• Journal of the Korean Society of Safety
• /
• v.15 no.1
• /
• pp.86-92
• /
• 2000

Recently, more advanced electronic elements become, they consume powerful and radiate more heat in devices. So the most suitable packaging technique is keenly needed. The most important purpose of packaging is to protect devices within a system for a long time and to prevent life of devices from external environments; floating ions such as humidity or sodium, and exposure from ultraviolet rays. In order to study the electrical properties of silicone gels often used as packing material due to the curing condition, volume resistivity and AC breakdown experiment are performed. Specimens are made up at several cured times and temperatures condition ; 0.5[H], 1[H] and 2[H] at 100[$^{\circ}C$], 125[$^{\circ}C$], 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$] and 180[$^{\circ}C$]. It is confirmed that from volume resistivity experiment liquid silicone become get state at 90~100 [$^{\circ}C$] and cured specimen for 1~2[H] at 170[$^{\circ}C$] are superior in electrical properties.

• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.756-762
• /
• 1997

In this paper the change of electrical properties of transformer oil due to electron beam irradiation is investigated. The specimens are produced with a some different dose of 0.5[Mrad], 1[Mrad] and 2[Mard] except for original specimen. The physical properties of each specimen is analyzed by using the FT-IR spectrum. So it is confirmed that carbonyl groups are increased according to the increase of electron beam dose and also that the nitric compounds are disappeared. The magnitude of dielectric dissipation factor appears maximum value by the contribution of dipoles and ions in the low temperature low voltage region and it is stable due to the saturation of carriers in the high temperature high voltage region in the electric conduction characteristics. Volume resistivity is also measured one of original specimen is larger than irradiated specimen.

• Polymer(Korea)
• /
• v.31 no.5
• /
• pp.422-427
• /
• 2007

Semiconducting layers are thin rubber film between electrical cable wire and insulating polymer layers having a volume resistivity of ${\sim}10^2{\Omega}cm$. Commercial semiconducting layers ire composed of polymer composites reinforced with more than 30 wt% of carbon blacks. A new semiconducting material was suggested in this study based on the carbon nanotube(CNT)-reinforced polymer nanocomposites. CNT-reinforced polymer nanocomposites were prepared by solution mixing and precipitation with various polymer type and dual filler system. The mechanical, thermal and electrical properties were investigated as a function of polymer type and dual filler system based on CNT and carbon black. The volume resistivity of composites was strongly related with the crystallinity of polymer matrix. With the decreased crystallinity, the volume resistivity decreased linearly until a critical point, and it remained constant with further decreasing the crystallinity. Dual filler system also affected the volume resistivity. The CNT-reinforced nanocomposite showed the lowest volume resistivity. When a small amount of carbon black(CB) was replaced the CNT, the crystallinity increased considerably leading to a higher volume resistivity.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.5
• /
• pp.267-270
• /
• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.6
• /
• pp.525-532
• /
• 2001

In this paper, physical properties and electrical characteristics of linear low density polyethylene(LLDPE) films blended with ethylene vinyl acetate(EVA), containing polar groups within it, were investigated to improve defects of polyethylene(PE) such like space charge accumulation and tree growth. Blending method changes super-structure of LLDPE, having a great influence on electrical characteristics. For analysis of physical properties, FTIR, XRD and DSC methods were executed, and for electrical characteristics, volume resistivity and dielectric strength were measured with the varying temperature. From the results, it is confirmed that bled specimens tend to be safe to varying temperature, and specially of 70:30 and 50:50 have a good performance.

• Journal of Sensor Science and Technology
• /
• v.16 no.3
• /
• pp.229-233
• /
• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.382-385
• /
• 1995

Electrical properties such as tracking resistance, dielectric constant, $tan\delta$, and volume resistivity, and mechanical properties such as tensile, and strength, and % elongation were measured with the alumina trihydrate filled with EPDM. The results were dicussed in terms of the effect of hydroxyl group. The test results show that the tracking resistance of EPDM improves with the increase in ATH content, whereas volume resistivity, dielectric constant, $tan\delta$ decrease wi th increasing ATH content due to polar nature of ATH. In the charge accumulation characteristics, the homocharge is formed in pure EPDM, and as the ATH content increases in the EPDM compound, the amount of homocharge decrease.

• Journal of the Korean Society of Safety
• /
• v.15 no.4
• /
• pp.41-46
• /
• 2000

Silicone rubbers are elastomeric materials and organic copolymers, of which backbone is siloxane with high bonding strength. Silicone rubbers have been used as an power insulator because they are well weather proof, ozone proof and have excellent electric characteristics, thermal stability, cold resistance and low surface energy. Especially, it is known that they have very excellent characteristics at 200[$^{\circ}C$]. For this study, we made silicone rubbers as specimens and measured volume resistivity due to applied voltage and a variation of temperature 25[$^{\circ}C$] to 180[$^{\circ}C$]. Also we measured dielectric loss tangent due to applied voltage at temperature range 25[$^{\circ}C$] to 180[$^{\circ}C$] and frequency range 20[Hz] to 1${\times}10^6$[Hz].

• Korean Journal of Materials Research
• /
• v.17 no.4
• /
• pp.232-235
• /
• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.591-593
• /
• 2003

Silicone composites for high voltage insulator(HVI SC) were prepared by adding aluminum trihydrate(ATH) treated by surface treatment agent to base silicone compound at the ratio of 100:20, 100:40, 100:60, 100:80, and 100:100, respectively. And also, ATH was treated by various surface treatment agents, such as stearic acid, acryl silane vinyl silane under compounding process. electrical properties were investigated for the various contents of ATH and solace-treatment agents we mlas ured volume resistivity, breakdown and tracking resistance were for HVISC containing ATH treated by viuyl silane.