• 제목/요약/키워드: Voltage Instability

검색결과 200건 처리시간 0.029초

DC 배전시스템의 품질향상을 위한 VBC 적응제어 (The design of adaptive Controller for the Voltage Bus Conditioner for the improvement of the Power Quality in the DC Power Distribution System)

  • 우현민;이병헌;장한솔;나재두;김영석
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2011년도 정기총회 및 추계학술대회 논문집
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    • pp.2348-2356
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    • 2011
  • In recent years, many researches for DC power distributed system (PDS) are being preformed and the importance of the DC PDS is more and more emphasized. Furthermore, in the railway system, the DC PDS is used in subway station lighting, facilities, etc. In the DC PDS, DC bus voltage instability may be occurred by the operation of multiple parallel loads such as pulsed power load, motor drive system, and constant power loads. Thus, good quality and high reliability for electric power are required and voltage bus conditioner (VBC) may be used the DC PDS. The VBC is a DC/DC converter for mitigation of the bus transients. In this paper, adaptive controller is designed. The simulation results by PSIM are presented for validating the proposed control algorithm.

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$Al-Al_2O_3-Si$(N형)의 MAS 구조에 있어서 고전계에 의한 Carrier 주인과 트?에 관한 연구 (A Study on Carrier Injection and Trapping by the High Field for MAS (Al-Al2O3-Si(n)) Structure)

  • 이영희;박성희
    • 대한전기학회논문지
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    • 제35권10호
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    • pp.465-472
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    • 1986
  • The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.

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다기의 FACTS 기기 협조제어 시스템 개발 (Development of Cooperated Control System for Multiple FACTS in KEPCO Power Systems)

  • 장병훈
    • 전기학회논문지
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    • 제57권10호
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    • pp.1726-1730
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    • 2008
  • In this paper, the application schemes for coordinated control system of multiple FACTS were presented to enhance the voltage stability around the metropolitan areas. In order to coordinated control of FACTS devices, f-V analysis method which is one of the indices for voltage stability was performed with real time network data which is transferred from SCADA/EMS system. If the system is unstable after contingencies, the new operation set-point of FACTS would be determined using bus sensitivity from tangent vector at voltage instability point. Otherwise, we would determine the new operation set-point of FACTS for considering economical operation, like as active power loss minimization using Optimal Power Flow algorithm. In simulation, the SCADA/EMS 2007's data are used for studying the coordinated control algorithm of multiple FACTS devices that is installed or will be installed in KOREA power system

전압붕괴 측면에서의 Zone3 보호동작 억제를 위한 제어방안 (Control strategy against undesirable zone 3 protection with respect to voltage collapse)

  • 송화창;이병준
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
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    • pp.24-26
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    • 2005
  • This paper presents a framework for determining control strategies against unwanted tripping actions of relay operation that plays a very important role in cascading events leading to voltage collapse. The framework includes an algorithm for quick identification of possible zone 3 relay operation during voltage instability. The proposed approach comes up with control strategy of load shedding at the selected location with active power and relay margin criteria. In addition, Quasi Steady-State (QSS) simulation is employed to obtain time-related information which is valuable for both the timing and amount of control. The methodology is demonstrated through the modified New England 39-bus system.

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RC tree의 지연시간 예측 (RC Tree Delay Estimation)

  • 유승주;최기영
    • 전자공학회논문지A
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    • 제32A권12호
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    • pp.209-219
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    • 1995
  • As a new algorithm for RC tree delay estimation, we propose a $\tau$-model of the driver and a moment propagation method. The $\tau$-model represents the driver as a Thevenin equivalent circuit which has a one-time-constant voltage source and a linear resistor. The new driver model estimates the input voltage waveform applied to the RC more accurately than the k-factor model or the 2-piece waveform model. Compared with Elmore method, which is a lst-order approximation, the moment propagation method, which uses $\pi$-model loads to calculate the moments of the voltage waveform on each node of RC trees, gives more accurate results by performing higher-order approximations with the same simple tree walking algorithm. In addition, for the instability problem which is common to all the approximation methods using the moment matching technique, we propose a heuristic method which guarantees a stable and accureate 2nd order approximation. The proposed driver model and the moment propagation method give an accureacy close to SPICE results and more than 1000 times speedup over circuit level simulations for RC trees and FPGA interconnects in which the interconnect delay is dominant.

