• 한국표면공학회지
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• 제57권2호
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• pp.57-70
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• 2024

Nickel-cobalt-manganese (NCM) lithium-ion batteries(LIBs) are increasingly prominent in the energy storage system due to their high energy density and cost-effectiveness. However, they face significant challenges, such as rapid capacity fading and structural instability during high-voltage operation cycles. Addressing these issues, numerous researchers have studied the enhancement of electrochemical performance through the coating of NCM cathode materials with substances like metal oxides, lithium composites, and polymers. Coating these cathode materials serves several critical functions: it acts as a protection barrier against electrolyte decomposition, mitigates the dissolution of transition metals, enhances the structural integrity of the electrode, and can even improve the ionic conductivity of the cathode. Ultimately, these improvements lead to better cycle stability, increased efficiency, and enhanced overall battery life, which are crucial for the advancement of NCM-based lithium-ion batteries in high-demand applications. So, this paper will review various cathode coating materials and examine the roles each plays in improving battery performance.

• ETRI Journal
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• 제46권3호
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• pp.550-563
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• 2024

A novel inductance simulation circuit employing only two dual-output voltage-differencing buffered amplifiers (DO-VDBAs) and a single capacitance (grounded) is proposed in this paper. The reported configuration is a purely resistor-less realization that provides electronically controllable realized inductance through biasing quantities of DO-VDBAs and does not rely on any constraints related to matched values of parameters. This structure exhibits excellent behavior under the influence of tracking errors in DO-VDBAs and does not exhibit instability at high frequencies. The simple and compact metal-oxide semiconductor (MOS) implementation of the DO-VDBAs (eight MOS per DO-VDBA) and adoption of grounded capacitance make the proposed circuit suitable for on-chip realization from the perspective of chip area consumption. The function of the pure grounded inductance is validated through high pass/bandpass filtering applications. To test the proposed design, simulations were performed in the PSPICE environment. Experimental validation was also conducted using the integrated circuit CA3080 and operational amplifier LF-356.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.211.1-211.1
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• 2015

최근 용액 공정을 이용한 산화물 반도체에 대한 연구가 활발히 진행되고 있다. 넓은 밴드갭을 가지고 있는 산화물 반도체는 높은 투과율을 가지고 있어 투명 디스플레이에 적용이 가능하다. 기존의 박막 진공증착 방법은 진공상태를 유지하기 위한 장비의 가격이 비싸며, 대면적의 어려움, 높은 생산단가 등으로 생산율이 높지 않다. 하지만 용액 공정을 이용하면 대기압에서 증착이 가능하고 대면적화가 가능하다. 그리고 각각의 조성비를 조절하는 것이 가능하다. 이러한 장점에도 불구하고, 소자의 신뢰성이나 저온공정은 중요한 이슈이다. Instability는 threshold voltage (Vth)의 shift 및 on/off switching의 신뢰성과 관련된 parameter이다. 용액은 소자의 전기적 특성을 열화 시키는 수분 과 탄소계열의 불순물을 다량 포함 하고 있어 고품질의 박막을 형성하기 위해서는 고온의 열처리가 필요하다. 기존의 열처리는 고온에서 장시간 이루어지기 때문에 유리나 플라스틱, 종이 기판의 소자에서는 불가능하지만 $100^{\circ}C$ 이하의 저온 공정인 microwave를 이용하면 유리, 플라스틱, 종이 기판에서도 적용이 가능하다. 본 연구에서는 산화물 반도체 중에서 InGaZnO (IGZO)를 용액 공정으로 제작한 juctionless thin-film transistor를 제작하여 기존의 열처리를 이용하여 처리한 소자와 microwave를 이용해서 열처리한 소자의 전기적 특성을 한 달 동안 관찰 하였다. 또한 In:Zn의 비율을 고정한 후 Ga의 비율을 달리하여 특성을 비교하였다. 먼저 p-type bulk silicon 위에 SiO2 산화막이 100 nm 증착된 기판에 RCA 클리닝을 진행 하였고, solution InGaZnO 용액을 spin coating 방식으로 증착하였다. Coating 후에, solvent와 수분을 제거하기 위해서 $180^{\circ}C$에서 10분 동안 baking공정을 하였다. 이후 furnace열처리와 microwave열처리를 비교하기 위해 post-deposition-annealing (PDA)으로 furnace N2 분위기에서 $600^{\circ}C$에서 30분, microwave를 1800 W로 2분 동안 각각의 샘플에 진행하였다. 또한, HP 4156B semiconductor parameter analyzer를 이용하여 제작된 TFT의 transfer curve를 측정하였다. 그 결과, microwave 열처리한 소자의 경우 기존의 furnace 열처리 소자와 비교하여 높은 mobility, 낮은 hysteresis 값을 나타내었으며, 1달간 소자의 특성을 관찰하였을 때 microwave 열처리한 소자의 경우 전기적 특성이 거의 변하지 않는 것을 확인하였다. 따라서 향후 용액공정, 저온공정을 요구하는 소자 공정에 있어 열처리방법으로 microwave를 이용한 활용이 기대된다.

