• Title/Summary/Keyword: Voltage Gain

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A High-Gain Boost Converter using Voltage-Stacking Cell (Voltage-Stacking Cell을 이용한 고이득 부스트 컨버터)

  • Lee, Jun-Young;Hwang, Sun-Nam
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.6
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    • pp.982-984
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    • 2008
  • This paper suggests anon-isolated high-gain boost converter using voltage-stacking cell. The voltage gain can be increased by adjusting number of voltage-stacking cells and transformer turns-ratio. Test results with 1kW prototype converter show that the voltage gain is three or four times higher than conventional boost converter at unity transformer turns-ratio and about 90% of efficiency is recorded under full load condition.

Novel Non-Isolated DC-DC Converter Topology with High Step-Up Voltage Gain and Low Voltage Stress Characteristics Using Single Switch and Voltage Multipliers (단일 스위치와 전압 체배 회로를 이용하는 고변압비와 낮은 전압 스트레스를 가진 새로운 비절연형 DC-DC 컨버터 토폴로지)

  • Tran, Manh Tuan;Amin, Saghir;Choi, Woojin
    • Proceedings of the KIPE Conference
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    • 2019.07a
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    • pp.83-85
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    • 2019
  • The use of high voltage gain converters is essential for the distributed power generation systems with renewable energy sources such as the fuel cells and solar cells due to their low voltage characteristics. In this paper, a high voltage gain topology combining cascode Inverting Buck-Boost converter and voltage multiplier structure is introduced. In proposed converter, the input voltage is connected in series at the output, the portion of input power is directly delivered to the load which results in continuous input current. In addition, the voltage multiplier stage stacked in proper manner is not only enhance high step-up voltage gain ratio but also significantly reduce the voltage stress across all semiconductor devices and capacitors. As a result, the high current-low voltage switches can be employed for higher efficiency and lower cost. In order to show the feasibility of the proposed topology, the operation principle is presented and the steady-state characteristic is analyzed in detail. A 380W-40/380V prototype converter was built to validate the effectiveness of proposed converter.

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Analysis and Design of Function Decoupling High Voltage Gain DC/DC Converter

  • Wei, Yuqi;Luo, Quanming;Lv, Xingyu;Sun, Pengju;Du, Xiong
    • Journal of Power Electronics
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    • v.19 no.2
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    • pp.380-393
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    • 2019
  • Traditional boost converters have difficulty realizing high efficiency and high voltage gain conversion due to 1) extremely large duty cycles, 2) high voltage and current stresses on devices, and 3) low conversion efficiency. Therefore, a function decoupling high voltage gain DC/DC converter composed of a DC transformer (DCX) and an auxiliary converter is proposed. The role of DCX is to realize fixed gain conversion with high efficiency, whereas the role of the auxiliary converter is to regulate the output voltage. In this study, different forms of combined high voltage gain converters are compared and analyzed, and a structure is selected for the function decoupling high voltage gain converter. Then, topologies and control strategies for the DCX and auxiliary converter are discussed. On the basis of the discussion, an optimal design method for circuit parameters is proposed, and design procedures for the DCX are described in detail. Finally, a 400 W experimental prototype based on the proposed optimal design method is built to verify the accuracy of the theoretical analysis. The measured maximum conversion efficiency at rated power is 95.56%.

A SiGe HBT Variable Gain Driver Amplifier for 5-GHz Applications

  • Chae Kyu-Sung;Kim Chang-Woo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.3A
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    • pp.356-359
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    • 2006
  • A monolithic SiGe HBT variable gain driver amplifier(VGDA) with high dB-linear gain control and high linearity has been developed as a driver amplifier with ground-shielded microstrip lines for 5-GHz transmitters. The VGDA consists of three blocks such as the cascode gain-control stage, fixed-gain output stage, and voltage control block. The circuit elements were optimized by using the Agilent Technologies' ADSs. The VGDA was implemented in STMicroelectronics' 0.35${\mu}m$ Si-BiCMOS process. The VGDA exhibits a dynamic gain control range of 34 dB with the control voltage range from 0 to 2.3 V in 5.15-5.35 GHz band. At 5.15 GHz, maximum gain and attenuation are 10.5 dB and -23.6 dB, respectively. The amplifier also produces a 1-dB gain-compression output power of -3 dBm and output third-order intercept point of 7.5 dBm. Input/output voltage standing wave ratios of the VGDA keep low and constant despite change in the gain-control voltage.

