• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• 전력전자학회논문지
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• 제3권4호
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• pp.365-374
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• 1998

본 연구에선는 고조파 저감효과가 크고 실시간 제어가 가능하도록 근사화된 3레벨 SHE PWM 방식을 제안하였다. SHE PWM 방식으로 특정 고조파를 제거할 수 있는 스위칭 각을 얻으면 기본파 전압의 크기에 따라 불연속적이고 비선형적인 분포를 이루게 되어 실시간제어에의 적용이 어려우므로 이들 비선형적인 분포를 부분적으로 근사화시킨 직선방식을 얻고 직선방정식의 계수들의 집합을 하나의 조견표로 작성하여 새로운 SHE PWM 스위칭 각 분포를 얻었다. 이때 인버터 dc 링크 전압의 변동을 보상할 수 있도록 인버터 출력 기본파전압과 직류전원 전압의 비를 일정하게 유지시켜며, 이렇게 새로이 얻어진 SHE PWM에 의한 스위칭 패턴을 3레벨 인버터에 적용하여 유도전동기를 운전할 때 인버터 출력전압의 고조파분포를 해석하였다. 또한 시뮬레이션을 통한 전동기 전류의 고조파 왜곡 및 토크리플 특성도 해석하여 제안한 3레벨 근사화 SHE PWM 방식의 고조파 저감효과가 3레벨 SPWM 방식의 결과와 비교하여 우수하며, 직류링크전압 변동에 대한 보상이 이루어짐을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.197-199
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• 2002

The invention of VHDL(Very High Speed Integrated Circuit Hardware Description Language), Technical language of Hardware, is a kind of turning point in digital circuit designing, which is being more and more complicated and integrated. Because of its excellency in expression ability of hardware, VHDL is not only used in designing Hardware but also in simulation for verification, and in exchange and conservation, composition of the data of designs, and in many other ways. Especially, It is very important that VHDL is a Technical language of Hardware standardized by IEEE, intenational body with an authority. The biggest problem in modern circuit designing can be pointed out in two way. One is a problem how to process the rapidly being complicated circuit complexity. The other is minimizing the period of designing and manufacturing to survive in a cutthroat competition. To promote the use of VHDL, more than a simple use of simulation by VHDL, it is requested to use VHDL in composing logical circuit with chip manufacturing. And, by developing the quality of designing technique, it can contribute for development in domestic industry related to ASIC designing. In this paper in designing SMPS(Switching mode power supply), programming PWM by VHDL, it can print static voltage by the variable load, connect computer to chip with byteblaster, and download in Max(EPM7064SLCS4 - 5)chip of ALTER. To achieve this, it is supposed to use VHDL in modeling, simulating, compositing logic and product of the FPGA chip. Despite its limit in size and operating speed caused by the specific property of FPGA chip, it can be said that this method should be introduced more aggressively because of its prompt realization after designing.

• 한국진공학회지
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• 제16권5호
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• pp.338-342
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• 2007

MgO는 플라즈마 디스플레이 패널 (Plasma Display Panel, PDP)의 보호막으로 널리 쓰이고 있다. 본 실험에서는 산소 이온 빔을 이용하여 증착된 MgO 보호막의 특성을 조사하였다. MgO 증착 시 보조 산소 이온 빔의 에너지를 변화시킴에 따라 MgO 보호막의 특성과 PDP 패널 발광특성에 미치는 영향을 분석하였다. 본 연구에서는 산소 이온 에너지가 300 eV 일 때 소자의 방전개시전압이 가장 낮게 나타났고, 발광 휘도 및 발광 효율은 가장 높게 나타났다. 또한 산소 이온 빔의 조사에너지에 따라 MgO 박막의 결정성 및 표면조도가 크게 영향을 받는 것을 확인할 수 있었다. 산소 이온 빔 보조 증착 방법을 이용하여 패널의 발광 휘도와 발광 효율 등 발광특성을 개선하였다.

• 대한방사선기술학회지:방사선기술과학
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• 제30권3호
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• pp.245-250
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• 2007

진단용 방사선발생장치에서의 X선 에너지와 $^{99m}Tc$-MDP, $^{18}F$-FDG의 감마선 에너지 대한 apron 0.25, 0.5 mmPb에 대한 차폐율을 측정하였다. X선 에너지는 관전압 $40{\sim}120\;kVp$ 범위 내에서 부가여과판 0, 2 mmAl을 사용 한 경우에 실효에너지가 $26.2{\sim}45.6\;keV$로 측정되었으며, 이때 apron 0.5 mmPb은 0.25 mmPb보다 최대 선질에서 5.5% 정도 차폐율이 증가하였다. 또한 두 종류의 apron은 직접선과 공간선량률에 대하여 90% 이상의 높은 차폐율을 나타내었다. 그리고 $^{99m}Tc$-MDP의 140 keV에서 0.25, 0.5 mmPb apron을 사용할 경우 $30{\sim}53%$ 정도의 차폐효과가 있었으며, $^{18}F$-FDG의 511 keV의 높은 에너지에서는 $1.3{\sim}3.6%$로 apron의 차폐효과가 매우 적었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.470-470
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• 2012

