• Journal of Electrical Engineering and Technology
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• v.13 no.3
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• pp.1392-1397
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• 2018

The potentiometric measurement result for a high resistance up to $100P{\Omega}$ using a low resistance, a low voltage source and a commercial digital multimeter(DMM) is presented. With the method, a resistance can be easily, fast and economically measured. Using the method, resistance ranges over the $10G{\Omega}$ range which is difficult to measure using a commercial DMM and resistance ranges between $100T{\Omega}$ and $100P{\Omega}$ which cannot measure using an insulation tester were measured within accuracy of a few percent. It is expected that it can be useful to determine the temperature and voltage effect of a high resistance and an insulation material because it uses a reference resistance with a low resistance, very low temperature and voltage effect. Besides, it is expected that it can be useful to calibrate a dc high voltage divider with a large resistance ratio and a very low resistance because arbitrary resistance ratio measurements are possible with it.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.449-455
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• 2004

This paper presents a novel defect detection method for one chip RF front end with fault detection circuits using input matching measurement. We present a BIST circuit using 40.25{\mu}m$ CMOS technology. We monitor the input transient voltage of the RF front end to differentiate faulty and fault-free RF front end. Catastrophic as well as parametric variation fault models are used to simulate the faulty response of the RF front end. This technique has several advantages with respect to the standard approach based on current test stimulus and frequency domain measurement. Because DUT and fault detection circuits are implemented in the same chip, this test technique only requires use of digital voltmeter (RMS meter) and RF voltage source generator for simpleand inexpensive testing.