• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.6
• /
• pp.515-520
• /
• 2005

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. Also CMP process got into key process for global planarization in the chip manufacturing process. In this study, potentiodynamic polarization was carried out to investigate the influences of $H_2O_2$ concentration and metal oxide formation through the passivation on tungsten and titanium. Fortunately, the electrochemical behaviors of tungsten and titanium are similar, an one may expect. As an experimental result, electrochemical corrosion of the $5\;vol\%\;H_2O_2$ concentration of tungsten and titanium films was higher than the other concentrations. According to the analysis, the oxidation state and microstructure of surface layer were strongly influenced by different oxidizer concentration. Moreover, the oxidation kinetics and resulting chemical state of oxide layer played critical roles in determining the overall CMP performance. Therefore, we conclude that the CMP characteristics tungsten and titanium metal layer including surface roughness were strongly dependent on the amounts of hydrogen peroxide oxidizer.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2009.06a
• /
• pp.95-96
• /
• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.11a
• /
• pp.153-154
• /
• 2010

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.362-365
• /
• 2005

Currently Chemical Mechanical Planarization (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. Especially the CMP pad conditioner, one of the diamond tools, is required to have strong diamond retention. Strong cohesion between diamond grits and metal matrix prevents macro scratch on the wafer. If diamond retention is weak, the diamond will be pulled out of metal matrix. The pulled diamond grits are causative of macro scratch on wafer during CMP process. Firstly, some results will be reported of cohesion between diamond grits and metal matrix on the diamond tools prepared by three different manufacturing methods. A measuring instrument with sharp cemented carbide connected with a push-pull gauge was manufactured to measure the cohesion between diamond grits and metal matrix. The retention force of brazed diamond tool was stronger than the others. The retention force was also increased in proportion to the contact area of diamond grits and metal matrix. The brazed diamond tool has a strong chemical combination of the interlayer composed of chrome in metal matrix and carbon which enhance the interfacial cohesion strength between diamond grits and metal matrix. Secondly, we measured real-time data of the coefficient of friction and the pad wear rate by using CMP tester (CETR, CP-4). CMP pad conditioner samples were manufactured by brazed, electro-plated and sintered methods. The coefficient of friction and the pad wear rate were shown differently according to the arranged diamond patterns. Consequently, the coefficient of friction is increased according as the space between diamonds is increased or the concentration of diamonds is decreased. The pad wear rate is increased according as the degree of diamond protrusion is increased.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1996.11a
• /
• pp.167-171
• /
• 1996

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily achieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etchback process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurement of planarity. Moreover, it will contribute to analyze planarization characteristics and establish CMP model.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.05a
• /
• pp.239-239
• /
• 2004

화학적 기계연마 공정(CMP)은 반도체 웨이퍼를 수 천$\AA$m/min의 MRR로 2$\mu\textrm{m}$ 이내의 W(Total Thickness Variable) 조건을 만족시키는 초정밀 광역 평탄화 기술이다. 일반적인 CMP 방법은 서로 다른 회전 중심을 갖고 동일한 방향으로 회전하는 웨이퍼와 다공성 패드 사이에 연마액인 슬러리를 넣어 연마하는 것이다. CMP 공정기술은 1990년 대 중반에 개발되었으나, 아직까지 연마 메커니즘이 완벽하게 밝혀지지 않았다. 따라서 장비를 최적화하기 위해 실험에 의존적일 수밖에 없으나, 이러한 방법은 막대한 자금과 노력뿐만 아니라 상당한 시간을 필요로 하기 때문에, 앞으로 가속될 연마대상 재료의 변화 및 다양한 속도에 발맞출 수 없다.(중략)

• Asian-Australasian Journal of Animal Sciences
• /
• v.23 no.2
• /
• pp.246-252
• /
• 2010

In order to improve the availability of phytase and probiotics together, a phytase gene from Aspergillus ficuum has been expressed in Lactobacillus. In this study, the transformed Lactobacillus with phytase gene was fed to pigs to determine its effect on pig production, feed conversion and gut microbes. Forty eight, 60-day-old, castrated pigs (Duroc${\times}$Landrace${\times}$Pietrain) were assigned to 6 groups, 8 pigs for each group. Group 1 was the control, group 2 was added with chlortetracycline (500 mg/kg), group 3 was added with the transformed Lactobacillus (500 mg/kg) with 20% (w/w) of calcium monohydrogen phosphate (CMP, $CaHPO_{4}$) removed, group 4 was added with the natural Lactobacillus (500 mg/kg) with 20% (w/w) of CMP removed, group 5 was added with the transformed Lactobacillus (500 mg/kg) with 40% (w/w) of CMP removed, group 6 was added with phytase (500 mg/kg) with 40% (w/w) of CMP removed. The results showed: i) the average daily gain (ADG) was improved in groups 2, 3 and 4 (p<0.05); ii) the diarrhea rates in the groups added with Lactobacillus were lower than in the other groups (p<0.05), in which the transformed Lactobacillus had more effect on reducing digestive disease; iii) the transformed Lactobacillus was most effective in improving the digestibilities of crude protein (CP), calcium (Ca), phosphorus (P), compared with the other groups (p<0.05); iv) Lactobacillus could increase lactic acid bacterium number and ammonia concentrations, and decrease pH values and E. coli number in pig feces (p<0.05); v) the phytase activity in the feces of pigs fed with the transformed Lactobacillus was 133.32 U/g, which was higher than in group 4 (9.58 U/g, p<0.05), and was almost the same as group 6 (135.94 U/g); vi) the transformed Lactobacillus could increase serum concentrations of IgA, triglyceride, and glutamic oxaloacetic transaminase activity (p<0.05), and had no significant effect on other serum indexes (p>0.05).

• Korean Journal of Materials Research
• /
• v.16 no.12
• /
• pp.731-738
• /
• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• Journal of the Korean Vacuum Society
• /
• v.9 no.2
• /
• pp.102-109
• /
• 2000

It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.12
• /
• pp.76-82
• /
• 1997

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily ahieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etch-back process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurment of planarity. mOreover, it will contribute to analyze planarization characteristics and establish CMP model.