• Title/Summary/Keyword: W-beam

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Acquisition of Fuzzy Control Rules using Genetic Algorithm for a Ball & Beam System

  • S.B. Cho;Park, K.H.;Lee, Y.W.
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.40.6-40
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    • 2001
  • Fuzzy controls are widely used in industrial fields using experts knowledge base for its high degree of performance. Genetic Algorithm(GA) is one of the numerical method that has an advantage of optimization. In this paper, we present an acquisition method of fuzzy rules using genetic algorithm. Knowledge of the system is the key to generating the control rules. As these rules, a system can be more stable and it reaches the control goal the faster. To get the optimal fuzzy control rules and the membership functions, we use the GA instead of the experts knowledge base. Information of the system is coded the chromosome with suitable phenotype. Then, it is operated by genetic operator, and evaluated by evaluation function. Passing by the decoding process with the fittest chromosome, the genetic algorithm can tune the fuzzy rules and the membership functions automatically ...

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Sequential conversion from line defects to atomic clusters in monolayer WS2

  • Gyeong Hee Ryu;Ren-Jie Chan
    • Applied Microscopy
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    • v.50
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    • pp.27.1-27.6
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    • 2020
  • Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS2 and WS2, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS2 sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.

A probabilistic micromechanical framework for self-healing polymers containing microcapsules

  • D.W. Jin;Taegeon Kil;H.K. Lee
    • Smart Structures and Systems
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    • v.32 no.3
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    • pp.167-177
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    • 2023
  • A probabilistic micromechanical framework is proposed to quantify numerically the self-healing capabilities of polymers containing microcapsules. A two-step self-healing process is designed in this study: A probabilistic micromechanical framework based on the ensemble volume-averaging method is derived for the polymers, and a hitting probability model combined with a crack nucleation model is then utilized for encountering microcapsules and microcracks. Using this framework, a series of parametric investigations are performed to examine the influence of various model parameters (e.g., the volume fraction of microcapsules, microcapsule radius, radius ratio of microcracks to microcapsules, microcrack aspect ratio, and scale parameter) on the self-healing capabilities of the polymers. The proposed framework is also implemented into a finite element code to solve the self-healing behavior of tapered double cantilever beam specimens.

Electrical and Optical Properties of the IZTO Thin Film Deposited on PET Substrates with SiO2 Buffer Layer (SiO2 버퍼층을 갖는 PET 기판위에 증착한 IZTO 박막의 전기적 및 광학적 특성)

  • Park, Jong-Chan;Joung, Yang-Hee;Kang, Seong-Jun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.21 no.3
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    • pp.578-584
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    • 2017
  • $SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

Comparison of Radiation Dose in the Measurement of MDCT Radiation Dose according to Correction of Temperatures and Pressure, and Calibration of Ionization Chamber (MDCT 선량측정에서 온도와 압력에 따른 보정과 Ionization Chamber의 Calibration 전후 선량의 비교평가)

  • Lee, Chang-Lae;Kim, Hee-Joung;Jeon, Seong-Su;Cho, Hyo-Min;Nam, So-Ra;Jung, Ji-Young;Lee, Young-Jin;Lee, Seung-Jae;Dong, Kyung-Rae
    • Progress in Medical Physics
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    • v.19 no.1
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    • pp.49-55
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    • 2008
  • This study aims to conduct the comparative analysis of the radiation dose according to before and after the calibration of the ionization chamber used for measuring radiation dose in the MDCT, as well as of $CTDI_w$ according to temperature and pressure correction factors in the CT room. A comparative analysis was conducted based on the measured MDCT (GE light speed plus 4 slice, USA) data using head and body CT dosimetric phantom, and Model 2026C electrometer (RADICAL 2026C, USA) calibrated on March 21, 2007. As a result, the $CTDI_w$ value which reflected calibration factors, as well as correction factors of temperature and pressure, was found to be the range of $0.479{\sim}3.162mGy$ in effective radiation dose than the uncorrected values. Also, under the routine abdomen routine CT image acquisition conditions used in reference hospitals, patient effective dose was measured to indicate the difference of the maximum of 0.7 mSv between before and after the application of such factors. These results imply that the calibration of the ion chamber, and the correction of temperature and pressure of the CT room are crucial in measuring and calculating patient effective dose. Thus, to measure patient radiation dose accurately, the detailed information should be made available regarding not only the temperature and pressure of the CT room, but also the humidity and recombination factor, characteristics of X-ray beam quality, exposure conditions, scan region, and so forth.

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Microstructure and Hardness of Surface Melting Hardened Zone of Mold Steel, SM45C using Yb:YAG Disk Laser

  • Lee, Kwang-Hyeon;Choi, Seong-Won;Yoon, Tae-Jin;Kang, Chung-Yun
    • Journal of Welding and Joining
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    • v.34 no.1
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    • pp.75-81
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    • 2016
  • This study applied laser surface melting process using CW(Continuous wave) Yb:YAG laser and cold-work die steel SM45C and investigated microstructure and hardness. Laser beam speed, power and beam interval are fixed at 70 mm/sec, 2.8 kW and $800{\mu}m$ respectively. Depth of Hardening layer(Melting zone) was a minimum of 0.8 mm and a maximum of 1.0 mm that exceeds the limit of minimum depth 0.5 mm applying trimming die. In all weld zone, macrostructure was dendrite structure. At the dendrite boundary, Mn, Al, S and O was segregated and MnS and Al oxide existed. However, this inclusion didn't observe in the heat-affected zone (HAZ). As a result of interpreting phase transformation of binary diagram, MnS crystallizes from liquid. Also, it estimated that Al oxide forms by reacting with oxygen in the atmosphere. The hardness of the melting zone was from 650 Hv to 660 Hv regardless of the location that higher 60 Hv than the hardness of the HAZ that had maximum 600 Hv. In comparison with the size of microstructure using electron backscatter diffraction(EBSD), the size of microstructure in the melting zone was smaller than HAZ. Because it estimated that cooling rate of laser surface melting process is faster than water quenching.

