• Journal of the Korean Society of Radiology
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• v.6 no.1
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• pp.73-77
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• 2012

Recently, Interest to the photoconductor, which is used to flat form X-ray detector such as a-Se, $HgI_2$, PbO, CdTe, $PbI_2$ etc. is increasing. In this study, the film layer by using the photoconductive material with particle sedimentation was fabricated and evaluated. The quantization efficiency of the continuous X-ray with the 70 kVp energy bandwidth was analyzed by using the Monte Carlo simulation. With the results, the thickness of film with 64 % quantization efficiency was 180 ${\mu}m$ which is similar to the efficiency of 500 ${\mu}m$ a-Se film. And $HIg_2$ film has the high quantization efficiency of 74 % on 240 ${\mu}m$ thickness. The electrical characteristics of the 239 ${\mu}m$ $Hgl_2$ films produced by particle sedimentation were shown as very low dark current(under 10 $pA/mm^2$), and high sensitivity(19.8 mC/mR-sec) with 1 $V/{\mu}m$ input voltage. The SNR, which is influence to the contrast of X-ray image, was shown highly as 3,125 in low driving voltage on 0.8 $V/{\mu}m$. With the results of this study, the development of the low-cost, high-performance image detector with film could be possible by replacing the film produced by particle sedimentation instead to a-Se detector.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.10
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• pp.1973-1981
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• 1994

A PLDRO(Phase Locked Dielectric Resonator Oscillator) in Ku-band(10.95-11.70GHz) is designed with the concept of the feedback property of PLL(Phase Locked Loop). A series feedback type DRO is developed, and VCDRO(Voltage Controlled Dielectric Resonator Oscillator) using a varactor diode as a voltage-variable capacitor is implemented to tune oscillating frequency electrically. Then, PLDRO is designed by using a SPD(Sampling Phase Detector). This PLDRO is phase-locked voltage controlled DRO to reference source(VHF band) by SPD at 10.00 GHz for European FSS(Fixed Satellite Service). The PLDRO generates output power greater than 10dBm at 10.00 GHz and has phase noise of -80 dBc/Hz at 10 KHz offset from carrier. This PLDRO achieves much better frequency stability than conventional VCDRO.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.717-722
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• 2004

A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

• Fire Science and Engineering
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• v.19 no.2 s.58
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• pp.75-80
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• 2005

This dissertation is about the development of PTC(Positive Temperature Coefficient) thermistor by composition method. A multilayer-type PTC samples were fabricated under optimal conditions after setting the experimental composition equation as $(0.90Ba+0.05Sr+0.05Ca)TiO_3+0.01TiO_3+0.01SiO_2+0.0008MnO_2+0.0018Nb_2O_5$ and their testing results were analyzed. The fabrication method of SMD(Surface Mounted Device) multilayer -type sample based on the composition ratio has the advantages in lowering its resistivity at room temperature, considerably, and increasing maximum current level, as needed. Although there is a disadvantage of peak resistivity drop by the multilayer, causing the increasement of thermal capacity. and thereby, increasing the switching delay time, a high applying voltage can increase the peak resistivity and shorten the switching delay time. The voltage-current characteristic showed that the more multilayers increased the initial maximum current and the transition voltage that increased the resistivity abruptly according to the curie point. The element it could be applied with the sensor for the fire detector.

• Journal of the Korean Society of Radiology
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• v.8 no.2
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• pp.65-74
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• 2014

This study extracts characteristics of signal by wavelet transform to prove that the Compton scattering, occurred by changed the energy, influenced a picture. We also analyzed the extracted data and evaluated how much the picture of scatter-rays was affected by a change of tube voltage. For this study, we wrote a program with MatLap which is engineering tool and evaluated with the program on variation of scattered-rays due to increased tube voltage. The evaluation result shows both CR and DR have frequency changes of high frequency area by tube voltage variations and it proved that Compton scattering influences the picture. In conclusion, according to this study indicates that DR is more sensitive to radiation with high energy than CR. Therefore, the research on DR detector needs to be advanced as actual condition of clinical setting is being changed to DR circumstance gradually. From the result of this study, we expect that assessment method of the image quality using MatLab Tool becomes the official assessment method and very useful method.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1B
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• pp.183-192
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• 2000

