• 제목/요약/키워드: Wafer level molding

검색결과 17건 처리시간 0.023초

열경화성 수지 재료를 이용한 광학 렌즈 제조공정에서 렌즈 변형에 대한 수축률이 영향에 관한 연구 (A Study on the Effect of Shrinkage on Lens Deformation in Optical Lens Manufacturing Process Using Thermosetting Resin Material)

  • 박시환
    • Design & Manufacturing
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    • 제16권3호
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    • pp.9-15
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    • 2022
  • In order to reduce the manufacturing costs of the glass lens, it is necessary to manufacture a lens using a UV curable resin or a thermosetting resin, which is a curable material, in order to replace a glass lens. In the case of forming a lens using a thermosetting material, it is necessary to form several lenses at once using the wafer-level lens manufacturing technologies due to the long curing time of the material. When a lens is manufactured using a curable material, an error in the shape of the lens due to the shrinkage of the material during the curing process is an important cause of defects. The major factors for these shape errors and deformations are the shrinkage and the change of mechanical properties in the process of changing from a liquid material during curing to a solid state after complete curing. Therefore, it is necessary to understand the curing process of the material and to examine the shrinkage rate and change of physical properties according to the degree cure. In addition, it is necessary to proceed with CAE for lens molding using these and to review problems in lens manufacturing in advance. In this study, the viscoelastic properties of the material were measured during the curing process using a rheometer. Using the results, Rheological investigation of cure kinetics was performed. At the same time, The shrinkage of the material was measured and simple mathematical models were created. And using the results, the molding process of a single lens was analyzed using Comsol, a commercial S/W. In addition, the experiment was conducted to compare and verify the CAE results. As a result, it was confirmed that the shrinkage rate of the material had a great influence on the shape precision of the final product.

300mm 대구경 웨이퍼의 다이 시프트 측정 (Die Shift Measurement of 300mm Large Diameter Wafer)

  • 이재향;이혜진;박성준
    • 한국산학기술학회논문지
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    • 제17권6호
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    • pp.708-714
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    • 2016
  • 오늘날 반도체 분야의 산업에서는 데이터 처리 속도가 빠르고 대용량 데이터 처리 수행 능력을 갖는 반도체 기술 개발이 활발히 진행 되고 있다. 반도체 제작에서 패키징 공정은 칩을 외부 환경으로부터 보호 하고 접속 단자 간 전력을 공급하기 위해 진행하는 공정이다. 근래에는 생산성이 높은 웨이퍼 레벨 패키지 공정이 주로 사용되고 있다. 웨이퍼 레벨 패키지 공정에서 웨이퍼 상의 모든 실리콘 다이는 몰딩 공정 중에 높은 몰딩 압력과 고온의 열 영향을 받는다. 실리콘 다이에 작용하는 몰딩 압력 및 열 영향은 다이 시프트 및 웨이퍼 휨 현상을 초래하며, 이러한 다이 시프트 및 웨이퍼 휨 현상은 후속 공정으로 칩 하부에 구리 배선 제작을 하는데 있어 배선 위치 정밀도의 문제를 발생시킨다. 따라서 본 연구에서는 다이 시프트 최소화를 위한 공정 개발을 목적 으로 다이 시프트 측정 데이터를 수집하기 위해 다이 시프트 비전 검사 장비를 구축하였다.

