• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.9 no.1
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• pp.1-18
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• 1973

For regulating the depth of midwater trawl nets towed at the optimum constant speed, the changes in the shape of warps caused by adding a weight on an arbitrary point of the warp of catenary shape is studied. The shape of a warp may be approximated by a catenary. The resultant inferences under this assumption were experimented. Accordingly feasibilities for the application of the result of this study to the midwater trawl nets were also discussed. A series of experiments for basic midwater trawl gear models in water tank and a couple of experiments of a commercial scale gears at sea which involve the properly designed depth control devices having a variable attitude horizontal wing were carried out. The results are summarized as follows: 1. According to the dimension analysis the depth y of a midwater trawl net is introduced by $$y=kLf(\frac{W_r}{R_r},\;\frac{W_o}{R_o},\;\frac{W_n}{R_n})$$) where k is a constant, L the warp length, f the function, and $W_r,\;W_o$ and $W_n$ the apparent weights of warp, otter board and the net, respectively, 2. When a boat is towing a body of apparent weight $W_n$ and its drag $D_n$ by means of a warp whose length L and apparent weight $W_r$ per unit length, the depth y of the body is given by the following equation, provided that the shape of a warp is a catenary and drag of the warp is neglected in comparison with the drag of the body: $$y=\frac{1}{W_r}\{\sqrt{{D_n^2}+{(W_n+W_rL)^2}}-\sqrt{{D_n^2+W_n}^2\}$$ 3. The changes ${\Delta}y$ of the depth of the midwater trawl net caused by changing the warp length or adding a weight ${\Delta}W_n$_n to the net, are given by the following equations: $${\Delta}y{\approx}\frac{W_n+W_{r}L}{\sqrt{D_n^2+(W_n+W_{r}L)^2}}{\Delta}L$$ $${\Delta}y{\approx}\frac{1}{W_r}\{\frac{W_n+W_rL}{\sqrt{D_n^2+(W_n+W_{r}L)^2}}-{\frac{W_n}{\sqrt{D_n^2+W_n^2}}\}{\Delta}W_n$$ 4. A change ${\Delta}y$ of the depth of the midwater trawl net by adding a weight $W_s$ to an arbitrary point of the warp takes an equation of the form $${\Delta}y=\frac{1}{W_r}\{(T_{ur}'-T_{ur})-T_u'-T_u)\}$$ Where $$T_{ur}^l=\sqrt{T_u^2+(W_s+W_{r}L)^2+2T_u(W_s+W_{r}L)sin{\theta}_u$$ $$T_{ur}=\sqrt{T_u^2+(W_{r}L)^2+2T_uW_{r}L\;sin{\theta}_u$$ $$T_{u}^l=\sqrt{T_u^2+W_s^2+2T_uW_{s}\;sin{\theta}_u$$ and $T_u$ represents the tension at the point on the warp, ${\theta}_u$ the angle between the direction of $T_u$ and horizontal axis, $T_u^2$ the tension at that point when a weights $W_s$ adds to the point where $T_u$ is acted on. 5. If otter boards were constructed lighter and adequate weights were added at their bottom to stabilize them, even they were the same shapes as those of bottom trawls, they were definitely applicable to the midwater trawl gears as the result of the experiments. 6. As the results of water tank tests the relationship between net height of H cm velocity of v m/sec, and that between hydrodynamic resistance of R kg and the velocity of a model net as shown in figure 6 are respectively given by $$H=8+\frac{10}{0.4+v}$$ $$R=3+9v^2$$ 7. It was found that the cross-wing type depth control devices were more stable in operation than that of the H-wing type as the results of the experiments at sea. 8. The hydrodynamic resistance of the net gear in midwater trawling is so large, and regarded as nearly the drag, that sweeping depth of the gear was very stable in spite of types of the depth control devices. 9. An area of the horizontal wing of the H-wing type depth control device was $1.2{\times}2.4m^2$. A midwater trawl net of 2 ton hydrodynamic resistance was connected to the devices and towed with the velocity of 2.3 kts. Under these conditions the depth change of about 20m of the trawl net was obtained by controlling an angle or attack of $30^{\circ}$.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• The Journal of the Petrological Society of Korea
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• v.27 no.3
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• pp.109-120
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• 2018

