• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.13-14
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• 2012

• 전자공학회논문지S
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• 제35S권6호
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• pp.55-65
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• 1998

산업현장에서는 반도체 공정의 산화막(oxidation)과 소둔(annealing) 공정에서 생산성을 향상시키기 위해 기존의 확산로(furnace)보다 RTP(rapid thermal processing) 시스템을 많이 사용하고 있다. 이러한 RTP 시스템의 주요 제어대상은 정확한 웨이퍼(wafer)의 온도조절과 웨이퍼 내의 균일성이다. 본 논문에서는 RTP 시스템의 온도변화와 같은 외란에 대한 견실안정성 문제를 해결하기 위해 하중 혼합감도함수를 이용하여 $H^{\infty}$ 제어기를 설계하고, 온도추적 및 웨이퍼 내의 균일성 등의 견실성능 개선은 루프쉐이핑 방법을 이용한다. 온도에 따른 선형화된 모델은 차수문제로 인하여 실 시스템 구현시 제약조건이 있으므로 한켈(Hankel), 자승근 균형(square-root balanced) 및 슈어 균형(Schur balanced) 방법을 사용하여 모델 차수축소를 하여 제어기를 설계한다. 원래의 모델과 축소된 모델에 대해 성능을 비교하고 시뮬레이션을 통하여 설계한 제어기의 견실안정성과 성능을 확인한다.

• 전자통신동향분석
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• 제5권1호
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• pp.55-70
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• 1990

SIMOX SOI is known to be one of the most useful technologies for fabrications of new generation ULSI devices. This paper describes the current status of SIMOX SOI technology for ULSI applications. The SIMOX wafer is vertically composed of buried oxide layer and silicon epitaxial layer on top of the silicon substrate. The buried oxide layer is used for the vertical isolation of devices The oxide layer is formed by high energy ion implantation of high dose oxygen into the silicon wafer, followed by high temperature annealing. SIMOX-based CMOS fabrication is transparent to the conventional IC processing steps without well formation. Furthermore, thin film CMOX/SIMOX can overcome the technological limitations which encountered in submicron bulk-based CMOS devices, i.e., soft-error rate, subthreshold slope, threshold voltage roll-off, and hot electron degradation can be improved. SIMOX-based bipolar devices are expected to have high density which comparable to the CMOX circuits. Radiation hardness properties of SIMOX SOI extend its application fields to space and military devices, since military ICs should be operational in radiation-hardened and harsh environments. The cost of SIMOX wafer preparation is high at present, but it is expected to reduce as volume increases. Recent studies about SIMOX SOI technology have demonstrated that the performance of the SIMOX-based submicron devices is superior to the circuits using the bulk silicon.

• 대한산업공학회지
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• 제41권6호
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• pp.579-587
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• 2015

Semiconductor manufacturing industry is a high density integration industry because it generates a vest number of data that takes about 300~400 processes that is supervised by numerous production parameters. It is asked of engineers to understand the correlation between different stages of the manufacturing process which is crucial in reducing production costs. With complex manufacturing processes, and defect processing time being the main cause. In the past, it was possible to grasp the corelation among manufacturing process stages through the engineer's domain knowledge. However, It is impossible to understand the corelation among manufacturing processes nowadays due to high density integration in current semiconductor manufacturing. in this paper we propose a canonical correlation analysis (CCA) using both wafer test voltage variables and fail bit counts variables. using the method we suggested, we can increase the semiconductor yield which is the result of the package test.

• 정보처리학회논문지D
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• 제11D권2호
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• pp.461-470
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• 2004

반도체 업계에서는 200mm 반도체 웨이퍼 생산공정이 300mm 웨이퍼 생산공정으로 바뀜에 따라, 300mm 반도체 웨이퍼를 이동시키는 로봇을 모니터링하고 시뮬레이션하기 위한 소프트웨어 개발이 필요하다. 이런 소프트웨어는 독립적으로 동작하는 것이 아니라 MCS와 하위 시스템인 로봇과 통신하면서 실행되어야 하므로, 그 구성이 복잡하다. 그러므로, 이 시스템을 체계적으로 개발하기 위해서는 객체지향 개발 방법론인 UML을 적용할 필요성이 있다. 본 논문은 반도체 웨이퍼를 생산공정에서 이동시키는 로봇을 모니터링하고 시뮬레이션하기 위한 소프트웨어 개발에 UML 프로세스를 적용하였다. UML을 적용하여 UML을 기반으로 한 개발 프로세스 정의와 개발 단계별 업무들에 대한 구체적인 산출물들을 만들어 내었다.

