• Korean Journal of Optics and Photonics
• /
• v.16 no.3
• /
• pp.196-200
• /
• 2005

A 40 channel arrayed-waveguide grating (AWG) filter operating in C-band and L-band wavelength regions has been fabricated using PLC (Planar Lightwave Circuit) processes with 0.75 refractive index difference. Its design was optimized for matching the center wavelength with the ITU-recommended wavelength. The characteristics of the fabricated C-band AWG are as follows; average insertion loss < 2.5 dB, polarization-dependent loss < 0.3 dB, non-adjacent crosstalk >35dB, and the loss uniformity of 0.8 dB. In the L-band AWG, wavelength accuracy is below 0.02nm.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.34 no.11B
• /
• pp.1207-1215
• /
• 2009

The FTTH is known as an optimal solution to provide broadband services like IPTV and the W-PON is a good alternative to implement the FTTH. It is firstly commercialized in Korea but not widely deployed because of it's high price. In this paper, we suggest a wavelength integration method to drop the price and enhance the utilization of the W-PON. The method makes one logical channel with multiple wavelengths when the W-PON system has to accommodate a signal of which transmission rate is greater than the rate of a single wavelength. Accordingly, the system can accommodate any signal rate. We introduce a frame structure, suggest synchronization and clock recovery methods, and finally show actual applications for the Ethernet and the G-PON.

• Korean Journal of Optics and Photonics
• /
• v.18 no.3
• /
• pp.185-189
• /
• 2007

A novel technology for CWDM (Coarse Wavelength Division Multiplexer) utilizing a PLC (Planar Lightwave Circuit)-AWG (Arrayed Waveguide Grating) fabrication process is proposed. BPM (Beam Propagation Method) Simulation results on the employed parabolic-horn-type input slab waveguide of AWG and the performance of the 20 nm-channel spacing CWDM with flattened passband are presented. Waveguides of $0.75{\triangle}%$ have been used in this experiment and the insertion loss at the peak wavelength is 3.5 dB for a Gaussian spectrum and is 4.8 dB for a flat-top spectrum. The bandwidth at 3 dB is better than 10 nm and 13 nm for Gaussian and flat-top spectra, respectively.

• Laser Solutions
• /
• v.18 no.1
• /
• pp.7-11
• /
• 2015

In this paper, micro trench structure is fabricated by femtosecond laser for inserting optical reflecting wavelength filter in planar waveguide. The width and depth of the trench is controlled by femtosecond laser machining condition. Also, large scale of single channel with 500um and 1000um on silica plate is fabricated by femtosecond laser, and roughness of the channel surface is polished by $CO_2$ laser for the insertion of the filter. Then, the characteristic of the planar waveguide inserted the filter is verified.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.12
• /
• pp.1058-1062
• /
• 2009

For the investigation of the mechanism of photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT), spectral characteristics of various backlights were analyzed in terms of the photon energy at each wavelength. Photon energy spectral characteristics were obtained through the multiplication of each photon energy and spectral intensities of backlights at each wavelength and the total photon energies were obtained by the integration of the photon energy spectrums. From the comparison of the experimental photo leakage current and the calculated photon energy, it was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500 nm as described in previous reports.

• Korean Journal of Optics and Photonics
• /
• v.14 no.5
• /
• pp.509-514
• /
• 2003

Mach-Zehnder interferometric wavelength converters with monolithically integrated semiconductor optical amplifiers (SOA's) have been fabricated and characteristics of wavelength conversion at 10 Gb/s have been investigated for wavelength span of 40 nm. The devices have been achieved by using a butt-joint combination of buried ridge structure type SOA's and passive waveguides. In the integration, a new method has been applied that removes p+InP cladding layer leading to high propagation loss and forms simultaneously the current blocking and the cladding layer using undoped InP. The module packaging has been achieved by using a titled fiber array for effective coupling into the tilted waveguide in the wavelength converter. Using the module, wavelength conversion with power penalty lower than 1 ㏈ at 10 Gb/s has been demonstrated for wavelength span of 40 nm. In addition, it is show that the module can provide 2R (re-amplification, re-shaping) operation by demonstrating the conversion with the negative penalty.

• Journal of Korea Multimedia Society
• /
• v.13 no.12
• /
• pp.1805-1813
• /
• 2010

In this paper, we address the issue of how to improve performance of integrated optical path and optical packet. For supporting ultra-high-speed traffic, integration of optical paths and packets in a switch is one of key techniques in New Generation Networks. However, the wavelength allocation for optical packets and optical paths has not been efficiently resolved yet because there lacks of a systematic model for evaluating performance of the integrated switch. This paper models the operation of the integrated switch as a system of two servers, one for optical paths and the other for optical packets. From the model, we utilize Newton method to find an optimal policy for sharing of wavelength resources. Afterwards, we propose an algorithm to dynamically allocate wavelength resources in an integrated switch. Finally, we evaluate performance of that algorithm.

• Korean Journal of Materials Research
• /
• v.13 no.10
• /
• pp.697-702
• /
• 2003

FT-IR and thermograph were used to investigate the infrared radiation characteristics of $SiO_2$film made by the sol-gel method. FT-IR spectrum of the $SiO_2$film showed high infrared absorption by Si-O-Si vibration at 1220, 1080, 800 and cm$460^{-1}$ The infrared absorption and radiation wavelength ranges of the $SiO_2$film measured by the integration method coincided with the reflection method, and the infrared emissivity was 0.65, equally. Depending on the bonding of elements, the infrared emissivity was high in the wavelength range where the infrared absorption rate was high, that follows the Kirchhoff's law. The emissivity showed the highest value in the wavelength range between $8∼10\mu\textrm{m}$. $SiO_2$film was considered as an efficient materials for infrared radiator at temperature below 10$0^{\circ}C$. The heat radiation temperature was $117^{\circ}C$ for the aluminum plate, but $146^{\circ}C$ for the $SiO_2$film after 7 minutes heat absorption, consiquently, $29^{\circ}C$ higher than the former.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.644-647
• /
• 2004

Optical add/drop multiplexers (OADMs), one of the new network elements, will play a key role enabling greater connectivity and flexibility in the dense wavelength-division multiplexing (DWDM) networks. The importance of OADMs is that they allow the optical network to be local transmitting/extraction on a wavelength-by-wavelength basis to optimize traffic, efficient network utilization, network growth, and to enhance network flexibility. Also, the automatic assembly system of micro optical filters and fibers is a key technology in the development of optical modules with high functionality. Recently, one of remarkable tends in the development of optical communication industry is the miniaturization and integration of products. In this research, we have developed a system capable of automatic alignment of a film filter and a lensed fiber in order to improve the speed and losses in the optical fiber to filter alignment of optical modules. Using the developed automatic alignment system and silicon optical benches, we have fabricated the micro OADM and measured the insertion loss and aging effect.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.2
• /
• pp.236-250
• /
• 2016

Electrical Designs for Application Specific Integrated Circuits (ASIC) has undergone a change recently with the advent of the sub-wavelength lithography. The optical projection with 193 nm wavelength has been further extended with the use of immersion and other techniques. The competing trends for printing smaller design features have been discussed in this paper with the discussion of the electrical layout analysis to find unfriendly design features. The early knowledge of the unfriendly design features allows remedial actions in time for better yield on the wafer. There are existing standard design qualification criteria being used in the design and fabrication community, but they seem to be insufficient to guarantee defect free designs. This paper proposes an integrated approach for screening the layout with multiple aspects: layout geometry based, graphical analysis and process model based verification. The results have been discussed with few example design features from the 28nm design layout.