The distributional characteristics of fault segments in Cretaceous and Tertiary rocks from southeastern Gyeongsang Basin were derived. The 267 sets of fault segments showing linear type were extracted from the curved fault lines delineated on the regional geological map. First, the directional angle(${\theta}$)-length(L) chart for the whole fault segments was made. From the related chart, the general d istribution pattern of fault segments was derived. The distribution curve in the chart was divided into four sections according to its overall shape. NNE, NNW and WNW directions, corresponding to the peaks of the above sections, indicate those of the Yangsan, Ulsan and Gaeum fault systems. The fault segment population show near symmetrical distribution with respect to $N19^{\circ}E$ direction corresponding to the maximum peak. Second, the directional angle-frequency(N), mean length(Lm), total length(Lt) and density(${\rho}$) chart was made. From the related chart, whole domain of the above chart was divided into 19 domains in terms of the phases of the distribution curve. The directions corresponding to the peaks of the above domains suggest the directions of representative stresses acted on rock body. Third, the length-cumulative frequency graphs for the 18 sub-populations were made. From the related chart, the value of exponent(${\lambda}$) increase in the clockwise direction($N10{\sim}20^{\circ}E{\rightarrow}N50{\sim}60^{\circ}E$) and counterclockwise direction ($N10{\sim}20^{\circ}W{\rightarrow}N50{\sim}60^{\circ}W$). On the other hand, the width of distribution of lengths and mean length decrease. The chart for the above sub-populations having mutually different evolution characteristics, reveals a cross section of evolutionary process. Fourth, the general distribution chart for the 18 graphs was made. From the related chart, the above graphs were classified into five groups(A~E) according to the distribution area. The lengths of fault segments increase in order of group E ($N80{\sim}90^{\circ}E{\cdot}N70{\sim}80^{\circ}E{\cdot}N80{\sim}90^{\circ}W{\cdot}N50{\sim}60^{\circ}W{\cdot}N30{\sim}40^{\circ}W{\cdot}N40{\sim}50^{\circ}W$) < D ($N70{\sim}80^{\circ}W{\cdot}N60{\sim}70^{\circ}W{\cdot}N60{\sim}70^{\circ}E{\cdot}N50{\sim}60^{\circ}E{\cdot}N40{\sim}50^{\circ}E{\cdot}N0{\sim}10^{\circ}W$) < C ($N20{\sim}30^{\circ}W{\cdot}N10{\sim}20^{\circ}W$) < B ($N0{\sim}10^{\circ}E{\cdot}N30{\sim}40^{\circ}E$) < A ($N20{\sim}30^{\circ}E{\cdot}N10{\sim}20^{\circ}E$). Especially the forms of graph gradually transition from a uniform distribution to an exponential one. Lastly, the values of the six parameters for fault-segment length were divided into five groups. Among the six parameters, mean length and length of the longest fault segment decrease in the order of group III ($N10^{\circ}W{\sim}N20^{\circ}E$) > IV ($N20{\sim}60^{\circ}E$) > II ($N10{\sim}60^{\circ}W$) > I ($N60{\sim}90^{\circ}W$) > V ($N60{\sim}90^{\circ}E$). Frequency, longest length, total length, mean length and density of fault segments, belonging to group V, show the lowest values. The above order of arrangement among five groups suggests the interrelationship with the relative formation ages of fault segments.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.189-193
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• 2001

We have characterized physical and electrical properties of W-TiN stacked gate electrode structure with TiN as a diffusion barrier of fluorine. As the $N_2/Ar$ gas ratio increased during sputter deposition, TiN thin films became N-rich, and the resistivity of the films increased. However, the resistivity of W-TiN stacked gate reduced as a result of the crystallization of tungsten with the increase of $N_2/Ar$ gas ratio. On the other hand, tungsten in W-TiN stacked gate structure have the (100)-oriented crystalline structure although TiN films were subjected to annealing at high temperature (600~$800^{\circ}C$). Leakage currents of W-TiN gate MOS capacitors were less than $10^{-7}\textrm{/Acm}^2$ and also were lowered by the order of 2 compared with those of pure W gate electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.315-316
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• 2012