IoT 적용을 위한 다종 소자 전자패키징 기술 (Heterogeneous Device Packaging Technology for the Internet of Things Applications)

  • 김사라은경
    • 마이크로전자및패키징학회지
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    • 제23권3호
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    • pp.1-6
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    • 2016
  • IoT 적용을 위해서는 다종 소자를 높은 connectivity 밀도로 집적화시키는 전자패키징 기술이 매우 중요하다. FOWLP 기술은 입출력 밀도가 높고, 소자의 집적화가 우수하고, 디자인 유연성이 우수하여, 최근 개발이 집중되고 있는 기술이다. 웨이퍼나 패널 기반의 FOWLP 기술은 초미세 피치 RDL 공정 기술과 몰딩 기술 개발이 최적화 되어야 할 것이다. 3D stacking 기술 특히 웨이퍼 본딩 후 TSV를 제조하는 방법(via after bonding)은 가격을 낮추면서 connectivity를 높이는데 매우 효과적이라 하겠다. 하지만 저온 웨이퍼 본딩이나 TSV etch stop 공정과 같이 아직 해결해야할 단위 공정들이 있다. Substrate 기술은 두께를 줄이고 가격을 낮추는 공정 개발이 계속 주목되겠지만, 칩과 PCB와의 통합설계(co-design)가 더욱 중요하게 될 것이다.

경화제 변화에 따른 WLP(Wafer Level Package)용 신규 Epoxy Resin System의 경화특성 (Cure Properties of Novel Epoxy Resin Systems for WLP (Wafer Level Package) According to the Change of Hardeners)

  • 김환건
    • 반도체디스플레이기술학회지
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    • 제21권2호
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    • pp.57-67
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    • 2022
  • The curing characteristics of naphthalene type epoxy resin systems according to the change of curing agent were investigated to develop a new next-generation EMC(Epoxy Molding Compound) with excellent warpage characteristics, low thermal expansion, and excellent fluidity for WLP(Wafer Level Package). As epoxy resins, DGEBA, which are representative bisphenol type epoxy resins, NE-16, which are the base resins of naphthalene type epoxy resins, and NET-OH, NET-MA, and NET-Epoxy resins newly synthesized based on NE-16 were used. As a curing agent, DDM (Diamino Diphenyl Methane) and CBN resin with naphthalene moiety were used. The curing reaction characteristics of these epoxy resin systems with curing agents were analyzed through thermal analysis experiments. In terms of curing reaction mechanism, DGEBA and NET-OH resin systems follow the nth curing reaction mechanism, and NE-16, NET-MA and NET-Epoxy resin systems follow the autocatalytic curing reaction mechanism in the case of epoxy resin systems using DDM as curing agent. On the other hand, it was found that all of them showed the nth curing reaction mechanism in the case of epoxy resin systems using CBN as the curing agent. Comparing the curing reaction rate, the epoxy resin systems using CBN as the curing agent showed a faster curing reaction rate than them with DDM as a hardener in the case of DGEBA and NET-OH epoxy resin systems following the same nth curing reaction mechanism, and the epoxy resin systems with a different curing mechanism using CBN as a curing agent showed a faster curing reaction rate than DDM hardener systems except for the NE-16 epoxy resin system. These reasons were comparatively explained using the reaction rate parameters obtained through thermal analysis experiments. Based on these results, low thermal expansion, warpage reduction, and curing reaction rate in the epoxy resin systems can be improved by using CBN curing agent with a naphthalene moiety.

몰드 두께에 의한 팬 아웃 웨이퍼 레벨 패키지의 Warpage 분석 (Analysis of Warpage of Fan-out Wafer Level Package According to Molding Process Thickness)

  • 문승준;김재경;전의식
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.124-130
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    • 2023
  • Recently, fan out wafer level packaging, which enables high integration, miniaturization, and low cost, is being rapidly applied in the semiconductor industry. In particular, FOWLP is attracting attention in the mobile and Internet of Things fields, and is recognized as a core technology that will lead to technological advancements such as 5G, self-driving cars, and artificial intelligence in the future. However, as chip density and package size within the package increase, FOWLP warpage is emerging as a major problem. These problems have a direct impact on the reliability and electrical performance of semiconductor products, and in particular, cause defects such as vacuum leakage in the manufacturing process or lack of focus in the photolithography process, so technical demands for solving them are increasing. In this paper, warpage simulation according to the thickness of FOWLP material was performed using finite element analysis. The thickness range was based on the history of similar packages, and as a factor causing warpage, the curing temperature of the materials undergoing the curing process was applied and the difference in deformation due to the difference in thermal expansion coefficient between materials was used. At this time, the stacking order was reflected to reproduce warpage behavior similar to reality. After performing finite element analysis, the influence of each variable on causing warpage was defined, and based on this, it was confirmed that warpage was controlled as intended through design modifications.