Application of time-of-flight near infrared spectroscopy to Satsuma mandarin

  • Tsuchikawa, Satoru;Ito, Satomi;Inoue, Kinuyo;Miyamoto, Kumi
    • Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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    • 2001.06a
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    • pp.1626-1626
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    • 2001
  • In this study, a newly constructed optical measurement system, whose main components were a parametric tunable laser and a near infrared photoelectric multiplier, was applied to detection of the information for the inside of Satsuma mandarin using time-of-flight near infrared spectroscopy (TOF-NIRS). The combined effects on the time resolved profile of sample diameter, sugar content, the wavelength of the laser beam, and the detection position of transmitted light were investigated in detail. The samples used were Satsuma mandarin (Citrus unshu $M_{ARC}$.) (location: Wakayama, Japan) having the diameters of 50-84 mm. The sugar content measured by a refractometer varied from 9.9 to 16.3 Brix%. Equator of sample was irradiated vertically with the pulsed laser, and transmitted output power was measured on the restricted position of the equator using the optical fiber cable. The sampling time and the number of averaging the output power were 100 ns and 100 times, respectively. The variation of the attenuance of peak maxima At, the time delay of peak maxima $\Delta$t and the variation of full width at half maximum Δw were strongly dependent on the detection position and the wavelength of the laser beam. At, $\Delta$t and $\Delta$w increased gradually as the sample diameter increased to be much absorbed and vigorously scattered. On the other hand, each optical parameter had a tendency to increase as the sugar content increased. Such behavior was remarkable when the transmitted light was detected at the side face of a sample. When we apply TOF-NIRS to detection of the information for the inside of fruit with high moisture content like Satsuma mandarin, it is very important to give attention to the difference in the scattered light within tissues and the semi-straightly propagated light. Furthermore, we tried to express the resulting phenomena by using a model samples composed of water, sucrose, and milk. The variation of the time resolved profile is strongly governed by the combination of the light absorption component, scattering medium, and refractive index.

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Evaluation of Fatigue Resistance of Selected Warm-mix Asphalt Concrete (준고온 아스팔트 콘크리트 피로저항성 평가)

  • Kim, Sungun;Lee, Sung-Jin;Kim, Kwang W.
    • Journal of The Korean Society of Agricultural Engineers
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    • v.62 no.3
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    • pp.29-38
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    • 2020
  • Since some warm-mix asphalt (WMA) concretes were known to show poorer rut resistance than the hot-mix asphalt (HMA) concretes, many studies were performed in efforts of improving its performance at high temperature. The reason is assumed to be due to the moisture remaining in aggregates dried at lower temperature. Therefore, not only the rut resistance, the crack resistance of WMA concrete was also in question. In this study, fatigue life of WMA concrete was evaluated in comparison with HMA using 3-point bending (3PB) beam test. The asphalt mixtures were prepared based on Korean mix-design guide using a 13 mm dense-graded aggregate and 6 binders; two HMA binders and four WMA binders. By 3PB fatigue test, normal (unmodified) and polymer-modified WMA concretes were evaluated in comparison with normal and polymer-modified HMA concretes at a low temperature (-5℃). The results showed that most of WMA concretes showed longer fatigue lives than HMA concretes, even though the same PG binders were used for HMA and WMA. This result indicates that the WMA concretes have stronger resistance against fatigue cracking than HMA at the low temperature, and this result is in contrast to the high-temperature performance test.

Microstructure and Mechanical Properties of (Ti,Al)N Films Deposited by Ion Beam Sputtering (이온빔 스퍼터링에 의해 제조된 (Ti,Al)N 박막의 미세구조 및 기계적 특성)

  • Oh, Y.G.;Baeg, C.H.;Hong, J.W.;Wey, M.Y.;Kang, H.J.
    • Journal of the Korean Society for Heat Treatment
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    • v.16 no.6
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    • pp.329-334
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    • 2003
  • Microstructure and mechanical properties of $(Ti_{1-x}Alx)N$ films, Produced by the the Ion Beam Sputtering(IBS) method, were studied by changing the Ti, Al contents. The compositions of films determined by RBS were $(Ti_{0.75}Al_{0.25})N$, $(Ti_{0.61}Al_{0.39})N$ and $(Ti_{0.5}Al_{0.5})N$, and XPS binding energies of Ti2P, A12p and N1s shifted to higher energies than those of pure Ti, Al and N, which indicated that nitrides were formed. XRD results indicated that the NaCl structure for $$x{\leq_-}0.39$$ changed into amorphous structure at x=0.5. For films with $$x{\leq_-}0.39$$, the lattice parameter decreased in proportion to the Al content. Nanoindentation hardness value were above HV=3300 at Al content up to x=0.39. However, the hardness of films with x=0.5 abruptly decreased to HV=1800, and this lower hardness values were attributed to different crystal structure. Critical load(Lc) in scratch test showed 23N at x=0.25, 22N at x=0.39 and 22N at x=0.5, which indicated that films with different Al contents showed similar adhesion behavior.

Improved Uniformity of GaAs/AlGaAs DBR Using the Digital Alloy AlGaAs Layer (디지털 합금 AlGaAs층을 이용하여 제작된 GaAs/AlGaAs DBR의 균일도 향상)

  • Cho, N.K.;Song, J.D.;Choi, W.J.;Lee, J.I.;Jeon, Heon-Su
    • Journal of the Korean Vacuum Society
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    • v.15 no.3
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    • pp.280-286
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    • 2006
  • A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.