• Journal of Advanced Navigation Technology
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• v.14 no.3
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• pp.426-431
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• 2010

68% of the manufacturing costs of solar cell wafer can be attributed to the slurry. The recycling of slurries is mandatory for reducing the costs of manufacturing wafering production, and the disposal of industrial waste, as well as for cutting down pollution levels. Slurries are currently being recycled using the centrifuge(decanter) method. However, this method is less than optimal as it does not completely remove the fine particles, leading to low quality. Also, be cause of the incomplete separation from the oil, it causes the impurities in the dried slurries. This study aims to develope a new recycling technology that overcomes the flaws of the centrifuge by utilizing chemicals. It will provide a total solution to the crucial process of recycling slurries in the making of solar cell wafer, by increasing the efficiency and renewable rate.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.6
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• pp.145-154
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• 2002

CMP (Chemical mechanical polishing) process was used to control the fine grinding process induced mechanical damage of Cz Silicon wafer. Characterization of mechanical damage was carried out using Nomarski microscope, magic mirror and also using angle lapping and lifetime scanner evaluation after heat treatment. Magic mirror and lifetime scanner were very useful for the residual damage pattern characterization and CMP process was effective on the reduction of fine grinding induced mechanical damage.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.59.2-59
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• 2000

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.31-32
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• 2012

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.98-101
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.88-138
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• 1996

Electronics grew up to the largest industry in the world supported by Si wafer. In near future, the Si wafer may use 300mm in diameter for economic requirement. This size wafer may use to produce large logic chip, 256Mbit DRAM, and other large complex and high density chip. Then, the quality including flatness and crustal characters may be required very high performance. And, their price should be reasonable and high quantity may be required. These requirements should be solve lot of hard problems of crystal growth, wafering mechanical processing and their cost problems. In this presentation, I may discuss following items.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.5
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• pp.2002-2008
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• 2012

In recent years, while the importance of thermal management has been emphasized due to smaller electronic products, various materials have been used as heat sink. In this study, porous ceramic heat sink was developed with SiC, successfully separated from the slurry of SiC occurring in solar energy materials industry and the thermal performance of porous SiC heat sink has been compared with those of aluminum heat sink and pure SiC heat sink through experiment. From the experimental results, it was verified that porous recycled SiC heat sink has better thermal performance than aluminum heat sink since its micropores increase the heat transfer area. In addition, the effect of the micropores on thermal performance has been quantified by increasing convective heat transfer coefficient with numerical analysis.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.2
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• pp.187-194
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• 2002

For the fine grinding process development of semiconductor monocrystalline silicon, wheel rotational speed, chuck rotational speed, feed rate and hysteresis force were controlled. Magic mirror system was used for grinding wheel pattern analysis. Curvature of wheel pattern was measured by fitting equation. The modeling of surface wheel pattern was related to wheel and chuck rotational speed. The calculated curvature of the model was well matched with the measured curvature. The statistical analysis indicated wheel and chuck rotational speed were significantly effective on.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.147-154
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• 1994

The imperfections of LiTaO3 crystals grown from the Pt-Rh and the Ir crucible were investigated with X-ray diffraction, optical and electron microscope. The growth direction was <100>h and the plane parallel to the plane connecting two main growth ridges was (012)h which would be the main cleavage plane. The dislocation density in the specimen cut parallel to (012)h plane increased with polishing time and the inverted ferroelectric microdomains were induced based on this dislocations. Such imperfections as 180$^{\circ}$ domains, microcracks, dislocations and stacking faults. could be found in the LiTaO3 crytals. The crystal contaminated with lots of Rh form Pt-Rh crucible during the crystal growing under air atmosphere contained more imperfections. The main cleavage plane and subgrain boundary parallel to its growing axis might be the main source of reducing the mechnical strength during the wafering process.