Organic thin film transistors (OTFTs) backplane constitute the active elements in new generations of plastic electronic devices for flexible display. The overall OTFTs performance is largely depended on the properties and quality of each layers of device material. In solution based process of organic semiconductors (OSCs), the interface state is most impediments to preferable performance. Generally, a threshold voltage (Vth) shift is usually exhibited when organic gate insulators (OGIs) are exposed in an ambient air condition. This phenomenon was caused by the absorbed polar components (i.e. oxygen and moisture) on the interface between OGIs and Soluble OSCs during the jetting process. For eliminating the polar component at the interface of OGI, the role of high vacuum seasoning on an OGI for all solution processable OTFTs were studied. Poly 4-vinly phenols (PVPs) were the material chosen as the organic gate dielectric, with a weakness in ambient air. The high vacuum seasoning of PVP's surface showed improved performance from non-seasoning TFT; a $V_{th}$, a ${\mu}_{fe}$ and a interface charge trap density from -8V, $0.018cm^2V^{-1}s^{-1}$, $1.12{\times}10^{-12}(cm^2eV)^{-1}$ to -4.02 V, $0.021cm^2V^{-1}s^{-1}$, $6.62{\times}10^{-11}(cm^2eV)^{-1}$. These results of OTFT device show that polar components were well eliminated by the high vacuum seasoning processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.482-483
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• 2011

Graphene is a good candidate for the future nano-electronic materials because it has excellent conductivity, mobility, transparency, flexibility and others. Until now, most graphene researches are focused on the nano electronic device applications, however, biological application of graphene has been relatively less reported. We have fabricated a deoxyribonucleic acid (DNA) conjugated graphene field-effect transistor (FET) and measured the electrical transport characteristics. We have used graphene sheets grown on Ni substrates by chemical vapour deposition. The Raman spectra of graphene sheets indicate high quality and only a few number of layers. The synthesized graphene is transferred on top of the substrate with pre-patterned electrodes by the floating-and-scooping method [1]. Then we applied adhesive tapes on the surface of the graphene to define graphene flakes of a few micron sizes near the electrodes. The current-voltage characteristic of the graphene layer before stripping shows linear zero gate bias conductance and no gate operation. After stripping, the zero gate bias conductance of the device is reduced and clear gate operation is observed. The change of FET characteristics before and after stripping is due to the formation of a micron size graphene flake. After combined with 30 base pairs single-stranded poly(dT) DNA molecules, the conductance and gate operation of the graphene flake FETs become slightly smaller than that of the pristine ones. It is considered that DNA is to be stably binding to the graphene layer due to the ${\pi}-{\pi}$ stacking interaction between nucleic bases and the surface of graphene. And this binding can modulate the electrical transport properties of graphene FETs. We also calculate the field-effect mobility of pristine and DNA conjugated graphene FET devices.

• 한국전자파학회논문지
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• 제27권1호
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• pp.20-26
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• 2016

본 논문에서는 GaN-HEMT를 이용하여 X-대역에서 동작하는 이단으로 구성된 전력증폭기를 설계 및 제작하였다. 높은 전력 이득을 얻기 위해 간단한 구조의 중간 단 정합 네트워크를 통해 이단으로 구성하였다. 3D EM 시뮬레이션을 통하여 본드와이어 인덕턴스와 기생 캐패시턴스를 예측하였다. 본드와이어 인덕턴스를 줄임으로써 정합 네트워크의 Q(quality-factor)를 최소화하여 대역 특성을 향상시켰다. 제작된 전력증폭기는 40 V의 동작 전압을 인가하였으며, 8.1~8.5 GHz에서 16 dB 이상의 전력 이득, 42.5 dBm 이상의 출력 전력, 35 % 이상의 효율 특성을 나타냈다.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.838-842
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• 2006

0.03Pb$(Sb_{0.5}Nb_{0.5})O_{3}-0.03Pb(Mn{1/3}Nb{2/3)O_{3}-(0.94-x)PbTiO_{3}-xPbZrO_{3}$ ceramics doped with $CeO_{2}$ were synthesized by conventional bulk ceramic processing technique. Phases analysis, microstructures and piezoelectric properties were investigated as a function of $CeO_{2}$ content (0.03, 0.05, 0.1 0.3, 0.5 and 0.7 wt%). Microstructures and phases information were characterized using a scanning electron microscope (SEM) and an X-ray diffractometer (XRD). Mechanical quality factor ($Q_{m}$) and coupling factor(kp) were obtained from the resonance measurement method. Both $Q_{m}$ and $k_{p}$ were shown to reach to the maximum at 0.1 wt% $CeO_{2}$. In order to evaluate the stability of resonance frequency and effective electromechanical coupling factor ($K_{eff}$) as a function of $CeO_{2}$, the variation of resonance and anti-resonance frequency were also measured using a high voltage frequency response analyzer under various alternating electric fields from 10 V/mm to 80 V/mm. It was shown that the stability of resonance frequency and effective electromechanical coupling factor were increased with increasing the $CeO_{2}$ contents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.