• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.80-85
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• 2019

Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.497-502
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• 2019

Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.61-66
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• 2012

Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.