• 제목/요약/키워드: Wafer map image

검색결과 3건 처리시간 0.015초

반도체 공정에서의 Wafer Map Image 분석 방법론 (Wafer Map Image Analysis Methods in Semiconductor Manufacturing System)

  • 유영지;안대웅;박승환;백준걸
    • 대한산업공학회지
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    • 제41권3호
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    • pp.267-274
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    • 2015
  • In the semiconductor manufacturing post-FAB process, predicting a package test result accurately in the wafer testing phase is a key element to ensure the competitiveness of companies. The prediction of package test can reduce unnecessary inspection time and expense. However, an analysing method is not sufficient to analyze data collected at wafer testing phase. Therefore, many companies have been using a summary information such as a mean, weighted sum and variance, and the summarized data reduces a prediction accuracy. In the paper, we propose an analysis method for Wafer Map Image collected at wafer testing process and conduct an experiment using real data.

Study on Distortion Compensation of Underwater Archaeological Images Acquired through a Fisheye Lens and Practical Suggestions for Underwater Photography - A Case of Taean Mado Shipwreck No. 1 and No. 2 -

  • Jung, Young-Hwa;Kim, Gyuho;Yoo, Woo Sik
    • 보존과학회지
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    • 제37권4호
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    • pp.312-321
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    • 2021
  • Underwater archaeology relies heavily on photography and video image recording during surveillances and excavations like ordinary archaeological studies on land. All underwater images suffer poor image quality and distortions due to poor visibility, low contrast and blur, caused by differences in refractive indices of water and air, properties of selected lenses and shapes of viewports. In the Yellow Sea (between mainland China and the Korean peninsula), the visibility underwater is far less than 1 m, typically in the range of 30 cm to 50 cm, on even a clear day, due to very high turbidity. For photographing 1 m x 1 m grids underwater, a very wide view angle (180°) fisheye lens with an 8 mm focal length is intentionally used despite unwanted severe barrel-shaped image distortion, even with a dome port camera housing. It is very difficult to map wide underwater archaeological excavation sites by combining severely distorted images. Development of practical compensation methods for distorted underwater images acquired through the fisheye lens is strongly desired. In this study, the source of image distortion in underwater photography is investigated. We have identified the source of image distortion as the mismatching, in optical axis and focal points, between dome port housing and fisheye lens. A practical image distortion compensation method, using customized image processing software, was explored and verified using archived underwater excavation images for effectiveness in underwater archaeological applications. To minimize unusable area due to severe distortion after distortion compensation, practical underwater photography guidelines are suggested.

Properties of Defective Regions Observed by Photoluminescence Imaging for GaN-Based Light-Emitting Diode Epi-Wafers

  • Kim, Jongseok;Kim, HyungTae;Kim, Seungtaek;Jeong, Hoon;Cho, In-Sung;Noh, Min Soo;Jung, Hyundon;Jin, Kyung Chan
    • Journal of the Optical Society of Korea
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    • 제19권6호
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    • pp.687-694
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    • 2015
  • A photoluminescence (PL) imaging method using a vision camera was employed to inspect InGaN/GaN quantum-well light-emitting diode (LED) epi-wafers. The PL image revealed dark spot defective regions (DSDRs) as well as a spatial map of integrated PL intensity of the epi-wafer. The Shockley-Read-Hall (SRH) nonradiative recombination coefficient increased with the size of the DSDRs. The high nonradiative recombination rates of the DSDRs resulted in degradation of the optical properties of the LED chips fabricated at the defective regions. Abnormal current-voltage characteristics with large forward leakages were also observed for LED chips with DSDRs, which could be due to parallel resistances bypassing the junction and/or tunneling through defects in the active region. It was found that the SRH nonradiative recombination process was dominant in the voltage range where the forward leakage by tunneling was observed. The results indicated that the DSDRs observed by PL imaging of LED epi-wafers were high density SRH nonradiative recombination centers which could affect the optical and electrical properties of the LED chips, and PL imaging can be an inspection method for evaluation of the epi-wafers and estimation of properties of the LED chips before fabrication.