• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1408-1416
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• 1995

Microstructure and ferroelectric properties of sol-gel derived PZT(52/48) and PT interlayered PZT(52/48) thin films on Pt/Ti/SiO2/Si substrates were investigated. Films were fabricated using Acetylacetone chelated PT and PZT(52/48) sols. PZT(52/48) thin films annealed at $700^{\circ}C$ for 20 min showed the rosette structure with the size of 1.2~1.6${\mu}{\textrm}{m}$ and the pyrochlore phse was contained. PT interlayered PZT thin films, which is inserted by PbTiO3 thin layer with the thickness of 130 $\AA$ between PZT thin film and electrode, consisted of a single perovskite phase after annealing above 55$0^{\circ}C$. They exhibited the uniform and columnar grains of 0.1~0.16${\mu}{\textrm}{m}$, which are applicable for microelectronic device including non-volatile memory. Typical P-E hysteresis loops could be obtained from PT interlayered PZT thin film at as low as the annealing temperature of 50$0^{\circ}C$. Ferroelectric properties of PT interlayered PZT thin films were improved as increasing annealing temperature up to $700^{\circ}C$, and then deteriorated at 75$0^{\circ}C$. PZT(52/48) and PT interlayered PZT(52/48) thin film annealed at $700^{\circ}C$ for 20 min displayed Ps=38.8$\mu$C/$\textrm{cm}^2$, Pr=10.0$\mu$C/$\textrm{cm}^2$, Ec=65.3 kV/cm and Ps=28.5$\mu$C/$\textrm{cm}^2$, Pr=9.8$\mu$C/$\textrm{cm}^2$, Ec=76.1 kV/cm, respectively.

• Journal of KIISE
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• v.42 no.12
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• pp.1480-1485
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• 2015

As SSDs are increasingly being used as high-performance storage or caches, attention is increasingly paid to the provision of SSDs with Quality-of-Service for I/O request streams of various applications in server systems. Since most SSDs are using the AHCI controller interface on a SATA bus, it is not possible to provide a differentiated service by distinguishing each I/O stream from others within the SSD. However, since a new SSD interface, the NVME controller interface on a PCI Express bus, has been proposed, it is now possible to recognize each I/O stream and schedule I/O requests within the SSD for differentiated services. This paper proposes Flash Operation Group Scheduling within NVME-based flash storage devices, and demonstrates through QEMU-based simulation that we can achieve a proportional bandwidth share for each I/O stream.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.6
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• pp.181-186
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• 2015

With the rapid growth of semiconductor technologies, small-sized devices with powerful computing abilities are becoming a reality. As this environment has a limit on power supply, NVM storage that has a high density and low power consumption is preferred to HDD or SSD. However, legacy software layers optimized for HDDs should be revisited. Specifically, as storage performance approaches DRAM performance, existing I/O mechanisms and software configurations should be reassessed. This paper explores the challenges and implications of using NVM storage with a broad range of experiments. We measure the performance of a system with NVM storage emulated by DRAM with proper timing parameters and compare it with that of HDD storage environments under various configurations. Our experimental results show that even with storage as fast as DRAM, the performance gain is not large for read operations as current I/O mechanisms do a good job hiding the slow performance of HDD. To assess the potential benefit of fast storage media, we change various I/O configurations and perform experiments to quantify the effects of existing I/O mechanisms such as buffer caching, read-ahead, synchronous I/O, direct I/O, block I/O, and byte-addressable I/O on systems with NVM storage.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.788-791
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• 2010

We design 64-bit ROM IP for RFID tag chips using printed CMOS non-volatile memory IP design technology for a printed CMOS process. The proposed 64-bit ROM circuit is using ETRI's $0.8{\mu}m$ CMOS porocess, and is expected to reduce process complexity and cost of RFID tag chips compared to that using a conventional silicon fabrication based on a complex lithography process because the poly layer in a gate terminal is using printing technology of imprint process. And a BL precharge circuit and a BL sense amplifier is not required for the designed cell circuit since it is composed of a transmission gate instead of an NMOS transistor of the conventional ROM circuit. Therefore an output datum is only driven by a DOUT buffer circuit. The Operation current and layout area of the designed ROM of 64 bits with an array of 8 rows and 8 columns using $0.8{\mu}m$ ROM process is $9.86{\mu}A$ and $379.6{\times}418.7{\mu}m^2$.

• Journal of KIISE
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• v.43 no.1
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• pp.27-33
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• 2016

Virtualization has become one of the most helpful techniques in computing systems, and today it is prevalent in several computing environments including desktops, data-centers, and enterprises. However, since I/O layers are implemented to be oblivious to the I/O behaviors on virtual machines (VM), there still exists an I/O scalability issue in virtualized systems. In particular, when a multi-queue solid state drive (SSD) is used as a secondary storage, each system reveals a semantic gap that degrades the overall performance of the VM. This is due to two key problems, accelerated lock contentions and the I/O parallelism issue. In this paper, we propose a novel approach, including the design of virtual CPU (vCPU)-dedicated queues and I/O threads, which efficiently distributes the lock contentions and addresses the parallelism issue of Virtio-blk-data-plane in virtualized environments. Our approach is based on the above principle, which allocates a dedicated queue and an I/O thread for each vCPU to reduce the semantic gap. Our experimental results with various I/O traces clearly show that our design improves the I/O operations per second (IOPS) in virtualized environments by up to 155% over existing QEMU-based systems.

