• 충청수학회지
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• 제31권3호
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• pp.281-285
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• 2018

Let $S_k(N)$ be the space of cusp forms of weight k for ${\Gamma}_0(N)$. We show that $S_k(N)$ is the direct sum of subspaces $S_k^+(N)$ and $S_k^-(N)$. Where $S_k^+(N)$ is the vector space of cusp forms of weight k for the group ${\Gamma}_0^+(N)$ generated by ${\Gamma}_0(N)$ and $W_N$ and $S_k^-(N)$ is the subspace consisting of elements f in $S_k(N)$ satisfying $f{\mid}_kW_N=-f$. We find generators spanning the space $S_k^-(N)$ from $Poincar{\acute{e}}$ series and give all linear relations among such generators.

• 한국전자통신학회논문지
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• 제3권2호
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• pp.79-85
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• 2008

다양한 무선통신 방식이 출현함에 따라 배터리 수명과, 저전력 동작이 중요시되면서 무선 통신용 LSI는 SI circuit을 이용하는 analog current-mode signal processing을 주목하고 있다. 그러나 SI (Switched-Current) circuit을 구성하는 current memory는 clock-feedthrough의 문제점을 갖는다. 본 논문에서는 current memory의 문제점인 clock-feedthrough의 일반적인 해결방안으로 CMOS switch의 연결을 검토하고, current memory 성능 개선의 설계방안을 제안하기 위하여 CMOS switch 간의 width의 관계를 도출하고자 한다. Simulation 결과, memory MOS의 width가 20um, input current와 bias current의 ratio가 0.3, CMOS switch nMOS의 width가 2~6um일 경우에 CMOS switch 간의 width는 $W_{Mp}=5.62W_{Mn}+1.6$의 관계로 정의되고, CMOS switch nMOS의 width가 6~10um일 경우에 CMOS switch 간의 width는 $W_{Mp}=2.05W_{Mn}+23$의 관계로 정의되는 것을 확인하였다. 이 때 정의된 MOS transistor의 관계는 memory MOS의 성능향상을 위한 설계에 유용한 지침이 될 것으로 기대된다.

• 유기물자원화
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• 제6권2호
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• pp.45-57
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• 1998

이 실험의 목적은 혼합된 제지 하수슬러지에 최적의 공극개선재로서 woodchips의 혼합비율을 설정하기 위한 것이다. 공극개선재는 제지슬러지와 하수슬러지(건물중 2:1)혼합물에 0(W-0), 20(W-20), 33(W-33), 50(W-50)%의 부피비로 혼합되었고 강제송풍에 의한 정체식으로 퇴비화를 실시하였다. 퇴비의 부숙도를 평가하기 위하여 이화학성 변화를 조사하였다. W-33과 W-50 처리구에서 온도는 퇴비화가 시작하자마자 상승하여 5일째 $60^{\circ}C$ 이상까지 이르렀다. 열수가용성 C/N율의 감소는 퇴비화 초기에 W-0과 W-20 처리구에 비해 W-33과 W-50 처리구에서 두드러졌다. 열수가용성 $NO_3{^-}-N$은 퇴비화 초기에 거의 변화를 보이지 않다가 퇴비화 20일 이후에 빠르게 증가하였으며 W-0 처리구가 그 증가량이 가장 적었다. G.I.값은 W-50 처리구에서 20일째, W-0은 30일째 이후 80이상으로 높아졌다. 이상의 결과를 토대로 공극개선재의 혼합은 33%이상이 합리적이었으나, 특히 W-50 처리구는 송풍에 의한 온도조절이 어려웠으며, 공극개선재의 구입 및 단가 그리고 생산되는 퇴비량을 고려한다면 공극개선재를 33% 혼합하는 것이 가장 이상적이다.

• 폴리머
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• 제25권6호
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• pp.803-810
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• 2001

새로운 개념의 초분지형 비선형 광학 고분자 (PE-Azo/Hyper)를 AB$_2$형의 기능기를 가지는 단량체 4-[N,N-bis(hydroxyethyl)amino-4'-formyl]azobenzene (CHO-DOH)으로부터 Knoevenagel 축중합 반응을 통하여 합성하였다. 겔크로마토그래피상에서 폴리스티렌을 기준시료로 측정된 중합체의 무게평균분자량은 M$_{w}$ =61,800 (M$_{W}$ /M$_{n}$=1.86)이었고 중합체의 용해도를 조사한 결과 1-methyl-2-pyrrolidinone, N,N-dimethylformamide 등의 반양자성극성 유기용매에 잘 녹았으며 따라서 이들 용매를 이용하여 양질의 박막성형이 가능하였다. 또한 열시차 분석법으로 중합체 PE-Azo/Hvper의 열적 성질을 조사한 결과 녹는점이 관찰되지 않아 무정형으로 판명되었으며 유리 전이 온도는 $121^{\circ}C$로 나타났다. 폴링에 의하여 극성 배향된 중합체 박막의 2차 비선형 계수를 Nd : YAG 레이저 (1064 nm)를 이용하여 Maker fringe 방법으로 측정한 결과 $d_{33}$= 25.4 pm/V로 비교적 높은 값을 나타내어 초분지형 고분자에서도 극성배향이 이루어져 비선형성이 발현됨을 관찰할 수 있었다.

