• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.215-221
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• 2005

Thermoelectric bismuth telluride thin films were prepared on $SiO_{2}$/Si substrate with co-sputtering of bismuth and tellurium targets. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above $290 ^{\circ}C$. Change of dominant phase from rhombohedral $Bi_2Te_3$ to hexagonal BiTe was confirmed with X-ray diffraction analysis. The deviation from stoichiometric composition at high deposition temperature resulted in the change of structural and electrical characteristics. Seebeck coefficients of all samples have negative value, indicating the prepared $Bi_XTe_Y$ films are n-type thermoelectric. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of $225 \^{circ}$C (about -55 $\mu$V/K and $3\times10^{-4}$ W/$k^{2}$m, respectively). Deterioration of thermoelectric properties at higher temperature.

• Journal of the Korean Society for Heat Treatment
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• v.15 no.3
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• pp.118-126
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• 2002

TiCN thin films were deposited on tool steels at $510^{\circ}C$ by PECVD from a $TiCl_4+N_2+CH_4+H_2+Ar$ gaseous mixture. The microstructures and preferred orientation were investigated. The micro-scratch tests were performed using a system equipped with an acoustic emission sensor. Critical loads were determined to evaluate the adhesion of TiCN to substrate. The influences of the microstructures of substrates, double layered coatings, and coatings after nitriding(duplex coating) were investigated. The experimental results showed that the microstructures of substrates and double layered coating did not affect the critical loads considerably. By the duplex coating, critical loads were not always increased. In some cases, duplex coatings decreased critical loads significantly despite of absence of black layer. In this study, we tried to relate the results of scratch test to the residual stress analysis. Nitriding before the coating reduces the tensile residual stress in the film, which gives rise to low critical load in scratch test.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.110-113
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• 2011

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 ${\mu}m$ $SiO_2$ dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from $650^{\circ}C$ to $750^{\circ}C$. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.470-470
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• 2013

Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.160-164
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• 2008

The Characterization of $MgB_2$ Thin Film by Slow Positron Annihilation Spectroscopy Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of $MgB_2$ superconductor film, which were performed at 30 K and 50 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values were increased then decreased while the positron implantation energies were increasing, that indicated the diffusion into the samples. The S-parameters of the anisotropic 1 ${\mu}m$ $MgB_2$ thin film which were implanted by positrons at 10 keV are 0.567 at 30 K and 0.570 at 50 K. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the $MgB_2$ superconductor.

• Journal of Magnetics
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• v.11 no.2
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• pp.70-73
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• 2006

The magnetization angle and thickness dependence of magnetic anisotropy in the exchange-biased [Pd/Co]${\times}$5/FeMn multilayers with an out-of-plane anisotropy were investigated to determine the origin of perpendicular exchange biasing. As the Co thickness increased to 1.5 nm in the [Pd(0.8 nm)/Co(t)]${\times}$5/FeMn(120 nm) films, the hysteresis loops were converted from square loops at a thin Co (<0.4 nm) to complicated round ones at a thick Co. The irregularly asymmetric step (IAS) at the left top of the loop appeared in the loop of the 0.6-nm Co film due to an inhomogeneity in the exchange anisotropy. As the Pd thickness increased to 1.6 nm, the step disappeared, and the perpendicular magnetic anisotropy was maximized in the Co thickness between 0.6 and 0.9 nm. The conversion of the magnetization loop along the magnetization angle coincided with the equation $H_{(eff)}=H_o\;cos{\theta}$. The IAS of the 0.8-nm Pd film disappeared after thermal annealing up to $200^{\circ}C$ under an external magnetic field.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.5-8
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• 2007

We have investigated the superconducting properties and surface morphology of $Sm_xBa_yCu_3O_{6+z}$ thin films deposited on LMO/IBAD-MgO/Hastelloy which prepared with different composition ratio by co-evaporation method(EDDC, Evaporation using Drum in Dual Chambers). We observed the composition ratio of SmBCO thin films by EDS analysis. We fabricated SmBCO thin film with critical current density of $1.5{\times}10^6A/cm^2$ at composition ratio of SM:Ba:Cu=1.10:2.01:3(at 77 K self-field). And, we confirmed that substitution of Sm-Ba did not occur at Cu rich phase by EDS analysis.

• Progress in Superconductivity and Cryogenics
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• v.18 no.4
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• pp.1-4
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• 2016

We investigated the relation between the Cu-O bond length and the superconducting properties of $BaSnO_3$ (BSO)-added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films by using extended x-ray absorption fine structure (EXAFS) spectroscopy. 4 wt.% $BaSnO_3$ (BSO) added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films with varying thickness from $0.2{\mu}m$ to $1.0{\mu}m$ were fabricated by using pulsed laser deposition (PLD) method. The transition temperature ($T_c$) and the residual resistance ratio (RRR) of the GdBCO films increased with increasing thickness up to $0.8{\mu}m$, where the crystalline BSO has the highest peak intensity, and then decreased. This uncommon behaviors of $T_c$ and RRR are likely to be created by the addition of BSO, which may change the ordering of GdBCO atomic bonds. Analysis from the Cu K-edge EXAFS spectroscopy showed an interesting thickness dependence of ordering behavior of BSO-added GdBCO films. It is noticeable that the ordering of Cu-O bond and the transition temperature are found to show opposite behaviors in the thickness dependence. Based on these results, the growth of BSO seemingly have evident effect on the alteration of the local structure of GdBCO film.