• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.25-26
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• 2008

In this paper, the white organic light-emitting diode(OLED)was fabricated using the DPVBi of blue emitting material and a rubrene of orange color of fluorescent dye by vacuum evaporation processes. The device structure of OLED was Glass/ITO/2T-NATA(15nm)/NPB(3nm)/DPVBi(3nm)/DPVBi rubrene[2%](10nm)/DPVBi(25nm)/$Alq_3$ or New-ETL(60nm) /LiF(0.5nm)/ Al(100nm). The device with the $Alq_3$, layer shows orange color, and the luminance of 1000cd/$m^2$ at an applied voltage of 10.4V. On the other hand, the New-En layer results in white color, CIE coordinates of (0.327, 0.323), and the lowered driving voltage of 5V for achieving the same luminance value.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.189-192
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• 2008

A 5.8-inch wide-QQVGA flexible full-color active-matrix OLED display was fabricated on a plastic substrate. Low-voltage-operation organic TFTs and high-efficiency phosphorescent OLEDs were used as the backplane and emissive pixels, respectively. The fabricated display clearly showed color moving images when the driving voltage was below 15 V.

• Journal of IKEEE
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• v.13 no.2
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• pp.248-252
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• 2009

In this paper, analysis of a noise factor and an effective power strategy for the OLED dc-dc converter are described. One of the main reasons that one may not design the OLED power for dc-dc converter is that OLED's panel noise is composed of FFN(Frame Frequency Noise) and LFN(Line Frequency Noise). Into the bargain, FFN is caused by both the dc-dc (circuit) and driving circuit. It is hard to get rid of FFN, baeause FFN has very little results value for our ears. LFN is adjusted by analog compensation value. Actually, that is more important problem than FFN. It is known that voltage divider for OLED's mode variation is not good for compact power design. In the end, a circuit design for understanding OLED's noise and a novel muti-channel dc-dc converter were presented.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.18-23
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• 2018

To study the impedance characteristics of a fluorescent OLED according to the device structure, we fabricated Device 1 using ITO / NPB / $Alq_3$ / Liq / Al, Device 2 using ITO / 2-TNATA / NPB / $Alq_3$ / Liq / Al, and Device 3 using ITO / 2-TNATA / NPB / SH-1:BD / $Alq_3$ / Liq / Al. The current density and luminance decreased with an increasing number of layers of the organic thin films in the order of Device 1, 2, 3, whereas the current efficiency increased. From the Cole-Cole plot at a driving voltage of 6 V, the maximum impedance values of Devices 1, 2, and 3 were respectively 51, 108, and $160{\Omega}$ just after device fabrication. An increase in the impedance maximum value is a phenomenon caused by the charge mobility and the resistance between interfaces. With the elapse of time after the device fabrication, the shape of the Cole-Cole plot changed to a form similar to 0 or a lower voltage due to the degradation of the device. As a result, we were able to see that an impedance change in an OLED reflects the characteristics of the degradation and the layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.17-22
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• 2004

We developed a new ANGLED display driving method which used both amplitude and pulse width modulation. For pulse width modulation, we divided a picture frame time into S sub-frames. For amplitude modulation, we used three OLED luminance(or current) levels which were controlled by TFT's gate voltages. By combining these two modulation methods, we obtained 35(=243) grey levels. And we designed a new data electrode driving circuit block with two shift registers without using DAC's. To verify the feasibility, we simulated the key circuit components by HSpice with TFT parameters extracted from current-voltage characteristics of 6${\mu}{\textrm}{m}$ channel length polysilicon TFT's. From the simulation results, we found that 320${\times}$240, dual scan, 243 grey level AMOLED display can be designed with this method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.397-402
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• 2023

We have developed inverted green phosphorescent organic light emitting diodes (OLEDs) using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and bis(carbazole-9-yl)biphenyl (CBP) hole transport layers. The driving voltage, current efficiency, power efficiency, and emission characteristics of devices were investigated. While the driving voltage for the same current density was about 1~2 V lower in the devices with the TAPC layer, the maximum luminance was higher in the device with the CBP layer. The maximum current efficiency and power efficiency were 3.2 and 2.7 times higher in the device with the CBP layer, respectively. The higher efficiency in the CBP device resulted from the enhanced hole-electron balance although weak parasitic recombination takes place in the CBP hole transport layer.

