• Applied Chemistry for Engineering
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• v.34 no.5
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• pp.522-528
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• 2023

In this work, adhesive tapes were prepared for the dicing process in semiconductor manufacturing. Compounds with different numbers of photoreactive groups (f = 1 to 3) were synthesized and incorporated into acrylic copolymers to formulate UV-curable acrylic adhesives. Structural confirmation of the synthesized photoreactive compounds (f = 2 or 3) was performed using nuclear magnetic resonance (NMR) spectroscopy. The introduction of the photoreactive compounds into the acrylic adhesive was accomplished by urethane reactions, and the successful synthesis of the UV-curable acrylic adhesive was verified by Fourier transform infrared (FT-IR) measurements. To evaluate the performance of the adhesive, the peel strength was evaluated before and after UV irradiation using a silicon wafer as a substrate. The adhesive exhibited high peel strength (~2000 gf/25 mm) before UV exposure, which was significantly reduced (~5 gf/25 mm) after UV exposure. Interestingly, the adhesive containing multifunctional photoreactive compounds showed the most significant reduction in peel strength. In addition, surface residue measurements by field emission scanning electron microscopy (FE-SEM) showed minimal surface residue (~0.2%) after UV exposure. Overall, these results contribute to the understanding of the behavior of UV-curable acrylic adhesives and pave the way for potential applications in semiconductor manufacturing processes.

• Journal of Oral Medicine and Pain
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• v.30 no.4
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• pp.411-426
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• 2005

The purpose of this study was to investigate the effects of occlusal condition and clenching level on the mandibular torque rotational movement. For this study, healthy 14 men without any symptoms and signs of temporomandibular disorders were selected. Mandibular torque rotational movement was observed in each circumstance of combination of three occlusal conditions such as natural dentition, with wafer of 3.6 mm thickness, and wafer with resin stop of 14 mm thickness total during hard biting of bite stick at maximum voluntary contraction(MVC) and 50% of MVC level of surface EMG activity of masseter muscle. Electromyographic activity and mandibular torque rotational movement were observed using BioEMG and BioEGN in $BioPak^{(R)}$ system. Each biting movement in each circumstance was composed of clenching one time and hard biting of wooden stick two times. The observed items were opening distance, velocity and amount of torque rotational movement in mandibular movement, and the data were statistically processed with $SPSS^{(R)}$ windows (ver.10.0). The results of this study were as follows: 1. There were no differences in the mandibular movement distance between those value in both biting sides, and between those in both clenching forces, but the mandibular velocity showed a different results by clenching force. For the amount of torque rotational movement, there were no difference in the value of the frontal plane but some significant difference was in the value of the horizontal plane by biting side. 2. The mandibular movement distance and the mandibular velocity in both planes were higher by maximum voluntary contraction than those by half maximum voluntary contraction, and amount of torque rotational movement in the horizontal plane was also increased by maximum voluntary contraction. 3. The opening distance in both planes were decreased with the increase of vertical dimension of occlusion, namely, by the occlusal appliances, and this pattern was also showed in the mandibular velocity in case of hard biting by maximum voluntary contraction. However, the amount of torque rotational movement were not different by the increase of vertical dimension of occlusion. 4. The value of angle and distance of the torque rotational movement in the hard biting of wooden stick were generally higher than those in the clenching without wooden stick in both planes without regard to occlusal conditions and/or clenching forces.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Applied Chemistry for Engineering
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• v.10 no.5
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• pp.644-651
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• 1999

In this experiment the Iron phthalocyanine (FePc) films on Si-wafer and alumina pallet were prepared using vacuum sublimation with conditions of changing reaction time, temperature, and deposition rate. Then, some samples were annealed following annealing. Techniques such as XRD, SEM, and resistance measurement method, were dedicated to characterize the changes of surface structure, phase transformation and electric resistance sensitivity in accordance with change of film thickness. In proportion to the decrease of deposition temperature from $370^{\circ}C$ to $350^{\circ}C$, intensities of (200), (011), (211) and (114) planes of $\alpha$-phase were decreased and (100) plane of $\beta$-phase were appeared. The film thickness were controlled by regulating the volume of precursor material during rapid deposition. As a result, it was observed that crystalline particle size had been increased according to the increase of film thickness and $\alpha$-phase transformed to $\beta$-phase. In consequence of measuring the crystallinity of films annealed between $150^{\circ}C$ and $350^{\circ}C$, $\alpha$- to $\beta$-phase transformation was appeared to begin at $150^{\circ}C$ and completely transformed to $\beta$-phase at $350^{\circ}C$. Electric resistance sensitivity of FePc film to $NO_x$ gas along temperature change of FePc films was observed to be more stable with the decrease of the film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.601-606
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• 2000