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특수수용가의 고조파전압 왜형현황과 고조파 관리 방안 (Harmonic Distortion Level of Special loads and Method of Harmonic Distortion Management)

  • 황치우;성기철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 D
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    • pp.875-877
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    • 1997
  • Due to the development of electric energy conversion technology and need for energy saving most of the electric machinery and equipments are using power semiconductor switching elements, On the contrary semiconductor switching device is more sensitive to the voltage instability and voltage distortion. In order to manage the voltage distortion following foundation should be settled down in advance. First, reasonable and objective technical guidelines should be established. Second, monitoring network for power quality should be operated. In this paper measurement results of the harmonic distortion of the special loads are given and method for harmonic pollution management is discussed.

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An Interior Point Method based Reactive Optimal Power Flow Incorporating Margin Enhancement Constraints

  • Song Hwa-Chang;Lee Byong-Jun;Moon Young-Hwan
    • KIEE International Transactions on Power Engineering
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    • 제5A권2호
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    • pp.152-158
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    • 2005
  • This paper describes a reactive optimal power flow incorporating margin enhancement constraints. Margin sensitivity at a steady-state voltage instability point is calculated using invariant space parametric sensitivity, and it can provide valuable information for selection of effective control parameters. However, the weakest buses in neighboring regions have high margin sensitivities within a certain range. Hence, the control determination using only the sensitivity information might cause violation of operational limits of the base operating point, at which the control is applied to enhance voltage stability margin in the direction of parameter increase. This paper applies an interior point method (IPM) to solve the optimal power flow formulation with the margin enhancement constraints, and shunt capacitances are mainly considered as control variables. In addition, nonlinearity of margin enhancement with respect to control of shunt capacitance is considered for speed-up control determination in the numerical example using the IEEE 118-bus test system.

The Effect of Light on Amorphous Silicon Thin Film Transistors based on Photo-Sensor Applications

  • Ha, Tae-Jun;Park, Hyun-Sang;Kim, Sun-Jae;Lee, Soo-Yeon;Han, Min-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.953-956
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    • 2009
  • We have investigated the effect of light on amorphous silicon thin film transistors based photo-sensor applications. We have analyzed the instability caused by electrical gate bias stresses under the light illumination and the effect of photo-induced quasi-annealing on the instability. Threshold voltage ($V_{TH}$) under the negative gate bias stress with light illumination was more decreased than that under the negative gate bias stress without light illumination even though $V_{TH}$ caused by the light-induced stress without negative gate bias was shifted positively. These results are because the increase of carrier density in a channel region caused by the light illumination has the enhanced effect on the instability caused by negative gate bias stress. The prolonged light illumination led to the recovery of shifted VTH caused by negative gate bias stress under the light illumination due to the recombination of trapped hole charges.

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Pulsating fluid induced dynamic stability of embedded viscoelastic piezoelectric separators using different cylindrical shell theories

  • Pour, H. Rahimi;Arani, A. Ghorbanpour;Sheikhzadeh, Gh.
    • Steel and Composite Structures
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    • 제24권4호
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    • pp.499-512
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    • 2017
  • This paper deals with nonlinear dynamic stability of embedded piezoelectric nano-composite separators conveying pulsating fluid. For presenting a realistic model, the material properties of structure are assumed viscoelastic based on Kelvin-Voigt model. The separator is reinforced with single-walled carbon nanotubes (SWCNTs) which the equivalent material properties are obtained by mixture rule. The separator is surrounded by elastic medium modeled by nonlinear orthotropic visco Pasternak foundation. The separator is subjected to 3D electric and 2D magnetic fields. For mathematical modeling of structure, three theories of classical shell theory (CST), first order shear deformation theory (FSDT) and sinusoidal shear deformation theory (SSDT) are applied. The differential quadrature method (DQM) in conjunction with Bolotin method is employed for calculating the dynamic instability region (DIR). The detailed parametric study is conducted, focusing on the combined effects of the external voltage, magnetic field, visco-Pasternak foundation, structural damping and volume percent of SWCNTs on the dynamic instability of structure. The numerical results are validated with other published works as well as comparing results obtained by three theories. Numerical results indicate that the magnetic and electric fields as well as SWCNTs as reinforcer are very important in dynamic instability analysis of structure.

Electrically Stable Transparent Complementary Inverter with Organic-inorganic Nano-hybrid Dielectrics

  • Oh, Min-Suk;Lee, Ki-Moon;Lee, Kwang-H.;Cha, Sung-Hoon;Lee, Byoung-H.;Sung, Myung-M.;Im, Seong-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.620-621
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    • 2008
  • Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

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