• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.101-105
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• 2001

고압용 가교 Polyethylene 절연 케이블의 도체와 절연체 사이, 절연체와 외부 차폐층 사이에는 계면에서의 부분방전을 방지하고 전기적 스트레스를 완화할 목적으로 반도전층이 설계되어 있다. 이 반도전층의 성질은 케이블의 품질과 신뢰성에 매우 중요한 관련이 있다. 일반적으로 반도전층은 압출 성형하는데 Base Polymer에 다량의 카본블랙을 혼합하여 도전화 한다. 절연층과 반도전층간 계면의 평활도는 전력 케이블의 수명과 깊은 관계가 있는데 만약 평활도가 좋지 않으면 전기적 Stress 가 증가하여 전선 수명이 짧아진다. 계면 평활도를 나쁘게 하는 주 요인은 계면의 Void, 반도전층의 돌기와 이물, 탄화물 등이다. 반도전 Compound 제조에 있어서 Carbon Black의 선택과 분산성은 전선수명을 결정하는 중요한 요소이다.

• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.1-4
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• 2006

White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• Current Photovoltaic Research
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• 제1권1호
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• pp.44-51
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• 2013

For preparing a device-quality $CuInSe_2$ (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an $In_2Se_3$ film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of $CuCl_2$, $InCl_3$, and $SeO_2$, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the $In_2Se_3$ film with proper concentrations of complexing/buffering agents exhibited thickness of $1.6{\sim}1.8{\mu}m$ with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake-shape $Cu_{2-x}Se$ phases or sparse pores in the upper part of film.

• 수면정신생리
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• 제17권2호
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• pp.75-84
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• 2010

The cyclic alternating pattern (CAP) is a periodic EEG activity in NREM sleep, characterized by sequences of transient electrocortical events that are distinct from background EEG activities. A CAP cycle consists of two periodic EEG features, phase A and subsequent phase B whose durations are 2-60 s. At least two consecutive CAP cycles are required to define a CAP sequence. The CAP phase A is a phasic EEG event, such as delta bursts, vertex sharp transients, K-complex sequences, polyphasic bursts, K-alpha, intermittent alpha, and arousals. Phase B is repetitive periods of background EEG activity. The absence of CAP more than 60 seconds or an isolated phase A is classified as non-CAP. Phase A activities can be classified into three subtypes (A1, A2, and A3), based on the amounts of high-voltage slow waves (EEG synchrony) and low-amplitude fast rhythms (EEG desynchrony). CAP rate, the percentage of CAP durations in NREM sleep is considered to be a physiologic marker of the NREM sleep instability. In insomnia, the frequent discrepancy between self-reports and polysomnographic findings could be attributed to subtle abnormalities in the sleep tracing, which are overlooked by the conventional scoring methods. The conventional scoring scheme has superiority in analysis of macrostructure of sleep but shows limited power in finding arousals and transient EEG events that are major component of microstructure of sleep. But, it has recently been found that a significant correlation exists between CAP rate and the subjective estimates of the sleep quality in insomniacs and sleep-improving treatments often reduce the amount of CAP. Thus, the extension of conventional sleep measures with the new CAP variables, which appear to be the more sensitive to sleep disturbance, may improve our knowledge on the diagnosis and management of insomnia.

• 전자공학회논문지D
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• 제35D권3호
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• pp.39-45
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• 1998

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.121-122
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• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TITs performance. Transfer characteristics of n-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of $2-30{\mu}m$ has been investigated. In this paper, we analyzed the data of n-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current (I_{DSAT}$), and transconductance ($g_m$) of n-channel poly-Si thin film transistors with various channel lengths and widths.

• Journal of Magnetics
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• 제16권3호
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• pp.211-215
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• 2011

The dynamic magnetostriction characteristics of an Fe-based nanocrystalline FeCuNbSiB alloy are investigated as a function of the dc bias magnetic field. The experimental results show that the piezomagnetic coefficient of FeCuNbSiB is about 2.1 times higher than that of Terfenol-D at the low dc magnetic bias $H_{dc}$ = 46 Oe. Moreover, FeCuNbSiB has a large resonant dynamic strain coefficient at quite low Hdc due to a high mechanical quality factor, which is 3-5 times greater than that of Terfenol-D at the same low $H_{dc}$. Based on such magnetostriction characteristics, we fabricate a new type of transducer with FeCuNbSiB/PZT-8/FeCuNbSiB. Its maximum resonant magnetoelectric voltage coefficient achieves ~10 V/Oe. The ME output power reaches 331.8 ${\mu}W$ at an optimum load resistance of 7 $k{\Omega}$ under 0.4 Oe ac magnetic field, which is 50 times higher than that of the previous ultrasonic-horn-substrate composite transducer and it decreases the size by nearly 86%. The performance indicate that the FeCuNbSiB/PZT-8/FeCuNbSiB transducer is promising for application in highly efficient magnetoelectric energy conversion.

• 한국자기학회지
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• 제19권3호
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• pp.94-99
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• 2009

Pulsed Laser Deposition 방법으로 합성된 $La_{0.7}Ca_{0.3}MnO_3$ 박막의 물리적 특성을 증착 조건에 따라 조사하였다. 기존에 알려진 바와는 매우 달리 매우 낮은 산소 분압 ($1.0{\times}10^{-5}$, $1.0{\times}10^{-6}Torr$)에서도 큐리 온도가 높은 박막의 합성이 이루어졌으며 이는 박막의 합성 과정에서 쳄버 내부의 산소 분압보다는 플라즈마 plume의 모양과 그 내부 물질들의 운동에너지가 박막의 질을 결정하는 매우 중요한 요소임을 의미한다. 이러한 양질 박막의 합성 증착 조건을 이용하여 $La_{0.7}Ca_{0.3}MnO_3$ 을 Nb가 도핑된 $SrTiO_3$ 기판위에 증착함으로써 p-n 접합을 제작하였으며 이의 전류-전압곡선이 정류 특성을 보였고 그 모양은 자기장에 의해 바뀔 수 있음을 확인하였다.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.