• Korean Journal of Crystallography
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• v.12 no.3
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• pp.141-144
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• 2001

From the reaction of Na[Ga(N₃)₄] with PPh₃, an ionic compound [Ph₃P(OH)]/sup +/[N₃]/sup -/ (1) was isolated. Compound 1 was characterized by spectroscopy (¹H-NMR, /sup 13C{¹H}-NMR, and IR) and X-ray diffraction. Crystallographic data for 1 : orthorhombic space group P2₁2₁2₁, a = 10.491 (4) Å, b=11.603(5)Å, c=13.149(5)Å, Z=4, R(wR₂)=0.0547(0.0978).

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.212-217
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• 2013

Ultra hard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) magnetron sputtering techniques. The effects of ICP power, ranging from 0 to 300 W, on the coating microstructure, crystallographic, and mechanical properties were systematically investigated with FE-SEM, AFM, HR-XRD and nanoindentation. The results show that ICP power has a significant influence on the coating microstructure and mechanical properties of TiN coatings. With an increasing ICP power, the film microstructure evolves from an apparent columnar structure to a highly dense one. Grain sizes of TiN coatings decreased from 12.6 nm to 8.7 nm with an increase of the ICP power. A maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at an ICP power of 300 W. The crystal structure and preferred orientation in the TiN coatings also varied with the ICP power, exerting an effective influence on film nanohardness.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.45-50
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• 1984

V-groove N+P solar cell is fabricated by thermal diffusion in silicon wafer with (100) crystal structure. To form the V-grooves in (100) silicon surface, a mixture of etylen-diamine, water, pyrocathecol is used as the etchant of anisotropic etching. Under light intensity of 100mW/$\textrm{cm}^2$, the efficiency of the V-groove solar cell is 2.5-3.5% greater than the conventional N+P solar cell and 0.4-0.6% greater than the texturized one.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.55-60
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• 2013

Superhard TiN coatings were fabricated by DC and ICP (inductively coupled plasma) assisted magnetron sputtering techniques. The effect of ICP power, ranging from 0 to 300 W, on coating microstructure, preferred orientation mechanical properties were systematically investigated with HR-XRD, SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Grain sizes of TiN coatings were decreased from 12.6 nm to 8.7 nm with increase of ICP power. The maximum nanohardness of 67.6 GPa was obtained for the coatings deposited at ICP power of 300 W. Preferred orientation in TiN coatings also vary with ICP power, exerting an effective influence on film nanohardness.

• Bulletin of the Korean Mathematical Society
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• v.36 no.2
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• pp.273-285
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• 1999

In this paper we establish the weak law of large numbers for randomly weighted partial sums of random variables and study conditions imposed on the triangular array of random weights {$W_{nj}{\;}:{\;}1{\leq}j{\leq}n,{\;}n{\geq}1$} and on the triangular array of random variables {$X_{nj}{\;}:{\;}1{\leq}j{\leq}n,{\;}{\geq}1$} which ensure that $\sum_{j=1}^{n}{\;}W_{nj}{\mid}X_{nj}{\;}-{\;}B_{nj}{\mid}$ converges In probability to 0, where {$B_{nj}{\;}:{\;}1{\;}{\leq}{\;}j{\;}{\leq}{\;}n,{\;}n{\;}{\geq}{\;}1$} is a centering array of constants or random variables.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.78-82
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• 2005

펄스 플라즈마 원자층 증착 방법 (PPALD : Pulse Plasma Atomic Layer Deposition)을 이용하여 삼원계 박막인 W-C-N 박막을 ILD layer인 TEOS 위에 제조하였다. 실험은 $WF_6,\;N_2.\;CH_4$ 가스의 순차적 주입과 $N_2$를 이용한 퍼징으로 이루어지며 $N_2$와 $CH_4$ 가스 주입 시에 pulse plasma가 적용되었다. 일반적인 ALD 증착 기구를 그대로 따르는 PPALD 방법에 의해 제조된 W-C-N 박막은 $H_2/N_2$ 플라즈마 초기 표면 처리에 의해 incubation cycles 없이 초기 cycles부터 0.2 nm/cycle의 일정한 증착율을 가지고 증착되므로 정확한 두께의 control이 가능하며 $300\;{\mu}{\Omega}-cm$의 매우 낮은 비저항 특성을 나타내었다.

• Journal of electromagnetic engineering and science
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• v.15 no.2
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• pp.82-88
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• 2015

The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.5
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• pp.364-371
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• 2017

TPMS is a vehicle electric system that measures the air pressure of a tire, and informs the driver of current tire states. The TPMS sensor typically uses unidirectional communication for small size, light weight, and low power. The transmission period of the sensor indicates the service quality of monitoring the tire. In order to determine the optimal transmission period, frame collision probability and the life time of the sensor should be analyzed. In this paper, collision probability model using Venn diagram is designed in low power TPMS with the normal and warning mode. And the life time and a collision probability were analyzed with the ratio(n) of the normal mode to warning mode transmission period. As a result, $T_{nP}=31sec$ and $T_{wP}=2.4sec$ at 5 years, and $T_{nP}=71sec$ and $T_{wP}=2.5sec$ at 7 years.

• Journal of KIISE:Computer Systems and Theory
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• v.35 no.9_10
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• pp.476-484
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• 2008

Most string problems and their solutions are relevant to diverse applications such as pattern matching, data compression, recently bioinformatics, and so on. However, there have been few works on the relations between string problems and cryptographic problems. In this paper, we consider the following string reconstruction problems and show how these problems can be applied to cryptography. Given a string x of length n over a constant-sized alphabet ${\sum}$ and a set W of strings of lengths at most an integer $k({\leq}n)$, the first problem is to find the sequence of strings in W that reconstruct x by the minimum number of concatenations. We propose an O(kn+L)-time algorithm for this problem, where L is the sum of all lengths of strings in a given set, using suffix trees and a shortest path algorithm for directed acyclic graphs. The other is a dynamic version of the first problem and we propose an $O(k^3n+L)$-time algorithm. Finally, we show that exponentiation problems that arise in cryptography can be successfully reduced to these problems and propose a new solution for exponentiation.