• 천문학회지
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• 제38권2호
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• pp.257-260
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• 2005

We have mapped the W 3 giant molecular cloud in the $C^o\;^3P_1-^3 P_o$ ([CI]) line with the Mount Fuji Submillimeter-wave Telescope. The [CI] emission is extended over the molecular cloud, having peaks at three star forming clouds; W 3(Main), W 3(OH), and AFGL 333. The [CI] emission is found to be strong in the AFGL 333 cloud. We have also observed the $C^{18}O,\;CCS,\;N_2H^+$, and $H^{13}CO^+$ lines by using the Nobeyama Radio Observatory 45 m telescope. In the AFGL 333 cloud, we find two massive cores, which are highly gravitationally bound and have no sign of active star formation. The high [$C^o$]/[CO] and [CCS]/[$N_2H^+$] abundance ratios suggest that the AFGL 333 cloud is younger than the W 3(Main) and W 3(OH) clouds.

• 대한수학회보
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• 제58권6호
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• pp.1341-1354
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• 2021

Let r ≥ 2, and let k_i ≥ 2 for 1 ≤ i ≤ r. Mixed van der Waerden's theorem states that there exists a least positive integer w = w(k₁, k₂, k₃, …, k_r; r) such that for any n ≥ w, every r-colouring of [1, n] admits a k_i-term arithmetic progression with colour i for some i ∈ [1, r]. For k ≥ 3 and r ≥ 2, the mixed van der Waerden number w(k, 2, 2, …, 2; r) is denoted by w₂(k; r). B. Landman and A. Robertson [9] showed that for k < r < $\frac{3}{2}$(k - 1) and r ≥ 2k + 2, the inequality w₂(k; r) ≤ r(k - 1) holds. In this note, we establish some results on w₂(k; r) for 2 ≤ r ≤ k.

• 대한수학회보
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• 제21권2호
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• pp.99-106
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• 1984

J. Yeh has recently introduced the concept of conditional Wiener integrals which are meant specifically the conditional expectation E$^{w}$ (Z vertical bar X) of a real or complex valued Wiener integrable functional Z conditioned by the Wiener measurable functional X on the Wiener measure space (A precise definition of the conditional Wiener integral and a brief discussion of the Wiener measure space are given in Section 2). In [3] and [4] he derived some inversion formulae for conditional Wiener integrals and evaluated some conditional Wiener integrals E$^{w}$ (Z vertical bar X) conditioned by X(x)=x(t) for a fixed t>0 and x in Wiener space. Thus E$^{w}$ (Z vertical bar X) is a real or complex valued function on R$^{1}$. In this paper we shall be concerned with the random vector X given by X(x) = (x(s$_{1}$),..,x(s$_{n}$ )) for every x in Wiener space where 0=s$_{0}$ $_{1}$<..$_{n}$ =t. In Section 3 we will evaluate some conditional Wiener integrals E$^{w}$ (Z vertical bar X) which are real or complex valued functions on the n-dimensional Euclidean space R$^{n}$ . Thus we extend Yeh's results [4] for the random variable X given by X(x)=x(t) to the random vector X given by X(x)=(x(s$_{1}$).., x(s$_{n}$ )).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.97.2-97.2
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• 2018

This study formed a hard TiAlSiWN coating layer using Ti, Al, Si and W raw powders that were mechanically alloyed and refined. The TiAlSi and TiAlSiW coating targets were fabricated using a single PCAS process in a short time with the optimal sintering conditions. The coating targets were deposited on the WC substrate by forming coating layers using TiAlSiN and TiAlSiWN nitride nano-composite structures with an AIP process. The properties of the nitride nano-composite coating layers were compared according to the addition of W. The microstructure of the nitride nano-composite coating layer was analyzed, focusing on the distribution of the crystalline phases, amorphous phases ($Si_3N_4$), and growth orientation of the columnar crystal depending on the addition of W. The mechanical properties of the coating layers were exhibited a hardness of approximately $3,000kg/mm^2$ and adhesion of about 117.77N in the TiAlSiN. In particular, the TiAlSiWN showed excellent properties with a hardness of more than $4,300kg/mm^2$ and an adhesion of about 181.47N.

• 아동학회지
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• 제36권5호
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• pp.173-188
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• 2015

The main purpose of this study was to investigate the effects of a mother's big five personality factors and playfulness on maternal parenting behavior. The participants consisted of 270 mothers with young children, aged 3-6 years old. The subjects completed questionnaires on IPIP(International Personality Item Pool), PAS(Playfulness Scale for Adults) and Parenting Behavior. The results were as follows. First, regarding the relationships of the mother'personality and parenting behavior, higher levels of neuroticism(N) in the mothers resulted in lower levels of warmth acceptance(W A) in parenting behavior. Higher levels of extroversion(E), openness(O), agreeableness(A), and conscientiousness(C) resulted in higher levels of W A. In terms of the relationships of the mother's playfulness and parenting behavior, higher levels of playfulness resulted in higher levels of W A. and lower levels of permissiveness nonintervention(P N) and rejection restriction(R R). Second, N, E, C, and a maternal sense of humor had an effect in W A. C was found to have an effect in P N and N was observed to have an effect in R R.

• 전기전자학회논문지
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• 제23권1호
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.