• ETRI Journal
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• v.42 no.5
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• pp.748-760
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• 2020

MapReduce is a framework that can process huge datasets in parallel and distributed computing environments. However, a single machine failure during the runtime of MapReduce tasks can increase completion time by 50%. MapReduce handles task failures by restarting the failed task and re-computing all input data from scratch, regardless of how much data had already been processed. To solve this issue, we need the computed key-value pairs to persist in a storage system to avoid re-computing them during the restarting process. In this paper, the task failure resilience (TFR) technique is proposed, which allows the execution of a failed task to continue from the point it was interrupted without having to redo all the work. Amazon ElastiCache for Redis is used as a non-volatile cache for the key-value pairs. We measured the performance of TFR by running different Hadoop benchmarking suites. TFR was implemented using the Hadoop software framework, and the experimental results showed significant performance improvements when compared with the performance of the default Hadoop implementation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.279-285
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• 2000

High quality crystals of $YMnO_3$, which is interested in non-volatile memory device application, were grown by the floating zone method. Optimum condition for powder synthesis was established to be $1200^{\circ}C$ for 10 hrs and optimum condition for sintering of $YMnO_3$feed-rod was established to be $1500^{\circ}C$ for 10hrs respectively. It was found from non-seeded growth experiment that $YMnO_3$crystal was grown preferentially to the [1010] orientation. The $YMnO_3$single crystal, which was grown to the direction of perpendicular to C-axis, was typically 5mm in diameter, 50 mm in length and showed dark-blue color.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.8
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• pp.1369-1375
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• 2016

A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.95-96
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• 2005

나노 구조 제작을 위한 다양한 시도 중 블록 공중합체를 이용한 방법은 현재 활발한 연구가 진행되고 있는 분야이다. 본 연구에서는 비휘발성 메모리 소자의 용량 증가를 위하여 블록 공중합체 박막을 나노 마스크로 이용하고, 평행판헝 반응관 내에서 반응성 이온 에칭을 사용하여 나노 구조의 표면을 제작하였다. 에칭동안에 나노 마스크로서 사용할 블록 공중합체 박막은 PS-b-PMMA를 이용하여 제작하였고, UV를 주사하여 PMMA를 제거하고 수직적인 나노 흩을 구성하여 나노 패터닝이 가능하도록 하였다. 실험을 통하여 매우 균일한 나노 바늘 형태의 구조를 생성할 수 있으며, 반응기체와 유량의 조절을 통하여 다양한 표면 구조를 확인할 수 있었다. 블록 공중합체는 나노 마스크로서 뛰어난 기능을 나타내며, 이를 이용하여 나노 사이즈의 패터닝이 가능하고, 표면적 증가를 통하여 비휘발성 메모리 소자의 용량 증가에 기여할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.4
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• pp.63-69
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• 2012

This paper describes novel scheme of a gray scale capacitive fingerprint image for high-accuracy capacitive sensor chip. The typical gray scale image scheme used a DAC of big size layout or charge-pump circuit of non-volatile memory with high power consumption and complexity by a global clock signal. A modified capacitive detection circuit of charge sharing scheme is proposed, which uses DLC(down literal circuit) based on a neuron MOS(vMOS) and analog simple multiplexor. The detection circuit is designed and simulated in 3.3V, $0.35{\mu}m$ standard CMOS process. Because the proposed circuit does not need a comparator and peripheral circuits, a pixel layout size can be reduced and the image resolution can be improved.

• The Korean Journal of Archival Studies
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• no.10
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• pp.27-62
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• 2004

As the penetration of information technology into everyday life is accelerated day by day, virtually all kinds of human representation of knowledge and arts are produced and distributed in the digital form. It is problematic, however, because digital objects are so volatile that it is not easy to keep them in fixed form. The fatal fragility makes it extremely tricky to preserve the digital heritage of our time for the next generation. The present paper aims to introduce current endeavors made at the international and the national levels and to provide with suggestions for Korean national strategy of digital preservation. It starts with reviewing the global trends of digital archiving and long-term preservation, focusing on standardization, preservation strategies and current experiments and projects being conducted for preserving various digital objects. It then sketches national strategies of several leading countries. Based on the sketch, twofold suggestions for Korean national strategy are proposed: establishing a central coordinating agency and accommodating the digital preservation issue in the legislative and regulatory framework for the information society. The paper concludes with the necessity of cooperation among heritage organizations, including libraries, archives, museums. They should cooperate with each other because they have traditionally been trusted with the custodianship of collective memory of humankind and the digital heritage cannot be passed onto the next generation without their endeavor. They should also work together because any single institution, or any single nation could cover what it takes to complete the task of long-term preservation of our digital heritage.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1712-1715
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• 2018

To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of $(Hf,\;Zr)O_2$ thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the $(Hf,\;Zr)O_2$ thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.25-29
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• 2020

This study demonstrates direct-patternable amorphous TiO_x resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiO_x film was confirmed by atomic force microscopy. Amorphous TiO_x RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.