• ETRI Journal
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• v.34 no.5
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• pp.727-733
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• 2012

This paper demonstrates a new driving scheme that allows reducing the supply voltage of data drivers for low-power active matrix organic light-emitting diode (AMOLED) displays. The proposed technique drives down the data voltage range by 50%, which subsequently diminishes in the peak power consumption of data drivers at the full white pattern by 75%. Because the gate voltage of a driving thin film transistor covers the same range as a conventional driving scheme by means of a level-shifting scheme, the low-data supply scheme achieves the equivalent dynamic range of OLED currents. The average power consumption of data drivers is reduced by 60% over 24 test images, and power consumption is kept below 25%.

• The Journal of the Korea Contents Association
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• v.7 no.1
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• pp.116-123
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• 2007

This paper proposed a new amplitude width modulation for OLED data driver IC. The data driver controls brightness of OLED by adjusting amplitude and width of the data drive current pulse. There were two conventional methods; pulse amplitude modulation(PAM) and pulse width modulation(PWM). The PWM method suffered from lower light emitting time efficiency at low luminance signal. The PAM method suffered from large chip area using DACs for each column. The proposed method was aiming at accurately controlling of the current level by MSB data and light emitting efficiency by LSB data to improve the inefficiencies of the PAM and a PWM. The proposed AWM driver circuit implemented using $0.35-{\mu}m$ 3-poly 4-metal CMOS high voltage process. The simulation result shows the improvement in the accuracy of the gray level control even though the driver circuit is smaller than the PAM.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.104-108
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• 2014

To improve emission efficiency of organic light emitting devices (OLEDs), we fabricated the tandem OLED of ITO / 2-TNATA / NPB / SH-1: 3 vol.% BD-2 / Bphen / Liq / Al / $MoO_x$ (X nm) / 2-TNATA / NPB / SH-1: 3 vol.% BD-2 / Bphen / Liq / Al structure. And emission properties of single OLED and tandem OLED with $MoO_x$ thickness as charge generation layer (CGL) were measured. The current emission efficiency and quantum efficiency of tandem OLED with $MoO_x$ of 3 nm thickness were improved compare with single OLED from 7.46 cd/A and 5.39% to 22.57 cd/A and 11.76%, respectively. In case of thicker or thinner than $MoO_x$ of 3~5 nm, the current emission efficiency and quantum efficiency were decreased, because balance of electron and hole in emission layer was not matching. The driving voltage was increased from 8 V of single OLED to 15 V of tandem OLED by thickness increase of OLED. As a result, it was possible to improve the emission efficiency of OLEDs by optimized $MoO_x$ thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.381-386
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• 2012

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which $Alq_3$ as organic buffer layer and LiF and Al as inorganic protective layers were deposited to protect the damage of OLED by epoxy. And then the OLEDs were attached to flat glass by printing method using epoxy. The basic structure of OLED doped with rubrene of 1 vol.% as emitting layer is ITO(150 nm) / 2-TNATA(50 nm) / ${\alpha}$-NPD(30 nm) / $Alq_3$:Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). In case of depositing $Alq_3$, LiF and Al and then attaching of flat glass onto OLED, current density, luminance, efficiency and driving voltage were not changed and lifetime was increased according to thickness of Al as inorganic protective layers. The lifetime of OLED/$Alq_3$/LiF/Al_4/glass structure was 139 hours increased by 15.8 times more than bare OLED of 8.8 hours and 1.6 times more than edge sealed OLED of 54.5 hours.