• Journal of IKEEE
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• v.23 no.1
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1064-1073
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• 2013

In this paper, a compact 370 W high efficiency GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) power amplifier(PA) using internal harmonic manipulation circuits is presented for cellular and L-band. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequency. In order to minimize package size, new 41.8 mm GaN HEMT and two MOS(Metal Oxide Semiconductor) capacitors are internally matched and combined package size $10.16{\times}10.16{\times}1.5Tmm^3$ through package material changes and wire bonded in a new package to improve thermal resistance. When drain biased at 48 V, the developed GaN HEMT power amplifier has achieved over 80 % Drain Efficiency(DE) from 770~870 MHz and 75 % DE at 1,805~1,880 MHz with 370 W peak output power(Psat.). This is the state-of-the-art efficiency and output power of GaN HEMT power amplifier at cellular and L-band to the best of our knowledge.

• Journal of the Korean Society of Groundwater Environment
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• v.5 no.2
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• pp.88-100
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• 1998

Since fractures may serve as major conduits of groundwater flow in crystalline rocks, characterization of conductive fractures is especially important for interpretation of flow system. In this study, characterization of fractures to investigate hydraulically conductive fractures in gneisses at an abandoned mine area was performed. The orientation, width, length, movement sense, infilling materials, spacing, aperture, roughness of both joints and faults and intersection and connectivity to other joints were measured on outcrops. In addition, characteristics of subsurface fractures were examined by core logging in five boreholes, of which the orientations were acquired by acoustic televiewer logging from three boreholes. The dominant fracture sets were grouped from outcrops; GSet 1: N50-82$^{\circ}$E/55-90$^{\circ}$SE, GSet 2: N2-8$^{\circ}$E/56-86$^{\circ}$SE, GSet 3: N46-72$^{\circ}$W/60-85$^{\circ}$NE, GSet 4:Nl2-38$^{\circ}$W/15-40$^{\circ}$SW and from subsurface; HSet 1: N50-90$^{\circ}$E/55-90$^{\circ}$SE, HSet 2: N10-30$^{\circ}$E/50-70$^{\circ}$SE, HSet 3: N20-60$^{\circ}$W/50-80$^{\circ}$NE, HSet 4: N10-50$^{\circ}$E/$\leq$40$^{\circ}$NW. Among them, GSet 1, GSet 3 and HSet 1, HSet 3 are the most intensely developed fracture sets in the study area. The mean fracture spacings of HSet 1 are 30-47cm and code 1 fractures, such as faults and open fractures, comprise 21.0-42.9 percent of the whole fractures in each borehole. HSet 3 shows the mean fracture spacings of 55-57cm and the ratio of code 1 fractures is 15.4-26.9 percent. In spite of the mean fracture spacing of 239cm, code 1 fractures of HSet 4 have the highest ratio of 54.5 percent. From the fact that faults or open fractures have high hydraulic conductivity, it can be inferred that the three fracture sets of N55-85$^{\circ}$E/50-80$^{\circ}$SE, N20-60$^{\circ}$W/50-75$^{\circ}$NE and N10-30$^{\circ}$E/$\leq$30$^{\circ}$NW from a fracture system of relatively high conductivity. It is indirectly verified with geophysical loggings and constant injection tests performed in the boreholes.

• Journal of the Korean Mathematical Society
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• v.33 no.2
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• pp.367-379
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• 1996

Let $V = {(z, y) : f(z, y) = z^n + Ay^\alpha z^p + y^\beta z^q + y^k = 0}$ and $W = {(z, y) : g(z, y) = z^n + By^\gamma z^s + y^\delta z^t + y^k = 0}$ be germs of analytic irreducible subvarieties of a polydisc near the origin in $C^2$ with n < k and (n, k) = 1 where A and B are complex numbers. Assume that V and W are topologically equivalent near the origin.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.375-379
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• 2014

Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

• Journal of applied mathematics & informatics
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• v.26 no.1_2
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• pp.437-443
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• 2008

In this paper, we establish detailed characterizations of the Weibull distribution by the independence of the upper record values. We prove that X $\in$ W EI($\alpha$), if and only if $\frac{X_{U(n)}}{X_{U(n+1)}+X_{U(n)}}$ and $X_{U(n+1)}$ are independent for n $\geq$ 1. And we show that X $\in$ W EI($\alpha$), if and only if $\frac{X_{U(n+1)}-X_{U(n)}}{X_{U(n+1)}+X_{U(n)}}$ and $X_{U(n+1)}$ are independent for n $\geq$ 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.33-36
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina $(Al_2O_3)$ abrasive containing slurry with 5 % $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with 5 % $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• Applied Chemistry for Engineering
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• v.24 no.1
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• pp.93-98
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• 2013

In this paper, four conducting polymers (poly[(N-butyl-phenothiazine)-sulfide] (PBPS), poly[(N-hexyl-phenothiazine)-sulfide] (PHPS), poly[(N-decyl-phenothiazine)-sulfide] (PDPS), and poly[(N-(2-ethylhexyl)-phenothiazine)-sulfide] (PEHPS)) were synthesized with a high temperature and high pressure reaction. The structures of synthesized polymers were confirmed by $^1H-NMR$ and characterized by UV-Vis, cyclic voltammetry, and GPC. From the UV-Vis absorption spectra, the ${\lambda}_{max}$ values of PBPS, PHPS, PDPS, and PEHPS were 338, 341, 340, and 334 nm, respectively and their optical band gaps were 3.11, 3.13, 3.16, and 3.05 eV, respectively. To evaluate the feasible applicability as a photovoltaic cell, the devices composed of for example, ITO/PEDOT : PSS/polymer (PBPS, PDPS) : $PC_{71}BM$ (1 : 3, w/w)/$BaF_2$/Ba/Al were fabricated using the blends of the PBPS and PDPS as a donor, and $PC_{71}BM$ as an acceptor. Then, the power conversion efficiencies (PCE) of devices were estimated as 0.076% of PBPS and 0.136% of PDPS by solar simulator.

• Proceedings of the Korean Statistical Society Conference
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• 2002.05a
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• pp.55-60
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• 2002

We present an extension of the Wong-Zakai type approximation theorem for a multiple stochastic integral. Using a piecewise linear approximation $W^{(n)}$ of a Wiener process W, we prove that the multiple integral processes {${\int}_{0}^{t}{\cdots}{\int}_{0}^{t}f(t_{1},{\cdots},t_{m})W^{(n)}(t_{1}){\cdots}W^{(n)}(t_{m}),t{\in}[0,T]$} where f is a given symmetric function in the space $C([0,T]^{m})$, converge to the multiple Stratonovich integral of f in the uniform $L^{2}$-sense.

• Journal of the Korean Mathematical Society
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• v.43 no.5
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• pp.1047-1063
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• 2006

Let $\varepsilon_#(X)$ be the subgroups of $\varepsilon(X)$ consisting of homotopy classes of self-homotopy equivalences that fix homotopy groups through the dimension of X and $\varepsilon_*(X) $ be the subgroup of $\varepsilon(X)$ that fix homology groups for all dimension. In this paper, we establish some connections between the homotopy group of X and the subgroup $\varepsilon_#(X)\cap\varepsilon_*(X)\;of\;\varepsilon(X)$. We also give some relations between $\pi_n(W)$, as well as a generalized Gottlieb group $G_n^f(W,X)$, and a subset $M_{#N}^f(X,W)$ of [X, W]. Finally we establish a connection between the coGottlieb group of X and the subgroup of $\varepsilon(X)$ consisting of homotopy classes of self-homotopy equivalences that fix cohomology groups.