반도체와 금속배선의 확산을 방지하기 위한 확산방지막의 필요성이 대두되고 있으며, 이에 대한 연구는 많은 연구 그룹에서 진행중에 있다. 하지만 이러한 연구의 대부분은 전기적, 결정학적 특성에 대하여 안전성 및 재료학적 연구에 국한되어 진행되어졌다. 본 연구그룹은 텅스텐(W)을 질화시킨 W-N 확산방지막에 대하여 연구를 진행하였고, 역시 결정학적 특성에 대한 열적인 안전성을 주로 연구하였으나, 본 연구에서는 W-N 박막의 나노영역에 대한 기계적 특성 평가에 주안점을 두어 W-N 박막의 stress를 nano-indenter 기법을 이용하여 측정하고자하였다. 특히 공정시간의 단축 효과 등의 이유로 박막의 두께를 감소시키는 현재 추세에 맞춰 더 얇은 W-N 확산방지막을 제작하였으며, 이에 대한 분석을 실시하였다. W-N 확산방지막은 Ar(Argonne), $N_2$ (nitrogen) 총유량을 40 sccm으로 고정하여, 질소 유입 조건을 0, 0.5, 1 sccm 으로 변화시켜 Si (silicon) (100) 기판 위에 rf (radio-frequency) magnetron sputter를 이용하여 증착하였다. 이때 W-N 박막의 두께를 30, 100 nm로 달리하여 증착하였으며, 증착된 박막은 질소 분위기 $600^{\circ}C$에서 30분간 열처리하였다. 증착된 시료는 nano-indent를 통하여 표면으로부터 10 nm 부근의 극 표면 물성을 측정하였다. 측정 결과, $N_2$ 가스의 유량을 0.5 sccm 흘려주면서 증착한 W-N 박막이 $N_2$가스를 흘려주지 않은 W 박막과 비교하여 압축응력을 덜 받아 비교적 열에 대하여 안정적임을 확인하였다. 또 30 nm 두께의 W-N 박막이 100 nm 두께의 W-N 박막보다 더 기계적으로 안정적인 상태임을 확인하였다.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.345-349
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• 2005

Low resistive ($300{\mu}{\Omega}$-cm) W-C-N films have been deposited on tetraethylorthosilicate (TEOS) interlayer dielectric by atomic layer deposition (ALD) with $WF_6-N_2-CH_4$ gas. The exposure cycles of $N_2$ and $CH_4$ are synchronized with pulse plasma. The W-C-N films on TEOS layer follow the ALD mechanism and keep constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles. As a diffusion barrier for Cu interconnection the W-C-N films maintain amorphous phase and Cu inter-diffusion is not occurred even at $800^{\circ}C$ for 30 min.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.110-118
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• 1992

When CVD-W films deposited on the reactively sputter-deposited TiN(${\circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${\circled2}$), and the furnace-annealed TiN submitate (${\circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${\circled1}>{\circled2}>{\circled3}$ and incubation period of W nucleation is in the order of ${\circled1}{\leq}{\circled2}<{\circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.266-270
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• 2011

This paper suggest tungsten (W)-carbon (C)-nitrogen (N) thin films for diffusion barrier that W is main material and C and N are additives. W-C-N thin films are deposited with fixed rates of W and C but with a variation of $N_2$ gas flow and W-C-N thin films are heated at $600^{\circ}C$. From the experimental results, the variation of elastoplastic region for W-C-N thin film measured by tribological property is larger than that of elastic region with a variation of $N_2$ gas flow. These results show that the $N_2$ gas flow is more directly related with the elastoplastic region of W-C-N thin film. Nanoindenting test executed 16 times consecutively and we got the stress-strain curve graphs and hardness datas at each sample. Through the stress-strain curve graphs, the standard diviation of stress-strain curve for $N_2$ gas flow rate of 2.0 sccm is smaller than that of 0, 0.5, 1.5 sccm. Consequently, the physical stability of W-C-N thin film depends on the flow rate of $N_2$ gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.28-30
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• 1992

Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.

• Journal of the Korean earth science society
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• v.29 no.3
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• pp.255-262
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• 2008

Late Cretaceous to early Tertiary paleostress was evaluated by analyzing the healed microcracks in the Cretaceous granite of the Goheung area, south Korea. Healed microcracks in five granite samples (GH-1, GH-3, GH-4, GH-5, GH-8) were investigated and measured according to direction. The directions of maximum horizontal principal stress in GH-1, GH-3, and GH-4 are dominantly $N60^{\circ}W\;and\;N70^{\circ}E,\;N20^{\circ}W\;and\;N50^{\circ}W$, while minor directions are N-S and $N30^{\circ}E$. In GH-5 and GH-8, $N40^{\circ}E\;and\;N10^{\circ}E$ are the most dominant directions, while $N40^{\circ}W$ is the minor direction. Thus overall, the most dominant directions of healed microcracks in the study area are oriented $N60^{\circ}W$, while minor directions are oriented $N20^{\circ}W,\;N20^{\circ}E\;and\;N70^{\circ}E$, essentially NE. Combining the paleostress results of this study with other studies, the direction of the maximum horizontal principal stress in the study area during the late Cretaceous to the early Tertiary should perhaps be changed WNW to NE. The reason for this is thought to be the complex tectonic movements which occurred in northeast Asia at that time.