• Journal of the Korea Society of Computer and Information
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• v.26 no.10
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• pp.179-184
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• 2021

In this paper, we propose the deep learning-based neural network model to predict bunker price. In the shipping industry, since fuel oil accounts for the largest portion of ship operation costs and its price is highly volatile, so companies can secure market competitiveness by making fuel oil purchasing decisions based on rational and scientific method. In this paper, short-term predictive analysis of HSFO 380CST in Singapore is conducted by using three recurrent neural network models like RNN, LSTM, and GRU. As a result, first, the forecasting performance of RNN models is better than LSTM and GRUs using long-term memory, and thus the predictive contribution of long-term information is low. Second, since the predictive performance of recurrent neural network models is superior to the previous studies using econometric models, it is confirmed that the recurrent neural network models should consider nonlinear properties of bunker price. The result of this paper will be helpful to improve the decision quality of bunker purchasing.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.16 no.9
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• pp.3068-3086
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• 2022

Digital Forensics is gaining popularity in adjudication of criminal cases as use of electronic gadgets in committing crime has risen. Traditional approach to collecting digital evidence falls short when the disk is encrypted. Encryption keys are often stored in RAM when computer is running. An approach to acquire forensic data from RAM when the computer is shut down is proposed. The approach requires that the investigator immediately cools the RAM and transplant it into a host computer provisioned with a tool developed based on cold boot concept to acquire the RAM image. Observation of data obtained from the acquired image compared to the data loaded into memory shows the RAM chips exhibit some level of remanence which allows their content to persist after shutdown which is contrary to accepted knowledge that RAM loses its content immediately there is power cut. Results from experimental setups conducted with three different RAM chips labeled System A, B and C showed at a reduced temperature of -25C, the content suffered decay of 2.125% in 240 seconds, 0.975% in 120 seconds and 1.225% in 300 seconds respectively. Whereas at operating temperature of 25℃, there was decay of 82.33% in 60 seconds, 80.31% in 60 seconds and 95.27% in 120 seconds respectively. The content of RAM suffered significant decay within two minutes without power supply at operating temperature while at a reduced temperature less than 5% decay was observed. The findings show data can be recovered for forensic evidence even if the culprit shuts down the computer.

• Korea Trade Review
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• v.48 no.2
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• pp.27-43
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• 2023

The maritime industry is playing an increasingly vital part in global economic expansion. Specifically, the Baltic Dry Index is highly correlated with global commodity prices. Hence, the importance of BDI prediction research increases. But, since the global situation has become more volatile, it has become methodologically more difficult to predict the BDI accurately. This paper proposes an integrated machine-learning strategy for accurately forecasting BDI trends. This study combines the benefits of a convolutional neural network (CNN) and long short-term memory neural network (LSTM) for research on prediction. We collected daily BDI data for over 27 years for model fitting. The research findings indicate that CNN successfully extracts BDI data features. On this basis, LSTM predicts BDI accurately. Model R2 attains 94.7 percent. Our research offers a novel, machine-learning-integrated approach to the field of shipping economic indicators research. In addition, this study provides a foundation for risk management decision-making in the fields of shipping institutions and financial investment.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.199-203
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• 2000

$Ta_2_O5$ and $Sr_0.8Bi_2.4Ta_2O_9$ films were deposited on p-type Si(100) substrates by a rf-magnetron sputtering and the metal organic decomposition (MOD), respectively.The electrical characteristics of the $Pt/SBT/Ta_2O_5/Si$ structure were obtained as the functions of $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering and $Ta_2_O5$ thickness. And to certify the role of $Ta_2_O5$ as a buffer layer, the electrical characteristics of $Pt/SBT/Ta_2O_5/Si$ were compared. $Pt/SBT/Ta_2O_5/Si$ capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering did now show typical C-V curve of metal/ferroelectric/insulator/semiconductor (MFIS) structure. The capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering had the largest memory window. And the memory window was decreased as the $Ta_2_O5$ gas flow ratio during the $Ta_2_O5$ sputtering was increased to 40%, 60%. In the C-V characteristics of the $Pt/SBT/Ta_2O_5/Si$ capacitors with the different $Ta_2_O5$ thickness, the capacitor with 26nm thickness of $Ta_2_O5$ had the largest memory window. The C-V and leakage current characteristics of the Pt/SBT/Si structure were worse than those of $Pt/SBT/Ta_2O_5/Si$ structure. These results and Auger electron spectroscopy (AES) measurement showed that $Ta_2_O5$ films as a buffer layer tool a role to prevent from the formation of intermediate phase and interdiffusion between SBT and Si.

• Applied Microscopy
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• v.38 no.4
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• pp.279-284
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• 2008

The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.