In this paper, the dual looped CMOS PLL with 3-250MHz input locking range at a single 13.3V is designed. This paper proposed a new PLL architecture with a current pumping algorithm to improve voltage-to-frequencylinearity of VCO(Voltage Controlled Oscillator). The designed VCO operates at a wide frequency range of75.8MHz-lGHz with a high linearity. Also, PFD(Phase frequency Detector) circuit preventing voltage fluctuation of the charge pump with loop filter circuit under the locked condition is designed. The simulation results of the PLL using 0.6 um N-well single poly triple metal CMOS technology illustrate a locking time of 3.5 us, a power dissipation of 92mW at 1GHz operating frequency with 125MHz of input frequency. Measured results show that the phase noise of VCO with V-I converter is -100.3dBc/Hz at a 100kHz offset frequency.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1704-1711
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• 2014

Sandy and dusty weather condition often occurs in the high altitude areas of China, which may greatly influence the corona generated radio interference (RI) characteristics of the bundle conductors of 750 kV AC power transmission lines. Corona generated RI of the conductors of the 750 kV AC power transmission lines used in practice is measured by EMI receiver with a coupling circuit and a coupling capacitor connected between the high voltage side and the earth side in fine and sandy and dusty condition. The measuring frequency is 0.5 MHz, and the quasi-peak detection is used. RI excitation function is calculated based on the corona RI current measured by the EMI receiver. Corona generated RI characteristics were analyzed from sand concentration and sand particle size. The test result shows that the corona generated RI excitation function is influenced by the sandy and dusty condition. Corona discharge of the conductors is more serious in sandy and dusty condition with an ultraviolet (UV) detector. Corona generated RI excitation function increases with the increase of sand concentration and also increases with the increase of particle size.

• Journal of Radiation Industry
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• v.9 no.1
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• pp.1-7
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• 2015

The trend of x-ray image sensor has been evolved from an amorphous silicon sensor to a crystal silicon sensor. A crystal silicon X-ray sensor, meaning a X-ray CIS (CMOS image sensor), is consisted of three transistors (Trs), i.e., a Reset Transistor, a Source Follower and a Select Transistor, and a photodiode. They are highly sensitive to radiation exposure. As the frequency of exposure to radiation increases, the quality of the imaging device dramatically decreases. The most well known effects of a X-ray CIS due to the radiation damage are increments in the reset voltage and dark currents. In this study, a pixel array of a X-ray CIS was made of $20{\times}20pixels$ and this pixel array was exposed to a high radiation dose. The radiation source was Co-60 and the total radiation dose was increased from 1 to 9 kGy with a step of 1 kGy. We irradiated the small pixel array to get the increments data of the reset voltage and the dark currents. Also, we simulated the radiation effects of the pixel by MCNP (Monte Carlo N-Particle) simulation. From the comparison of actual data and simulation data, the most affected location could be determined and the cause of the increments of the reset voltage and dark current could be found.

• Journal of radiological science and technology
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• v.38 no.2
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• pp.121-126
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• 2015

To image diagnosis in neurovascular diseases using Multi-Detector Computed Tomography(MDCT), injected the same contrast material when inspecting Brain Computed Tomography Angiography(BCTA) to examine radiation dose and Image quality on changing Cerebral Artery CT number by tube voltage. Executed an examination with same condition[Beam Collimation $128{\times}0.6mm$, Pitch 0.6, Rotation Time 0.5s, Slice Thickness 5.0mm, Increment 5.0mm, Delay Time 3.0sec, Care Dose 4D(Demension ; D)] except for tube voltage on 50 call patients for BCTA and divided them into two groups (25 people for a group, group A: 80, group B: 120kVp). From all the acquired images, set a ROI(Region of Interest) on four spots such as left cerebral artery, right cerebral artery, posterior cerebral artery and cerebral parenchyma to compare quantitative evaluation, qualitative evaluation and effective dose after measuring CT number value from Picture Archiving Communications System(PACS). Evaluating images with CT number acquired from BCTA examination, images with 80 kVp was 18% higher in Signal to Noise Ratio and 19% in Contrast to Noise Ratio than those with 120 kVp. It was seen that expose dose was decreased by over 50% with tube voltage 80 kVp than with 120 kVp. Group A (25 patients) was examination with tube voltage 80kVp while group B with 120 kVp to examine radiation dose and Image quality. It is considered effective to inspect with lower tube voltage than with conventional high kVp, which can reduce radiation dose without any affect on diagnosis.