• Title/Summary/Keyword: Voltage integration method

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Automated Inductance Measurement of a Switched Reluctance Motor Using Voltage Integration Method (전압적분법을 이용한 SRM의 자동화된 인덕턴스 측정)

  • Noh, Jeongmin;Kim, Jaehyuck
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.8
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    • pp.1180-1185
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    • 2015
  • This paper describes the accurate inductance measurement of a switched reluctance motor (SRM). Conventionally, the inductance of the SRM is measured using the equivalent circuit of a stator phase or time constant of exponential current transient. This paper presents an effective method to measure the SRM inductance accurately and rapidly using automated voltage integration. The proposed method is validated experimentally by comparison with the existing equivalent circuit method (ECM) and the FEA(finite element analysis) simulation.

Adaptive Harmonic Control against DC Input Voltage Fluctuation of PWM Inverter by Instantaneous Integration (순시적분에 의한 PWM인버어터의 직류 입력전압 맥동에 대한 고조파 적응제어)

  • Park, Sung-Jun;Kwon, Y.A.;Kim, Cheul-U
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.721-723
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    • 1993
  • A PWM switching control strategy based on instantaneous integration concept for reducing hamonic components of inverter system with fluctuating input voltage is presented. Applying this strategy to single phase full bridge PWM inverter through bipolor switching method and unipolor switching method, reduction of hamonic components of output voltage and current is demonstrated through simulation. The system operation is examined and confirmed by experiments.

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Development of Analysis Technique for a High Voltage Circuit Breaker Using the CFD-CAD Integration (CFD-CAD 통합해석을 이용한 초고압 가스차단기 설계 기술 개발)

  • Lee, J.C.;Oh, I.S.;Min, K.S.;Kim, Y.J.
    • Proceedings of the KSME Conference
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    • 2001.11b
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    • pp.523-528
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    • 2001
  • There are many difficult problems in analyzing the flow characteristics in a high voltage circuit breaker such as shock wave and complex geometries, which may be either static or in relative motion. Although a variety of mesh generation techniques are now available, the generation of meshes around complicated, multicomponent geometries like a gas circuit breaker is still a tedious and difficult task for the computational fluid dynamics. This paper presents the computational method for analyzing the compressible flow fields in a high voltage gas circuit breaker using the Cartesian cut-cell method based on the CFD-CAD integration, which can achieve the accurate representation of the geometry designed by a CAD tools. The technique is frequently satisfied, and it will be almost universally so in the future, as the CFD-CAD traffic increases.

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Frequency Stabilization Method for Grid Integration of Large-scale Centralized Wind Farms via VSC-HVDC Technology

  • Peng, Yanjian;Li, Yong;Liu, Fang;Xu, Zhiwei;Cao, Yijia
    • Journal of Power Electronics
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    • v.18 no.2
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    • pp.547-557
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    • 2018
  • This work proposes a control method of frequency stabilization for grid integration of large-scale wind farms via the voltage source converter-based high-voltage direct current (VSC-HVDC) technology. First, the topology of grid integration of a large-scale wind farm via the VSC-HVDC link is provided, and simple control strategies for wind turbines, wind farm side VSC (WFVSC), and grid side VSC are presented. Second, a mathematical model between the phase angle of WFVSC and the frequency of the wind farm is established. The control principle of the large-scale wind power integrated system is analyzed in theory in accordance with the mathematical model. Third, frequency and AC voltage controllers of WFVSC are designed based on the mathematical model of the relationships between the phase angle of WFVSC and the frequency of the wind farm, and between the modulation index of WFVSC and the voltage of the wind farm. Corresponding controller structures are established by deriving a transfer function, and an optimization method for selecting the parameters of the frequency controller is presented. Finally, a case study is performed under different operating conditions by using the DIgSILENT/PowerFactory software. Results show that the proposed control method has good performance in the frequency stabilization of the large-scale wind power integrated system via the VSC-HVDC technology.

Hybrid Secondary Voltage Control combined with Large-Scale Wind Farms and Synchronous Generators

  • Kim, Jihun;Lee, Hwanik;Lee, Byongjun;Kang, Yong Cheol
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.399-405
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    • 2014
  • For stable integration of large-scale wind farms, integration standards (Grid codes) have been proposed by the system operator. In particular, voltage control of large-scale wind farms is gradually becoming important because of the increasing size of individual wind farms. Among the various voltage control methods, Secondary Voltage Control (SVC) is a method that can control the reactive power reserve of a control area uniformly. This paper proposes hybrid SVC when a large-scale wind farm is integrated into the power grid. Using SVC, the burden of a wind turbine converter for generating reactive power can be reduced. To prove the effectiveness of the proposed strategy, a simulation study is carried out for the Jeju system. The proposed strategy can improve the voltage conditions and reactive power reserve with this hybrid SVC.

