• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.334.1-334.1
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• 2016

다른 재료에 비해 에너지 변환 효율의 관점에서 높은 경쟁력을 가진 결정질 실리콘은 지난 수십 년 동안 그 특성이 태양전지 분야에 널리 이용되어 왔다. 하지만 결정질 실리콘 웨이퍼는 일반적으로 제조 단계에서 많은 양의 에너지를 소비하고 절단 단계에서 절단 손실(Kerf-loss)이 발생된다. Epoxy Resin을 이용한 Kerf-less Wafering은 초박형 실리콘 웨이퍼 제조 기술 중 하나로, 비교적 간단한 장비와 공정을 통하여 절단 손실 없이 $50{\mu}m$이하의 초박형 실리콘 웨이퍼를 얻을 수 있는 기술이다. 실리콘과 Epoxy Resin 간의 열팽창 계수 차이를 이용하여 초박형 실리콘을 박리 시키는 기술로, 실리콘 기판 위에 Epoxy Resin으로 stress inducing layer를 올려 공정을 진행한다. stress inducing layer를 경화시키는 열처리가 끝나고 급냉되는 과정에서 stress inducing layer에 의해 실리콘 기판에 큰 응력이 가해지게 되고 실리콘 기판에 crack이 발생된다. 공정이 계속 됨에 따라 발생된 crack은 실리콘 표면과 평행한 방향으로 전파 되고 초박형 실리콘 layer가 실리콘 기판에서 박리 된다. 본 실험에서 중요한 공정 변수로는 stress inducing layer의 구성성분 및 두께, 열처리 온도 및 시간, cooling rate 등이 있다. 이러한 공정 변수들을 조절 하여 Epoxy Resin을 이용하여 $100{\mu}m$ 이하의 박리된 wafer를 얻을 수 있었다. 박리된 wafer의 단면과 두께를 Scanning Electron Microscopy(SEM)을 통해 관찰 하였고, 이를 통해 초박형 실리콘 박리 공정에 대한 연구를 진행하였다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.12
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• pp.1844-1852
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• 2001

Recent developments in microfluidic devices based on microelectromechanical systems (MEMS) technique find many practical applications, which include electronic chip cooling devices, power MEMS devices, micro sensors, and bio-medical devices among others. For the design of such micro devices, flows characteristics inside a microchannel have to be clarified which exhibit somewhat different characteristics compared to conventional flows in a macrochannel. In the present study microchannels of various hydraulic diameters are fabricated on a silicon wafer to study the pressure drop characteristics. The effect of abrupt contraction and expansion is also studied. It is found from the results that the friction factor in a straight microchannel is about 15% higher than that in a conventional macrochannel, and the loss coefficients in abrupt expansion and contraction are about 10% higher than that obtained through conventional flow analysis.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.132-137
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• 2006

With the help of the development of digital-multimedia in the middle of 1990's, FDP(Flat Panel Display) had attracted considerable attention. Collimation proximity exposure system that transfers the pattern on wafer or glass exactly using mask and light with appropriate wavelength is core process in semiconductor and liquid display element. The performances of resolution required in precision exposure system are evaluated by resolving power, depth of focus and storage area. Most of development has targeted on these three factors. The optical design including lamp house has played an important role on the performance of exposure process. In this study, we evaluate the cooling system, concerning on exposure device with mercury lamp among the kernel equipment for the production of LCD, to prevent the instability of lighting due to long term accumulation of excessive heating inside the lamp house. Numerical analysis is conducted on full-scale model. The characteristics of three-dimensional flow, pressure and temperature distribution on exposure system are graphically depicted to estimate the whole cooling system for lamp house and to establish the design criteria.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.27-33
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• 2005

Polishing pads play an important role in chemical mechanical polishing(CMP) which has recently been recognized at the most effective method to achieve global planarization. In this paper, we have investigated CMP characteristics as a change of groove density of polishing pads. The parameter $(K_n)$ is proposed to estimate groove density of pad. The $K_n$ is defined as groove area divided by pitch area. As the groove density value increased, removal rate increased to some point and then gradually saturated in case of increasing the groove density excessively. In addition Within wafer non-uniformity(WIWNU) worse as groove density increased excessively, although WIWNU improved as groove density increased. Also the uniformity of temperature of pad surface decreased as the groove density increased. It was because that the cooling effect increased as groove density increased. In other words, increasing the groove density which means the apparent contact area of pad has influence on amount of discharge of slurry during polishing process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.10a
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• pp.294-297
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• 2004