• 한국정보통신학회논문지
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• 제13권2호
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• pp.348-354
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• 2009

본 논문은 p-MOS 트랜지스터에서 음 바이어스 온도 불안정(NBTI) 전류 스트레스 인가에 의해서 드레인 전류, 문턱 전압, 문턱 전압아래 기울기, 게이트유기 드레인 누설(GIDL) 전류가 변화하는 열화특성을 측정하고 분석하였다. 스트레스 시간, 온도와 전계 의존에 연관된 열화 크기는 실리콘/산화막 계면에서 계면 트랩 생성에 좌우된다는 것으로 나타났다. 문턱 전압의 변화와 문턱 전압아래 기울기 사이에 상관관계로부터, 소자 열화에 대한 중요한 메카니즘이 계면 상태의 생성과 관련이 있다는 것을 분석하였다. GIDL 측정 결과로부터, NBTI 스트레스에 기인한 계면상태에서 전자 정공쌍의 생성이 GIDL 전류의 증가를 가져온다. 그러므로 초박막 게이트 산화막 소자에서 NBTI 스트레스 후에 GIDL 전류 증가를 고려하여 야만 한다. 또한, 신뢰성 특성과 dc 소자 성능을 동시에 고려함이 초고집적 CMOSFET의 스트레스 공학기술에서 상당히 필수불가결하다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.362-369
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• 2001

The electrical properties of varistors consisting of Zn-Pr-Co-Cr-Er oxides were investigated in the Er$_2$O$_3$content range of 0.0 to 2.0 mol%. the varistors without Er$_2$O$_3$ exhibited a relatively low nonlinearity, which was 14.24 in the nonlinear exponent and 21.47 $\mu$A in the leakage current. However, the varistors with Er$_2$O$_3$ sintered at 1335$^{\circ}C$ for 1h exhibited very high nonlinear exponent of 70, in particular, reaching a maximum value of 78.05 in 2.0 mol% Er$_2$O$_3$, and those sintered at 1335$^{\circ}C$ for 2h exhibited the nonlinear exponent close to 50, in particular, reaching a maximum value of52.76 in 0.5 mol% Er$_2$O$_3$. The others except for 0.5 mol% Er$_2$O$_3$-added varistors exhibited very high instability resulting in a thermal runaway within a short time, even a weak DC stress. Increasing soaking time decreased the nonlinearity, but increased the stability. The varistors containing 0.5mol% Er$_2$O$_3$ sintered for 2h exhibited excellent stability, in which the variation rate of the varistor voltage and nonlinear exponent was -1.70% and -7.15%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/12h).TEX>/12h).