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열경화성 소재를 사용한 웨이퍼 레벨 렌즈 성형 중 이형 특성에 관한 연구 (A Study on the Release Characteristics During Wafer-Level Lens Molding Using Thermosetting Materials)

  • 박시환;황연;김대근
    • 한국산학기술학회논문지
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    • 제22권1호
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    • pp.461-467
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    • 2021
  • 열경화성 소재를 이용하여 열경화방식의 웨이퍼 레벨 렌즈를 성형할 때 발생될 수 있는 불량요인 중 이형과정에서 성형 렌즈의 금형 고착문제는 웨이퍼 레벨에서 성형된 기판의 파손 및 기판의 변형으로 성형된 웨이퍼 기판의 적층시 웨이퍼 양면의 렌즈 형상 및 센터 정렬 오차에 영향을 미친다. 본 연구에서는 웨이퍼 레벨 렌즈 성형 공정에서 이형력에 영향을 미치는 인자를 검토하기 위한 실험을 수행하였다. 먼저 상·하 금형의 코팅 재질에 따른 이형력을 검토하기 위하여 금형 표면을 ITO 및 Ti로 표면처리 후 O2분위기에서 플라즈마 처리하였고, 또한 DLC 코팅도 진행하였으며 경화 및 이형성을 검토하였다. 그 결과를 바탕으로 pull-off 실험을 위한 코팅방법을 선정하였다. 또한 경화공정조건에 따른 이형력을 측정하기 위하여 압력을 유지하면서 경화시키는 방법과 일정한 간격을 유지하면서 경화시키는 방법을 실험적으로 적용하였다. 그 결과 Ti 코팅 후 O2 플라즈마 표면처리 방법이 이형력을 감소시키고 위치를 제어하면서 경화시킬 경우 경화수축에 의해 경화 중 계면의 접착에너지를 감소시켜 보다 나은 이형이 될 수 있음을 확인하였다.

FOWLP 구조의 영향 인자에 따른 휨 현상 해석 연구 (A Study of Warpage Analysis According to Influence Factors in FOWLP Structure)

  • 정청하;서원;김구성
    • 반도체디스플레이기술학회지
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    • 제17권4호
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    • pp.42-45
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    • 2018
  • As The semiconductor decrease from 10 nanometer to 7 nanometer, It is suggested that "More than Moore" is needed to follow Moore's Law, which has been a guide for the semiconductor industry. Fan-Out Wafer Level Package(FOWLP) is considered as the key to "More than Moore" to lead the next generation in semiconductors, and the reasons are as follows. the fan-out WLP does not require a substrate, unlike conventional wire bonding and flip-chip bonding packages. As a result, the thickness of the package reduces, and the interconnection becomes shorter. It is easy to increase the number of I / Os and apply it to the multi-layered 3D package. However, FOWLP has many issues that need to be resolved in order for mass production to become feasible. One of the most critical problem is the warpage problem in a process. Due to the nature of the FOWLP structure, the RDL is wired to multiple layers. The warpage problem arises when a new RDL layer is created. It occurs because the solder ball reflow process is exposed to high temperatures for long periods of time, which may cause cracks inside the package. For this reason, we have studied warpage in the FOWLP structure using commercial simulation software through the implementation of the reflow process. Simulation was performed to reproduce the experiment of products of molding compound company. Young's modulus and poisson's ratio were found to be influenced by the order of influence of the factors affecting the distortion. We confirmed that the lower young's modulus and poisson's ratio, the lower warpage.