RTP(Rapid Thermal Pressing) is to fabricate desired pattern on polymer substrate by pressing patterned mold against the substrate heated around glass transition temperature. For a successful RTP process, the whole process including heating, molding, cooling and demolding should be conducted 'rapidly' as possible. As the RTP process is effective in replicating patterns on flat large surface without causing shape distortion after cooling, it is being widely used for fabricating various micro/bio application components, especially with channel-type microstructures on surface. This investigation finally aims to develop a RTP process machine for mass-producing micro/bio application components. As a first step for that purpose, we intended to examine the technological difficulties for realizing mass production by RTP process. Therefore, in the current paper, 4 kinds of RTP machines were examined and then the RTP process was conducted experimentally for PMMA film by using one of the machines, HEX 03. The micro-patterned molds used for RTP experiment was fabricated from silicon wafer by semi-conduct process. The replicated micro patterns on PMMA films were examined using SEM and the causes of defect observed in the replicated patterns were discussed.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1881-1883
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• 2001

We manufactured a micro CPL by LlGA process, a new conceptual ultra-fine and precise forming method, using X-ray lithography process. We fabricated a BN X-ray mask having properties of good X-ray transmittance and large mechanical strength. Micro CPL was manufactured by dividing into an upper plate and a low plate. Each of plates was bonded by Ag paste screen printing. The upper plate was fabricated on glass wafer to observe flow and phase transformation of cooling solution. The lower plate was manufactured by Cu electroplating for good heat transmission. Precision of inner Parts, micro pin and micro channel, of manufactured micro CPL is under ${\pm}2{\mu}m$.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.83-90
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• 2014

This paper is about the yield rate of lower temperature furnace for wafer heat-treatment. The flat-zone that the temperature in furnace has uniform distribution specific area is the significant variable to the yield rate. In this study, we researched about the ways how to widen the flat zone in the furnace using CFD. As a result, we confirmed that the characteristic of the flat-zone was changed when SCU(Super Cooling Unit) was used. We considered temperature control with above.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.116-120
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• 2006

We have investigated plasma spray coated $Al_2O_3$ layers on Al-60 series substrates for development of wafer electrostatic chuck in semiconductor dry etching system. Samples were prepared without/with cooling bar on backside of samples, at various distances, and with different powder feed rates. There were many cracks and pores in the $Al_2O_3$ layers coated on Al-60 series substrates without cooling bar on the backside of samples. But the cracks and pores were almost disappeared in the $Al_2O_3$ layers on Al-60 series substrates coated with cooling bar on the back side of samples, 15 g/min. powder feed rate and various 60, 70, 80 mm working distances. Then the surface morphology was not changed with various working distances of 60, 70, 80 mm. When the powder feed rate was changed from 15 g/min to 20 g/min, the crack did not appear, but few pores appeared. Also the $Al_2O_3$ layer was coated with many small splats compared with $Al_2O_3$ layer coated with 15 g/min powder feed rate. The deposited rate of $Al_2O_3$ layer was higher when the process was done without cooling bar on the back side of sample than that with cooling bar on the back side of sample.

• Design & Manufacturing
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• v.10 no.1
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• pp.19-25
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• 2016

Connectors are very important components that transmit electric signals to different parts. It must maintain intensity of the connector to prevent defects from impact and maintain contact to transmit electric signals. Most of the external parts of the connector, which act as the main framework, are formed by injection molding. However, bend deformation occurs for injection molded products due to the residual stress left inside the product after product molding. When the bend deformation is large, it does not come into complete contact when being assembled with other parts, which leads to connector contact intensity not being properly maintained. In result, the main role of the connector, which is to transmit electric signals, cannot be performed. In order to address this problem, this study conducted bend deformation cause analysis through bend deformation analysis to predict and prevent bend deformation of housings and wafers, which are injection molded products of pressure welded connectors that are normally applied in compact mobile and display products. Bend deformation analysis was carried out by checking the charging time, pressure distribution and temperature distribution through wire to board connector wafer and housing injection molding analysis. Based on the results of the bend deformation analysis results, the cause of the bend deformation was analyzed through deformation resulting from disproportional cooling, deformation resulting from disproportional contraction, and deformation resulting from ingredient orientation. In result, it was judged that the effects for bend deformation were biggest due to disproportional contraction for both the pressure welded connector wafer and housing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.68-72
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• 2003

In this paper, we developed a new thick photoresist fabrication technology for 3-dimensional microstructures. In general, like as AZ photoresist was coated with thin film thickness about 1 $\mu\textrm{m}$ to 30 $\mu\textrm{m}$, but photoresist like SU-8 has thickness of several tens $\mu\textrm{m}$ or more and high aspect ratio. When we fabricate a microstructure using the thick photoresist like SU-8, cracks on the SU-8 thick photoresist are appeared by stress which was caused by sudden cooling down during bake of the thick photoresist spun on wafer. Thus, it was hard to fabricate the microstructure using the thick photoresist for electroplating. In this paper, we developed a new process to produce a 3-dimensional microstructure without the crack by stress through a suitable thick photoresist coating, time control of cool down and time control of PEB (Post Expose Bake).