• 한국정밀공학회지
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• 제11권1호
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• pp.150-156
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• 1994

To meet the process requirement of semiconductor device manufacturing, it is necessary to improve the alignment accuracy in exposure equipments. We developed the excimer laser stepper and will describe the methodology for alignment measurement and experimental results. Our wafer alignment system consists of off-axis optics, TTL(Through The Lens) optics and high precision stage. Off-axis alignment utilizes the image processing and /or diffraction from thealign marks of off-centered chip area. On the other hand, TTL alignment can be used for the die-by-die alignment using dual beam interferometry. When only off-axis alignment was used, the experimental alignment error(lml+3 .sigma. ) was 0.26-0.29 .mu. m, and will be reduced down to 0.15 .mu. m by adding TTL alignment.

• 한국기계가공학회지
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• 제15권1호
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• pp.26-33
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• 2016

In this study, a new method to develop a fixed diamond wire for silicon wafer machining by the multi-wire cutting method was developed. The new twist diamond wire has improved performance with high breaking strength and chip flutes structure. According to these characteristics, the new twist diamond wire can be used in the higher speed multi-wire cutting process with a long lifetime. Except the design of the new structure, the twist diamond wire is coating by electroless-electroplating process. It is good for reducing breakage and the falling-off of diamond grains. Based on the silicon material removal mechanism and performance of the wire-cutting machine, the optimal processing condition of the new twist diamond wire has been derived via mathematical analysis. At last, through the tensile testing and the machining experiments, the performance of the twist diamond wire has been obtained to achieve the development goals and exceed the single diamond wire.

• 한국정밀공학회지
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• 제30권11호
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• pp.1193-1201
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• 2013

Improved far field type(improved type) megasonic applicable to the cleaning equipment of single wafer processing type has been developed. In this study, to improve the uniformity of acoustic pressure distribution(APD), we utilize far field with relatively uniform APD, piezoelectric ceramic with a triangle hole in its center to prevent standing wave resulted from radial mode, and reflected wave from the wall of waveguide. On the basis of these methods, two analysis models of improved type were designed to which piezoelectric ceramic of different shape of electrode attached, and APD were analyzed by means of finite element method, and then one of them was selected by analysis results, finally, the selected model was fabricated. Test results show that the fabricated is better in the uniformity of APD than the imported and the conventional, also the fabricated shows high particle removal efficiency of 92.3% using DI water alone as a cleaning solution.

• Tribology and Lubricants
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• 제34권3호
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• pp.115-122
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• 2018

Chemical mechanical polishing (CMP) is a hybrid processing method in which the surface of a wafer is planarized by chemical and mechanical material removal. Since mechanical material removal in CMP is caused by the rolling or sliding of abrasive particles, interfacial friction during processing greatly influences the CMP results. In this paper, the trend of tribology research on CMP process is discussed. First, various friction force monitoring methods are introduced, and three elements in the CMP tribo-system are defined based on the material removal mechanism of the CMP process. Tribological studies on the CMP process include studies of interfacial friction due to changes in consumables such as slurry and polishing pad, modeling of material removal rate using contact mechanics, and stick-slip friction and scratches. The real area of contact (RCA) between the polishing pad and wafer also has a significant influence on the polishing result in the CMP process, and many researchers have studied RCA control and prediction. Despite the fact that the CMP process is a hybrid process using chemical reactions and mechanical material removal, tribological studies to date have yet to clarify the effects of chemical reactions on interfacial friction. In addition, it is necessary to clarify the relationship between the interface friction phenomenon and physical surface defects in CMP, and the cause of their occurrence.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2006년도 추계학술발표대회 논문집
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• pp.41-45
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• 2006

Auto focusing system to find optimized focal position of laser beam used for material process has been investigated by using fiber confocal method. Wavelength of laser diode (LD) and diameter of single-mode fiber we 780nm and $5.3{\mu}m$, respectively. Intensity distributions of beam reflected from the surface of mirror and silicon bare wafer have been observed in a gaussian form. Experimental results show that focal position obtained by LD is shifted from one observed from surface scribed by laser about $80{\mu}m$. It is due to the difference of wavelength and each divergence of between LD and laser used for material process. It is confirmed that auto focusing control system through position calibration has operated steadily.