Integration of 5-V CMOS and High-Voltage Devices for Display Driver Applications

  • Kim, Jung-Dae;Park, Mun-Yang;Kang, Jin-Yeong;Lee, Sang-Yong;Koo, Jin-Gun;Nam, Kee-Soo
    • ETRI Journal
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    • v.20 no.1
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    • pp.37-45
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    • 1998
  • Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

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The Calculation Method of the Breakdown Voltage for the Drain Region with the Spherical Structure in High Voltage Analog CMOS (Spherical 구조를 갖는 고전압용 Analog CMOS의 Drain 역방향 항복전압의 계산 방법)

  • Lee, Un Gu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.9
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    • pp.1255-1259
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    • 2013
  • A calculation method of the breakdown voltage for the Drain region with the spherical structure in high voltage analog CMOS is proposed. The Drain depletion region is divided into many sub-regions and the doping concentration of each sub-region is assumed to be constant. The field in each sub-region is calculated by the integration of the net charge and the breakdown voltage is calculated using the ionization integral method. The breakdown voltage calculated using the proposed method shows the maximum relative error of 3.3% compared with the result of the 2-dimensional device simulation using BANDIS.

Study of Selection Plan of Circuit breakers, Cables and Modeling of Korean Low Voltage Electrical Installation integration Test Site based on IEC 60364 (IEC 60364 기반의 한국형 저압전기설비 통합 실증단지 모델링 및 차단기와 케이블의 선정 방안 고찰)

  • Kim, Doo-Ung;Ryu, Kyu-Sang;Kim, Han-Soo;Shin, Dae-Sung;Ryu, Ki-Hwan;Kim, Chul-Hwan
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.29 no.9
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    • pp.59-64
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    • 2015
  • IEC is an international standards which are used in many countries with Europe as the center. IEC standard is introduced in Korea according to WTO/TBT agreements, however until now there are no buildings in Korea which are designed applying IEC standard. Therefore, KEA(Korea Electric Association) is scheduled to construct Korean low voltage electrical installation integration test site which is designed applying IEC standard. In this paper, before being under construction of Korean low voltage electrical installation integration test site, power substation is modeled based on real design parameters and method to select circuit breakers and cables is presented applying IEC standard in the modeled power substation. EMTP(ElctroMagnetic Transient Program) is used for simulation program. EMTP which is power system analysis program is easy to model power system and power substation.

Dual Sensing with Voltage Shifting Scheme for High Sensitivity Touch Screen Detection (고감도 터치스크린 감지를 위한 양방향 센싱과 전압쉬프팅을 이용한 센싱 기법)

  • Seo, Incheol;Kim, HyungWon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.4
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    • pp.71-79
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    • 2015
  • This paper proposes a new touch screen sensing method that improves the drawback of conventional single-line sensing methods for mutual capacitance touch screen panels (TSPs). It introduces a dual sensing and voltage shifting method, which reduces the ambient noise effectively and enhances the touch signal strength. The dual sensing scheme reduces the detection time by doubling the integration speed using both edges of excitation pulse signals. The voltage shifting method enhances the signal-to-noise ratio (SNR) by increasing the voltage range of integrations, and maximizing the ADC's input dynamic range. Simulation and experimental results using a commercial 23" large touch screen show an SNR performance of 43dB and a scan rate 2 times faster than conventional schemes - key properties suited for a large touch screen panels. We implemented the proposed method into a TSP controller chip using Magnachip's CMOS 0.18um process.

The Calculation Method of the Breakdown Voltage for the Drain Region with the Cylindrical Structure in LDMOS (Cylindrical 구조를 갖는 LDMOS의 Drain 역방향 항복전압의 계산 방법)

  • Lee, Un Gu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.12
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    • pp.1872-1876
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    • 2012
  • A calculation method of the breakdown voltage for the drain region with the cylindrical structure in LDMOS is proposed. The depletion region of the drain is divided into many smaller regions and the doping concentration of each split region is assumed to be uniformly distributed. The field and potential in each split region is calculated by the integration of the Poisson equation and the ionization integral method is used to compute the breakdown voltage. The breakdown voltage resulted from the proposed method shows the maximum relative error of 2.2% compared with the result of the 2-dimensional device simulation using BANDIS.