the concentration distribution of SS is also investigated. In case of not considering settling velocity, SS concentration at surface layer is higher than that at lower layer, but in case of considering settling velocity, SS concentration at lower layer is higher than that at surface layer. The fluctuation of SS concentration at surface layer is large due to the strong mixing, but the fluctuation of the concentration at lower layer is small due to the weak mixing. SS diffusion patterns at flood river flow are similar to those at normal river flow, while the concentration at that flow is so much higher than that at this flow. SS concentration increases with time until the peak discharge occurs, but the concentration decreases with time with decreasing river flow after the peak discharge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.10-10
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• 2008

Silicide is inevitable for CMOSFETs to reduce RC delay by reducing the sheet resistance of gate and source/drain regions. Ni-silicide is a promising material which can be used for the 65nm CMOS technologies. Ni-silicide was proposed in order to make up for the weak points of Co-silicide and Ti-silicide, such as the high consumption of silicon and the line width limitation. Low resistivity NiSi can be formed at low temperature ($\sim500^{\circ}C$) with only one-step heat treat. Ni silicide also has less dependence of sheet resistance on line width and less consumption of silicon because of low resistivity NiSi phase. However, the low thermal stability of the Ni-silicide is a major problem for the post process implementation, such as metalization or ILD(inter layer dielectric) process, that is, it is crucial to prevent both the agglomeration of mono-silicide and its transformation into $NiSi_2$. To solve the thermal immune problem of Ni-silicide, various studies, such as capping layer and inter layer, have been worked. In this paper, the Ni-silicide utilizing Pd stacked layer (Pd/Ni/TiN) was studied for highly thermal immune nano-scale CMOSFETs technology. The proposed structure was compared with NiITiN structure and showed much better thermal stability than Ni/TiN.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.1-10
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• 2018

Recently, there has been rapid development in the field of flexible electronic devices, such as organic light emitting diodes (OLEDs), organic solar cells and flexible sensors. Encapsulation process is added to protect the flexible electronic devices from exposure to oxygen and moisture in the air. Using numerical simulation, we investigated the effects of the encapsulation layer on mechanical stability of the silicon chip, especially the fracture performance of center crack in multi-layer package for various loading condition. The multi-layer package is categorized in two type - a wide chip model in which the chip has a large width and encapsulation layer covers only the chip, and a narrow chip model in which the chip covers both the substrate and the chip with smaller width than the substrate. In the wide chip model where the external load acts directly on the chip, the encapsulation layer with high stiffness enhanced the crack resistance of the film chip as the thickness of the encapsulation layer increased regardless of loading conditions. In contrast, the encapsulation layer with high stiffness reduced the crack resistance of the film chip in the narrow chip model for the case of external tensile strain loading. This is because the external load is transferred to the chip through the encapsulation layer and the small load acts on the chip for the weak encapsulation layer in the narrow chip model. When the bending moment acts on the narrow model, thin encapsulation layer and thick encapsulation layer show the opposite results since the neutral axis is moving toward the chip with a crack and load acting on chip decreases consequently as the thickness of encapsulation layer increases. The present study is expected to provide practical design guidance to enhance the durability and fracture performance of the silicon chip in the multilayer package with encapsulation layer.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3253-3258
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• 2007

A large eddy simulation (LES) has been conducted for the flow and heat transfer in a dimpled channel. Two dimple depths of 0.2 and 0.3 times of the dimple print diameter (= D) have been compared at the bulk Reynolds number of 20,000. Three Reynolds numbers of 5,000, 10,000 and 20,000 have been studied, while the dimple depth is kept as 0.2 D. With the deeper dimple, the flow reattachment occurs father downstream inside the dimple, so that the heat transfer is not as effectively enhanced as the case with shallow ones. At the low Reynolds number of 5,000, the Nusselt number ratio is as high as those for the higher Reynolds number, although the value of heat transfer coefficient decreases because of the weak shear layer vortices.

• Bulletin of the Korean Chemical Society
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• v.25 no.7
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• pp.1031-1035
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• 2004

The adsorption kinetics of ${\beta}$-casein on a hydrophobic surface has been studied by means of the quartz crystal microbalance (QCM). The self assembled monolayer of 1-octadecanethiol on a gold coated quartz crystal was used as a hydrophobic surface for adsorption. The adsorption kinetics was monitored in different solution conditions. Formation of monolayer is observed in most cases. At high concentration of protein, micelle formation which is interrupted by high ionic strength of solution is observed. Casein binding cations such as $Ca^{2+},\;Ba^{2+}\;and\;Al^{3+}$ increase the hydrophobicity of the protein and the multiple layer adsorption occurs. The strong and weak points of the QCM method in the study of protein adsorption are discussed.

• Journal of Surface Science and Engineering
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• v.34 no.6
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• pp.537-544
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• 2001

In the present study, tin-zinc alloys were coated on a cold-rolled steel sheet with variations of electrolyte concentration, additives quantity and current density employing the Hull cell and circulation cell simulator. With an addition of additives of 2m1/L, tin-zinc deposits containing 10 to 40 percent Zn revealed a good surface appearance with weak acidic electrolytes. The organic additives suppressed the Sn deposition rate and thus increased the zinc contents in tin-zinc coating layers. The zinc contents in the tin-zinc coating layers depended almost linearly on the concentrations of metal ions of tin and zinc. Temperature of the electrolyte affected the composition tin-zinc coating layer. However, the concentration of complexants revealed little effectiveness. The surface morphology of tin-zinc coating showed dense tin and zinc phases with fine equiaxed grains with the high current density.

• Geotechnical Engineering
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• v.9 no.1
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• pp.59-68
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• 1993

In deep excavations for creation of underground spaces, it would be difficult to predict earth pressure, especially multilayered ground including rock strata. The earth pressures and displacements on the retention walls are measured by load cell, strain gauge and inclinometer which were installed at struts or anchors at 4 deep excavation sites in Seoul area. In this paper, the measured earth pressure from the struts or anchors are compared with Peck's empirical values, and the coefficient of the earth pressures for each strata and horizontal wall displacement are investigated. The coefficient of earth pressure distribution, a(0.65zka), in the flexible and the rigid walls was about 74% and 88% of Peck's value respecitively. The measured earth pressure distributions for the 4 sites showed about 70%∼80% of Peck's empirical values and the average earth pressure coefficients based on the measured data were 0.3 for the felted layer, 0.23 for the weathered rock and 0.19 for the weak rock. The maximum w리1 displacements were found to be less 0.2% of excavation depth.