• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.33-38
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• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.21-28
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• 2000

Refractory metals, W and Ti, and their nitrides, $W_2N$ and TiN, were investigated for using as an ohmic contact material with SiC single crystalline thin films. The possibility of nitride materials for using as a stable ohmic contact material of SiC at high temperatures was examined by considering the thermal stability depending on the heat treatment temperature, their electrical properties and protective behavior from the interdiffusion. W contact with SiC thin films, deposited by using new organosilicon precursor, bis-trimethylsilylmethane, showed the lowest resistivity, $2.17{\times}10^{-5}$Ω$\textrm{cm}^2$. On the other hand, Ti-based contact materials showed higher contact resistivity than W-based ones. The oxidation of contact materials was restricted by applying Pt thin films on those electrodes. Nitride electrodes had rather stable electrical properties and better protective behavior from interdiffusion than metal electrodes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.302-303
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• 2014

유도결합플라즈마 보조 D.C.마그네트론 스퍼터링법을 이용하여 STS316L 위에 Ti-Cr-N 박막의 증착하였으며 크롬과 질소의 함량에 따른 부식특성 변화를 관찰하였다. Ti-Cr-N 박막을 증착시켰을 때는 미처리 STS316L에 비해 더 우수한 부식특성을 보였으며 크롬타겟의 인가전원이 100W 일 때와 질소비가 0.3일 때 가장 우수한 내부식 특성을 나타내었다.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.188-192
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• 2013

Many studies have been conducted for preventing from diffusion between silicon wafer and metallic thin film due to a decrease of line-width and multi-layer thin film for miniaturization and high integration of semiconductor. This paper has focused on the nano-mechanical property of diffusion barrier which sample is prepared for various gas flow rate of nitrogen with tungsten (W) base from 2.5 to 10 sccm. The deposition rate, resistivity and crystallographic properties were measured by a ${\beta}$-ray back-scattering spectroscopy, 4-point probe and x-ray diffraction (XRD), respectively. We also has investigated the nano-mechanical property using the nano-indenter. As a result, the surface hardness of W-N thin film was increased rapidly from 10.07 to 15.55 GPa when the nitrogen gas flow was increased from 2.5 to 5 sccm. And the surface hardness of W-N thin film had 12.65 and 12.77 GPa at the nitrogen gas flow of 7.5 and 10 sccm respectively. These results were decreased by the comparison with the W-N thin film at nitrogen gas flow of 5 sccm. It was inferred that these severe changes were caused by the stoichiometric difference between the crystalline and amorphous state in W-N thin film. In addition, these results were caused by increased compressive stress.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.67-74
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• 2018

Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.115-120
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• 1998

The $TiN_x$ thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitrogen flow rates in the range 3-9 seem with a constant argon flow rate of 20 seem. For the films obtained, the chemical binding energy of the films was investigated by XPS (x-ray photoelectron spectroscopy) in order to analyze the chemical nature and composition of the films.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.1
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• pp.21-25
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• 1999

The TiN, thin films were prepared on glass substrate by RF(radio-frequency) magnetron sputtering apparatus from a Ti target in a gaseous mixture of argon and nitrogen. In deposition, a RF power supply was used as a power source with a constant power of 240W, and the substrate was heated to $200^{\circ}C$. The films were obtained at nitogen flow rates in the range 3-9 sccm with a constant argon flow rate of 20 secm. For the films obtained, the sheet resistance and the chemical binding energy of the films was observed by four-point-probe method and x-ray photoelectron spectroscopy(XPS) depth profiling respectively. In addition, we investigated the relationship between the surface resistance and the chemical nature of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.87-88
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• 2007

반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.181-181
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• 2010

RF magnetron sputtering을 이용하여 RF power 및 공정 압력에 따라 ZnO 박막을 유리기판 위에 제작하고 구조적, 광학적, 전기적 특성을 조사하였다. 박막 증착 조건의 초기 압력은 $1.0{\times}10^{-6}\;Torr$, 증착온도는 상온으로 고정하였으며 기판은 Corning 1737 유리 기판을 사용하였다. 공정 변수로 RF파워는 25W, 50W, 75W, 100W로 변화시키고, 증착 압력은 20m, 100m, 200m 300mTorr로 변화시켰다. 유리기판 위에 증착된 모든 ZnO 박막에서 (002) 면의 우선배향성이 관찰되었고 RF power가 50 W와 75W 에서 좋은 결정성을 나타내었다. 공정조건별로 제작된 모든 ZnO박막에서 85% 이상의 투과율을 나타내었으며, 증착압력이 증가함에 따라 광학적인 밴드 갭이 증가하였다. Hall 측정 결과 모든 샘플에서 n타입 특성이 확인되으며, 75W와 300mTorr일 때 전기비저항 $3.56\;{\times}\;10^{+1}\;{\Omega}cm$, 전하의 농도 $2.8\;{\times}\;10^{17}cm^{-3}$, 이동도 $0.613\;cm^2V^{-1}s^{-1}$로 반도체 활성층으로 가장 적합한 전기적 특성을 얻었다. RF 파워가 증가하고, 증착압력이 증가할 수록 ZnO 박막 특성이 좋아지는 경향성을 확인하였다.