Nickel mono-silicide(NiSi) shows no increase of resistivity as the line width decreases below 0.15$\mu\textrm{m}$. Furthermore, thin silicide can be made easily and restrain the redistribution of dopants, because NiSi in created through the reaction of one nickel atom and one silicon atom. Therefore, we investigated the deposition condition of Ni films, heat treatment condition and basic properties of NiSi films which are expected to be employed for sub-0.15$\mu\textrm{m}$ class devices. The nickel silicide film was deposited on the Si wafer by using a dc-magnetron sputter, then annealed at the temperature range of $150~1000^{\circ}C$. Surface roughness of each specimen was measured by using a SPM (scanning probe microscope). Microstructure and qualitative composition analysis were executed by a TEM-EDS(transmission electron microscope-energy dispersive x-ray spectroscope). Electrical properties of the materials at each annealing temperature were measured by a four-point probe. As the results of our study, we may conclude that; 1. SPM can be employed as a non-destructive process to monitor NiSi/NiSi$_2$ transformation. 2. For annealing temperature over $800^{\circ}C$, oxygen pressure $Po_2$ should be kept below $1.5{\times}10^{-11}torr$ to avoid oxidation of residual Ni. 3. NiSi to $NiSi_2$ transformation temperature in our study was $700^{\circ}C$ from the four-point probe measurement.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.99-104
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• 2007

Porous silicon exhibiting dual optical properties, both $Febry-P{\acute{e}}rot$ fringe (optical reflectivity) and photoluminescence had been developed and used as chemical sensors. Porous silicon samples were prepared by an electrochemical etch of p-type silicon wafer (boron-doped, <100> orientation, resistivity ; $1-10{\Omega}cm$). Two different types of porous silicon, fresh porous silicon (Si-H terminated) and oxidized porous silicon (Si-OH terminated)by the thermal oxidation, were prepared. Then the samples were exposed to the vapor of various organics, such as methanol, acetone, hexane, and toluene. Both reflectivity and photoluminescence were simultaneously measured under the exposure of organic vapors for sensing VOC's. These surface-modified samples showed unique respond in both reflectivity and photoluminescence with various organic vapors. While polar molecules exhibit greater quenching photoluminescence, molecules having higher vapor pressure show greater red shift for reflectivity.

• Journal of the Korean Society for Nondestructive Testing
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• v.27 no.5
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• pp.375-382
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• 2007

Nondestructive testing (NDT) by using the electromagnetic methods are useful for detecting cracks on the surface and subsurface of the metal. However, when the material contains both ferromagnetic and paramagnetic materials, it is difficult for NDT to detect and analyze cracks using this method. In addition the existence of a partial ferromagnetic material can be incorrectly characterized as a crack in the several cases. On the other hand a large crack has sometimes been misunderstood as a partially magnetized region. Inconel 600 is an important material in atomic energy plant. A nickel film is coated when a crack a appears on an Inconel substrate. Cracks are difficult to detect on the combined material of an Inconel substrate with a nickel film, which are paramagnetic and ferromagnetic material respectively. In this paper, a scan type magnetic camera, which uses a complex induced current-magnetic flux leakage (CIC-MFL) method as a magnetic source and a linearly integrated Hall sensor array (LIHaS) on a wafer as the magnetic sensors, was examined for its ability to detect cracks on the combined material. The evaluation probability of a crack is discussed. In addition the detection probability of the minimum depth was reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.418-418
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• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.

• Clean Technology
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• v.23 no.4
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• pp.357-363
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• 2017

In this study, the supercritical carbon dioxide ($scCO_2$)/ n-butyl acetate (n-BA) co-solvent system was employed to remove an unexposed negative photoresist (PR) from the surface of a silicon wafer. In addition, the selectivity of the $scCO_2$/n-BA co-solvent system was confirmed for the unexposed and exposed negative PR. Optimum conditions for removal of the unexposed PR were obtained from various conditions such as pressure, temperature and n-BA ratio. The n-BA was highly soluble in $scCO_2$ without cloud point and phase separation in mostly experimental conditions. However, the $scCO_2$/n-BA co-solvent was phase separated at 100 bar, above $80^{\circ}C$. The unexposed and exposed PR was swelled in $scCO_2$ solvent at all experimental conditions. The complete removal of unexposed PR was achieved from the reaction condition of 160 bar, 10 min, $40^{\circ}C$ and 75 wt% n-BA in $scCO_2$, as measured by ellipsometry. The exposed photoresist showed high stability in the $scCO_2$/n-BA co-solvent system, which indicated that the $scCO_2$/n-BA co-solvent system has high selectivity for the PR removal in photo lithograph process. The $scCO_2$/n-BA co-solvent system not only prevent swelling of exposed PR, but also provide efficient and powful performance to removal unexposed PR.