A Novel Non-Isolated Buck Boost Converter with High Voltage Gain and High Efficiency Characteristics (고변압비와 고효율 특성을 가진 새로운 비절연형 벅부스트 컨버터)

  • Tran, Manh Tuan;Amin, Saghir;Choi, Woojin
    • The Transactions of the Korean Institute of Power Electronics
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    • v.24 no.5
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    • pp.319-326
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    • 2019
  • The use of high-voltage gain converters is essential for distributed power generation systems with renewable energy sources, such as fuel and solar cells, due to their low-voltage characteristics. In this study, a novel high-voltage gain non-isolated buck boost converter topology is proposed to cope with the need of a high-voltage conversion ratio without the transformer for the renewable energy sources. Given that the proposed topology utilizes the cascode structure, the voltage gain and the efficiency are higher than those of other conventional non-isolated converters. To demonstrate the feasibility of the proposed topology, the operation principle is presented, and the steady-state characteristics are analyzed in detail. The validity of the proposed converter is verified by experiments with a 400 W prototype converter.

Switched Capacitor Based High Gain DC-DC Converter Topology for Multiple Voltage Conversion Ratios with Reduced Output Impedance

  • Priyadarshi, Anurag;Kar, Pratik Kumar;Karanki, Srinivas Bhaskar
    • Journal of Power Electronics
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    • v.19 no.3
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    • pp.676-690
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    • 2019
  • This paper presents a switched capacitor (SC) based bidirectional dc-dc converter topology for high voltage gain applications. The proposed converter is able to operate with multiple integral voltage conversion ratios based on user input. The architecture of a user-friendly, inductor-less multi-voltage-gain bidirectional dc-dc converter is proposed in this study. The inductor-less or magnetic-less design of the proposed converter makes it effective in higher temperature applications. Furthermore, the proposed converter has a reduced component count and lower voltage stress across its switches and capacitors when compared to existing SC converters. An output impedance analysis of the proposed converter is presented and compared with popular existing SC converters. The proposed converter is simulated in the OrCAD PSpice environment and the obtained results are presented. A 200 W hardware prototype of the proposed SC converter has been developed. Experimental results are presented to validate the efficacy of the proposed converter.

H-type Structural Boost Three-Level DC-DC Converter with Wide Voltage-Gain Range for Fuel Cell Applications

  • Bi, Huakun;Wang, Ping;Che, Yanbo
    • Journal of Power Electronics
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    • v.18 no.5
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    • pp.1303-1314
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    • 2018
  • To match the dynamic lower voltage of a fuel cell stack and the required constant higher voltage (400V) of a DC bus, an H-type structural Boost three-level DC-DC converter with a wide voltage-gain range (HS-BTL) is presented in this paper. When compared with the traditional flying-capacitor Boost three-level DC-DC converter, the proposed converter can obtain a higher voltage-gain and does not require a complicate control for the flying-capacitor voltage balance. Moreover, the proposed converter, which can draw a continuous and low-rippled current from an input source, has the advantages of a wide voltage-gain range and low voltage stress for power semiconductors. The operating principle, parameters design and a comparison with other converters are presented and analyzed. Experimental results are also given to verify the aforementioned characteristics and theoretical analysis. The proposed converter is suitable for application of fuel cell systems.

Voltage Gain and Efficiency Analysis of Piezoelectric Transformer using Lumped constant Equivalent Circuit (집중 등가회로를 사용한 압전 변압기의 승합비 및 효율 해석)

  • 류주현;이용우;윤광희;정희승;정영호;박창엽
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.849-854
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    • 1998
  • The load characteristics on the voltage gain and efficiency were analyzed using a lumped constant equivalent circuit of the piezoelectric transformer. These analytical results were confirmed by experiments. Theoretical values of voltage gain were nearly constant with experimental ones. However, It was shown that theoretical values of efficiency is higher than experimental ones.

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Voltage Gain and Efficiency Ana1ysis of Piezoelectric Transformer using Lumped Constant Equivalent Circuit (Rosen형 압전 트랜스포머의 집중등가회로를 사용한 승압비 및 효율 해석)

  • 김만성;류주현;정회승;박창엽;정영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.183-189
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    • 1998
  • In this paper, The load characteristics on the voltage gain and efficiency were analyzed sing an lumped constant equivalent circuit of the piezoelectric transformer. These analytical results are confirmed by experiments. Theoretical values of voltage gain were nearly constant with experimental ones. However, It was shown that theoretical values of efficiency had higher values than experimental ones.

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The Novel Low-Voltage High-Gain Transresistance Amplifier Design (새로운 구조의 저전압 고이득 트랜스레지스턴스 증폭기 설계)

  • Kim, Byoung-Wook;Bang, Jun-Ho;Cho, Seong-Ik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2257-2261
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    • 2007
  • A new CMOS transresistance amplifier for low-voltage analog integrated circuit design applications is presented. The proposed transresistance amplifier circuit based on common-source and negative feedback topology is compared with other recent reported transresistance amplifier. The proposed transresistance amplifier achieves high transresistance gain, gain-bandwidth with the same input/output impedance and the minimum supply voltage $2V_{DSAT}+V_T$. Hspice simulation using 1.8V TSMC $0.18{\mu}m$ CMOS technology was performed and achieved $59dB{\Omega}$ transresistance gain which is above the maximum about $18dB{\Omega}$ compared to transresistance gain of the reported circuit.