• Journal of the Korean Society for Precision Engineering
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• v.16 no.2 s.95
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• pp.60-67
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• 1999

Micro-fabrication techniques such as lithography and LIGA processes usually require large investment and are suitable for mass production. Therefore, there is a need for a new micro-fabrication technique that is flexible and more cost effective. In this paper a novel, economical and flexible method of producing micro-pattern on silicon wafer is presented. This method relies on selective removal of mask by mechanical cutting. Then micro-pattern is produced by chemical etching. V-shaped grooved of about 3 ${\mu}m$ wide and 2 ${\mu}m$ deep has been made on ${SiO_2}m$ coated silicon wafer with this method. This method may be utilized for making microstructures in MEMS application at low cost.

• Journal of the Semiconductor & Display Technology
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• v.16 no.3
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• pp.20-24
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• 2017

For process improvement and cutting down on expenses in solar cell industry, it is necessary to improve recycling process of wafer manufacturing. In this research, a study is introduced to develop classifier which is for recycling of abrasive. First of all, recycling process of wafer manufacturing is analyzed. And then, 3 steps of experiments such as oil removal, impurities removal and classification were executed. For the classification of slurry, a classifier is designed and manufactured. From experiments, it is verified that ultra sound vibration and flux are very important factors for classification. By experiencing the recycling processes and making devices, the technique can be initiated industry if needed such as decreasing waste and cutting down on expenses.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.5-10
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• 2006

This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.7
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• pp.85-93
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• 1999

In this study, PC-based slicing machine and driving software were constructed for the purpose of automation of semi-conductor cutting process. The biggest feature of software is variation of parameter and include data base, signal monitoring, error report, corresponding action or automatic motion planing. Parameters were drawn and algorithms were developed to make software by GUI interface. The cutting experiment was done for sampled wafer to see the effectiveness of the soft automation. From the experimented and implemented results, it is shown that parameters for automation of slicing process could be drawn, then its algorithms constructed. It could be considered what is the merit of this slicing machine by comparing the PC-based and the NC-based.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.1
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• pp.26-33
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• 2016

In this study, a new method to develop a fixed diamond wire for silicon wafer machining by the multi-wire cutting method was developed. The new twist diamond wire has improved performance with high breaking strength and chip flutes structure. According to these characteristics, the new twist diamond wire can be used in the higher speed multi-wire cutting process with a long lifetime. Except the design of the new structure, the twist diamond wire is coating by electroless-electroplating process. It is good for reducing breakage and the falling-off of diamond grains. Based on the silicon material removal mechanism and performance of the wire-cutting machine, the optimal processing condition of the new twist diamond wire has been derived via mathematical analysis. At last, through the tensile testing and the machining experiments, the performance of the twist diamond wire has been obtained to achieve the development goals and exceed the single diamond wire.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.65-65
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.93-93
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• 1993

• Journal of the Microelectronics and Packaging Society
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• v.22 no.3
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• pp.19-23
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• 2015

In this study, two types of Au/TiW bump samples were fabricated by the electroplating process onto Al/Si and SiN/Si wafers for the COG (Chip On Glass) packaging. TiW was used as the UBM (Under Bump Metallurgy) material of the Au bump and it was deposited by a sputtering method under the sputtering powers ranges from 500 to 5000 Watt. We investigated the delamination phenomenas for the prepared samples as a function of the input sputtering powers. The stable interfacial adhesion condition was found to be 1500 Watt in sputtering power. In addition, the SAICAS (Surface And Interfacial Cutting Analysis System) measurement was used to find the adhesion strength of Au bumps for the prepared samples. TiW UBM films were deposited at the 1500 Watt sputtering power. As a results, there was a similar adhesion strengths between TiW/Au interfacial films on Al/Si and SiN/Si wafers. However, the adhesion strength of TiW UBM sputtering films on Al and SiN under films were 2.2 times differences, indicating 0.475 kN/m for Al/Si wafer and 0.093 kN/m for SiN/Si wafer, respectively.

• Clean Technology
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• v.22 no.4
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• pp.274-280
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• 2016

In this study, it was to develop a chemical method that can recycle the cutting oil which accounts for about 25% of the cost of the process among containing materials of silicon waste sludge generated in the process for producing a solar cell wafer. The 7 types of reagents have been used, including acetone, HCl, NaOH, KOH, $Na_2CO_3$, HF, $CH_2Cl_2$, etc. for this experiment. And It was carried out at a speed of 3000 rpm for 60 minutes centrifugation after performing a reaction with a waste sludge at various concentrations. As a result, the best reagents and conditions for separating the solid such as a silicon powder and a metal powder and liquid cutting oil were identified as 0.3 N NaOH. It is found to be pH 6.05 in a post-processing recycled cutting oil with 0.3 N NaOH after reaction of waste sludge and 0.1 N HCl which is effective to remove metal powder in order to adjust the pH to suit the properties of the weak acid is a commercially available cutting oil and it showed excellent turbidity than when applied to sludge with 0.3 N NaOH alone. The results of FT-IR analysis which can compare the properties of the commercially available cutting oil shows it has a possibility of recycling oil. The cutting oil recovery rate obtained through the experiment was found to be 86.9%.

• Tribology and Lubricants
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• v.32 no.2
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• pp.44-49
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• 2016

Diamond mechanical polishing (DMP) is a crucial process in a sapphire wafering process to improve flatness and achieve the target thickness by using free abrasives. In a DMP process, material removal rate (MRR) is a key factor to reduce process time and cost. Controlling mechanical parameters, such as velocity and pressure, can increase the MRR in a DMP process. However, there are limitations of using high velocities and pressures for achieving a high MRR owing to their side effects. In this paper, we present the lapping characteristics and improvement of MRR by using a fixed abrasive plate through an experimental study. The change in MRR as a function of velocity and pressure follows Preston's equation. The surface roughness of a wafer decreases as the plate velocity and pressure increases. We observe a sharp decrease in MRR over the lapping time at a high velocity and pressure in the velocity and pressure test. An analysis of surface roughness (Rq and Rpk) indicates that wear of abrasives decreases the MRR sharply. In order to investigate the effect of abrasive wear on the MRR, we utilize a cutting fluid and a rough wafer. The cutting fluid delays the wear of abrasives resulting in improvement of MRR drop. The rough wafer maintains the MRR at a stable rate by self-dressing.