• 제목/요약/키워드: WAFER

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실리콘 웨이퍼 비저항에 따른 Dopant-Free Silicon Heterojunction 태양전지 특성 연구 (The Influence of the Wafer Resistivity for Dopant-Free Silicon Heterojunction Solar Cell)

  • 김성해;이정호
    • 한국표면공학회지
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    • 제51권3호
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    • pp.185-190
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    • 2018
  • Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

실리콘 웨이퍼 생산공정용 왁스 스핀코팅장치 내 기류 특성에 대한 3차원 전산유동해석 (A Three-Dimensional CFD Study on the Air Flow Characteristics in a Wax Spin Coater for Silicon Wafer Manufacturing)

  • 김용기;김동주;우마로프 알리세르;김경진;박준영
    • 한국기계가공학회지
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    • 제10권6호
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    • pp.146-151
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    • 2011
  • Wax spin coating is a part of several wafer handling processes in the silicon wafer polishing station. It is important to ensure the wax layer free of contamination to achieve the high degree of planarization on wafers after wafer polishing. Three-dimensional air flow characteristics in a wax spin coater are numerically investigated using computational fluid dynamics techniques. When the bottom of the wax spin coater is closed, there exists a significant recirculation zone over the rotating ceramic block. This recirculation zone can be the source of wax layer contamination at any rotational speed and should be avoided to maintain high wafer polishing quality. Thus, four air suction ducts are installed at the bottom of the wax spin coater in order to control the air flow pattern over the ceramic block. Present computational results show that the air suction from the bottom is quite an effective method to remove or minimize the recirculation zone over the ceramic block and the wax coating layer.

Double treated mixed acidic solution texture for crystalline silicon solar cells

  • Kim, S.C.;Kim, S.Y.;Yi, J.S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.323-323
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    • 2010
  • Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.

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반도체 웨이퍼 제조공정에서의 스케줄링 규칙들의 성능 분석 (Performance Analysis of Scheduling Rules in Semiconductor Wafer Fabrication)

  • 정봉주
    • 한국시뮬레이션학회논문지
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    • 제8권3호
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    • pp.49-66
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    • 1999
  • Semiconductor wafer fabrication is known to be one of the most complex manufacturing processes due to process intricacy, random yields, product diversity, and rapid changing technologies. In this study we are concerned with the impact of lot release and dispatching policies on the performance of semiconductor wafer fabrication facilities. We consider several semiconductor wafer fabrication environments according to the machine failure types such as no failure, normal MTBF, bottleneck with low MTBF, high randomness, and high MTBF cases. Lot release rules to be considered are Deterministic, Poisson process, WR(Workload Regulation), SA(Starvation Avoidance), and Multi-SA. These rules are combined with several dispatching rules such as FIFO (First In First Out), SRPT (Shortest Remaining Processing Time), and NING/M(smallest Number In Next Queue per Machine). We applied the combined policies to each of semiconductor wafer fabrication environments. These policies are assessed in terms of throughput and flow time. Basically Weins fabrication setup was used to make the simulation models. The simulation parameters were obtained through the preliminary simulation experiments. The key results throughout the simulation experiments is that Multi-SA and SA are the most robust rules, which give mostly good performance for any wafer fabrication environments when used with any dispatching rules. The more important result is that for each of wafer fabrication environments there exist the best and worst choices of lot release and dispatching policies. For example, the Poisson release rule results in the least throughput and largest flow time without regard to failure types and dispatching rules.

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Least Square Circle Fitting을 이용한 Pre-Alignment (Pre-Alignment Using the Least Square Circle Fitting)

  • 이남희;조태훈
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2009년도 추계학술대회
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    • pp.410-413
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    • 2009
  • 웨이퍼 Pre-Alignment는 반도체 공정에서 장비에 웨이퍼를 놓기 전에 웨이퍼의 중심 및 방향을 정확하게 정렬할 필요가 있는데, 이를 위해서 일정한 수준 이하로 중심과 방향을 찾아 Alignment 하는 방법을 말한다. 본 논문에서는 웨이퍼를 Alignment 하기 위해 기존의 Mechanical한 방법이 아닌 Area 카메라를 통한 비접촉식 방법을 이용하였다. 이 방법은 웨이퍼를 45도씩 8번씩, 한 바퀴를 회전하여 이미지를 획득한 뒤, 이미지의 웨이퍼의 에지값 들을 이용하여 Least Square Circle Fitting을 이용하여 웨이퍼의 중심과 방향을 정확하게 측정하여 Alignment를 한다.

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반도체 Wafer Fabrication 공정에서의 Shift 단위 생산 일정계획 (Shift Scheduling in Semiconductor Wafer Fabrication)

  • 예승희;김수영
    • 산업공학
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    • 제10권1호
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    • pp.1-13
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    • 1997
  • 반도체 Wafer Fabrication 공정은 무수한 공정과 복잡한 Lot의 흐름 등으로 다른 제조 형태에 비해 효율적인 관리가 대단히 어려운 부문이다. 본 연구는 반도체 Fab을 대상으로 주어진 생산 소요량과 목표 공기를 효율적으로 달성하기 위한 Shift 단위의 생산 일정계획을 대상으로 하였다. 특히, 전 공정 및 장비를 고려하기보다는 Bottleneck인 Photo 공정의 Stepper를 중심으로, 공정을 Layer단위로 묶어, 한 Shift에서 어떻게 Stepper를 할당하고 생산계획을 할 것인가를 결정하기 위한 2단계 방법론을 제시하고, Stepper 할당 및 계획에 필요한 3가지 알고리즘들을 제시하였다. 이 기법들을 소규모의 예제들에 대해 적용한 결과와 최적해와의 비교를 통하여 그 성능을 평가하였다.

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Bare Wafer Inspection using a Knife-edge Test

  • Lee, Jun-Ho;Kim, Yong-Min;Kim, Jin-Seob;Yoo, Yeong-Eun
    • Journal of the Optical Society of Korea
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    • 제11권4호
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    • pp.173-176
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    • 2007
  • We present a very simple and efficient bare-wafer inspection method using a knife-edge test. The wafer front surface and inner structures are inspected simultaneously. The wafer front surface is inspected visually using a knife-edge test while the inner structure is simultaneously inspected by a camera in the infrared region with a single white-light source. This paper presents a laboratory implementation of the test method with some experimental results.

Study on Scribing Sapphire Wafer for LED

  • Moon, Yang-Ho;Kim, Nam-Seung
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.341-344
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    • 2006
  • LED chips are produced by cutting the sapphire on which GaN is evaporated. To cut the sapphire wafer into each LED chip, at first the wafer is scribed by diamond tool. To get the sharp groove shape for the nice cutting plane it is important the diamond tool shape, load, etc when the wafer is scribed. Here we tried to simulate the scribing process and get the scribing condition to reduce the wear rate of diamond tool for the sharp groove shape.

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