• 한국초전도ㆍ저온공학회논문지
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• 제17권1호
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• pp.10-13
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• 2015

High-temperature superconducting coated conductors (HTS-CCs) are good candidates for resistive superconducting fault current limiter (RSFCL) applications. However, the high current density they can carry and their low thermal diffusivity expose them to the risk of thermal instability. In order to find the best compromise between stability and cost, it is important to study the heat transfer between HTS-CCs and the liquid nitrogen ($LN_2$) bath. This paper presents an experimental method to monitor in real-time the temperature of a quenched HTS-CC during a current pulse. The current and the associated voltage are measured, giving a precise knowledge of the amount of energy dissipated in the tape. These values are compared with an adiabatic numerical thermal model which takes into account heat capacity temperature dependence of the stabilizer and substrate. The result is a precise estimation of the heat transfer to the liquid nitrogen bath at each time step. Measurements were taken on a bare tape and have been repeated using increasing $Kapton^{(R)}$ insulation layers. The different heat exchange regimes can be clearly identified. This experimental method enables us to characterize the recooling process after a quench. Finally, suggestions are done to reduce the temperature increase of the tape, at a rated current and given limitation time, using different thermal insulation thicknesses.

• 한국세라믹학회지
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• 제43권5호
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• pp.270-276
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• 2006

LSGM(($La_xSr_{1-x})(Ga_yMg_{1-y})O_3$) electrolyte is known to show very serious interfacial reaction with other unit cell components, especially with an anode. Such an interfacial reaction induced the phase instability of constituent component and deterioration of the unit cell performance, which become the most challenging issues in LSGM-based SOFCs. In this study, we fabricated LSGM($La_{0.8}Sr_{0.2}Ga_{0.83}Mg_{0.17}O_x$) electrolyte supported-type cell in order to avoid such interfacial problem by lowering the heat-treatment temperature of the electrode fabrication. According to the microstructural and phase analysis, there was no serious interfacial reaction at both electrolyte/anode and electrolyte/cathode interfaces. Moreover, from the electrochemical characterization of the unit cell performance, there was no distinct deterioration of the open cell voltage as well as an internal cell resistance. These results demonstrate the most critical point to be concerned in LSGM-based SOFC is either to find a proper electrode material which will not give any interfacial reaction with LSGM electrolyte or to properly adjust the processing variables for unit cell fabrication, to reduce the interfacial reaction.

• 수면정신생리
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• 제17권2호
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• pp.75-84
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• 2010

The cyclic alternating pattern (CAP) is a periodic EEG activity in NREM sleep, characterized by sequences of transient electrocortical events that are distinct from background EEG activities. A CAP cycle consists of two periodic EEG features, phase A and subsequent phase B whose durations are 2-60 s. At least two consecutive CAP cycles are required to define a CAP sequence. The CAP phase A is a phasic EEG event, such as delta bursts, vertex sharp transients, K-complex sequences, polyphasic bursts, K-alpha, intermittent alpha, and arousals. Phase B is repetitive periods of background EEG activity. The absence of CAP more than 60 seconds or an isolated phase A is classified as non-CAP. Phase A activities can be classified into three subtypes (A1, A2, and A3), based on the amounts of high-voltage slow waves (EEG synchrony) and low-amplitude fast rhythms (EEG desynchrony). CAP rate, the percentage of CAP durations in NREM sleep is considered to be a physiologic marker of the NREM sleep instability. In insomnia, the frequent discrepancy between self-reports and polysomnographic findings could be attributed to subtle abnormalities in the sleep tracing, which are overlooked by the conventional scoring methods. The conventional scoring scheme has superiority in analysis of macrostructure of sleep but shows limited power in finding arousals and transient EEG events that are major component of microstructure of sleep. But, it has recently been found that a significant correlation exists between CAP rate and the subjective estimates of the sleep quality in insomniacs and sleep-improving treatments often reduce the amount of CAP. Thus, the extension of conventional sleep measures with the new CAP variables, which appear to be the more sensitive to sleep disturbance, may improve our knowledge on the diagnosis and management of insomnia.