• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.7
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• pp.473-478
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• 2001

Ferroelectric P $b_{0.99}$［(Z $r_{0}$ 6S $n_{0.4}$)/0.9/ $Ti_{0.1}$］0.98/N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on L $a_{0.5}$S $r_{0.5}$Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films annealed at various temperature and time were investigated. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA). The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 %..10 %......

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.250-254
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• 2003

A film bulk acoustic resonator (FBAR) device for 2 GHz radio frequency (RF) bandpass filter application is presented. This FBAR device consists of an aluminum nitride (AlN) film sandwiched between top(Al) and bottom(Au) electrodes and an acoustic multilayer reflector of a silicon dioxide/tungsten (SiO2/W). The A/N film deposited using a RF sputtering was observed to have small columnar grains with a strongly preferred orientation towards c axis. In addition to a high quality factor (4300), a large return loss of 37.19 dB was obtained.

• Progress in Superconductivity
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• v.10 no.1
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• pp.35-39
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• 2008

By using the hybrid physical-chemical vapor deposition (HPCVD) technique, we have fabricated $MgB_2$ thick films on $Al_{2}O_3$ substrates with various impurity layers of Ni, Ti, and SiC. We have found a significant enhancement of the critical current density ($J_c$) for $MgB_2$ films grown on impurity layered substrates, indicating that additional impurity layers were provided as possible pinning sites by chemical doping in $MgB_2$ films. All samples doped by Ni, Ti, and SiC were observed to have high superconducting transition temperatures of 39 - 41 K. The $J_c$ of $MgB_2$ films grown on SiC impurity layered substrates showed three times higher than that of undoped films at high magnetic fields above 1 T.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.7-11
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• 2000

The anti-reflective anti-static (ARAS) optical film is designed using absorbent materials such as ITO, $TiN_xW_y$, Ag by Essential Macleod program. [air ${\mid}TiN_xW_y{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The reflectivity, transmittance of this coating are below 0.5%, about 75%, respectively. [air $SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$, ITO glass] layer can adjust reflectance of below 0.5% with above 97% transmittance. In the [air ${\mid}SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$ Ag glass] layer, the transmission can be controlled at above 96% with reflectance of 1~2%.

• Progress in Superconductivity
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• v.8 no.2
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• pp.127-131
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• 2007

We have measured the Hall conductivity (${\sigma}_{xy}$) of c-axis-oriented $MgB_2$ thin films as functions of temperatures and magnetic fields. We found that the Hall conductivity (${\sigma}_{xy}$) is expressed by the sum of two terms, ${\sigma}_{xy}=C_l/H+C_3H$, where the coefficient $C_1\;and\;C_3$ are independent of the magnetic fields and have positive values. The coefficient $C_1$ is strongly dependent on the temperature, while the $C_3$ is weakly dependent on the temperature. We have obtained that the $C_1$ is proportional to $(1- T/T_c)^n$ with n = 4.2, which is consistent with the data observed in $La_{2-x}Sr_xCuO_4$ superconductors with low anisotropy ratio.

• Progress in Superconductivity
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• v.10 no.2
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• pp.116-122
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• 2009

We introduce a measurement method that enables to measure the penetration depth($\lambda$) of superconductor films by using a short-ended parallel plate sapphire resonator. Variations in the $\lambda$ of $MgB_2$ films could be measured down to the lowest temperature using a sapphire resonator with a $YBa_2Cu_3O_{7-x}$ film at the bottom. A model equation of $\lambda=\lambda_0[1-(T/T_c)^{\tau}]^{-1/2}$ for $MgB_2$ films appeared to describe the observed variations of the resonant frequency of the sapphire resonator with temperature, with $\lambda_0,\;\tau$, and $T_C$ used as the fitting parameters.

• Progress in Superconductivity
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• v.9 no.2
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• pp.173-176
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• 2008

[ $MgB_2$ ] films grown by hybrid physical chemical vapor deposition under appropriate growth conditions commonly exhibit columnar grain structure. The grain boundaries between adjacent columnar grains have been reported to be good flux pinning centers. In this work, we measured the angular dependence of critical current density ($J_c$) and observed the enhanced flux pinning when an external magnetic field was aligned parallel to the columnar direction. This $J_c$ was almost comparable to the $J_c$ for intrinsic pinning case up to 1 T at low temperatures, indicating that grain boundary pinning is very effective. At high fields, however, $J_c$ decreased rapidly resulting from the fact that the density of flux pinning centers provided by grain boundaries was outnumbered by the flux density.

• Progress in Superconductivity
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• v.13 no.2
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• pp.90-96
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• 2011

We investigated the properties of artificial pinning centers of YBCO multilayer films in which $Y_2O_3$ and ZnO nanoparticles are uniformly introduced by using the pulsed laser deposition (PLD) technique. $Y_2O_3$ and ZnO nanoparticles were deposited on top of YBCO buffer layer and the density of nanoparticles was controlled by varying the number of nanoparticle layers. YBCO superconducting layers with total thickness of 250 nm were deposited on top of $Y_2O_3$ and ZnO nanoparticles. Based on analyses of the surface morphology, the transition temperature $T_c$, and the critical current density $J_c$, we discussed the difference between the two kinds of nanoparticles as flux pinning centers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.509-512
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• 2001

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.54-61
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• 2000

The structural and magnetic properties of sputtered CoNbZr alloy films were investigated. In the as-deposited $Co_{87.0}$N $b_{8.5}$Z $r_{4.5}$ film deposited at 2 mTorr and 130 W, we observed the minimum coercivity of 1.75 Oe, the maximum resistivity of 3000 $\mu$Ω.cm and permeability of 1095 at 100 MHz. As the Ar pressure or the RF input power increased, the permeability of films at 100 MHz decreased and the coercivity increased because of the development of columnar structure and the formation of unstable amorphous phase. Permeability lower than 100 and coercivity of 60 Oe were observed in film deposited at 1 mTorr or 190 W due to the formation of crystalline phase. Magnetic anisotropy field of as-deposited films could be reduced by rotating field annealing for 120 minutes at 30$0^{\circ}C$. After the annealing, the anisotropy field (Hk) decreased from 1.43 Oe to 0.3 Oe and the permeability increased from 1095 to 1345 because defects in as-deposited films were eliminated by the annealing.aling.