• Title/Summary/Keyword: WGPD

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Modeling of O/E conversion for 40 Gbps WGPD submodule (40Gbps 급 도파로형 광수신소자 submodule의 광전변환특성 모델링)

  • Jeon, Su-Chang;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.79-80
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    • 2005
  • In this paper, the circuit models of optical to electrical(O/E) characteristics of waveguide photodiode(WGPD) submodule are examined. Test structures of WGPD and WGPD submodule were fabricated and S21 parameter was measured to characterize the O/E conversion property. Valid circuit models were derived by RF circuit simulation and O/E characteristics were modeled to analyze the effects of model parameters on the WGPD submodule performances. Based on the results, it can be concluded that the suggested WGPD submodule model can explain the characteristics of the O/E conversion of WGPD submodule, where the parasitic components originated from ribbon bonding block crucially influence on the performance of WGPD submodule, are able to show more efficient property by making compact bonding structure. We propose an effective WGPD submodule bonding structure and it can ensure the 40Gbps operation of WGPD.

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Equivalent circuit models of WGPD and Submodule for 40-Gbps optical receivers (40-Gbps 급 광수신기를 위한 WGPD 서브모듈의 모델링)

  • Jeon, Su-Chang;Joo, Han-Sung;Lee, Bong-Yong;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.154-157
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    • 2004
  • With the need of high-speed and mass data transmission, optical communication system requires the growth of optical components. Waveguide photodiodes(WGPDs) are introduced and circuit models of WGPD and submodule are required for the optical receiver application. In this paper, the circuit models of WGPD and submodule are investigated and modeling results are derived by PEEC methodology. The s-parameters are measured for the test structures of WGPD and submodule and the equivalent circuit models are examined. The modeling results agreed well with the measured data and can present a reasonable physical representation.

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Reliability testing of InGaAs Waveguide Photodiodes for 40-Gbps Optical Receiver Applications (40-Gbps급 InGaAs 도파로형 포토다이오드의 신뢰성 실험)

  • Joo, Han-Sung;Ko, Young-Don;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.13-16
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    • 2004
  • The reliability of 1.550m-wavelength InGaAs mesa waveguide photodiodes(WGPDs), which developed for 40-Gbps optical receiver applications, fabricated by metal organic chemical vapor deposition is investigated. Reliability is examined by both high-temperature storage tests and the accelerated life tests by monitoring dark current and breakdown voltage. The median device lifetime and the activation energy of the degradation mechanism are computed for WGPD test structures. From the accelerated life test results, the activation energy of the degradation mechanism and median lifetime of these devices in room temperature are extracted from the log-normal failure model by using average lifetime and the standard deviation of that lifetime in each test temperature. It is found that the WGPD structure yields devices with the median lifetime of much longer than $10^6$ h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gbps optical receiver modules.

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Fabrication of 40 Gb/s Front-End Optical Receivers Using Spot-Size Converter Integrated Waveguide Photodiodes

  • Kwon, Yong-Hwan;Choe, Joong-Seon;Kim, Je-Ha;Kim, Ki-Soo;Choi, Kwang-Seong;Choi, Byung-Seok;Yun, Ho-Gyeong
    • ETRI Journal
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    • v.27 no.5
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    • pp.484-490
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    • 2005
  • We fabricated 40 Gb/s front-end optical receivers using spot-size converter integrated waveguide photodiodes (SSC-WGPDs). The fabricated SSC-WGPD chips showed a high responsivity of approximately 0.8 A/W and a 3 dB bandwidth of approximately 40 GHz. A selective wet-etching method was first adopted to realize the required width and depth of a tapered waveguide. Two types of electrical pre-amplifier chips were used in our study. One has higher gain and the other has a broader bandwidth. The 3 dB bandwidths of the higher gain and broader bandwidth modules were about 32 and 42 GHz, respectively. Clear 40 Gb/s non-return-to-zero (NRZ) eye diagrams showed good system applicability of these modules.

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Design and Fabrication of Side-illuminated p-i-n Photodetectors with High Responsivity and Coupling Tolerance (높은 Responsivity와 광결합 공차를 가지는 면입사형 p-i-n 광검출소자의 설계 및 제작)

  • 이도영;강화영;전병옥;양승기;이은화;김태진;장동훈;김태일
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.07a
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    • pp.104-105
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    • 2003
  • We have fabricated a side-illuminated p-i-n photodetectors with evanescently-coupled waveguides for surface hybrid integration in low-cost modules. We adopted WGPD of evanescently-coupled type to have high responsivity and coupling tolerance, and to avoid any reliability problem. This proposed photodetectors have a high responsivity of 1.10 A/W at a wavelength of 1.55 ${\mu}{\textrm}{m}$. The 1dB coupling tolerance to cleaved fiber and photodetectors is $\pm$3.5 ${\mu}{\textrm}{m}$ in the vertical direction and $\pm$11 ${\mu}{\textrm}{m}$ in the horizontal direction.

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